F206NIA200SA-M105F
preliminary datasheet
flowNPC 2
Features
●
Neutral-point-Clamped inverter
●
High power flow2 housing
●
Low Inductance Layout
600V/200A
flow2 housing
Target Applications
●
UPS
●
Solar inverters
Schematic
Types
●
F206NIA200SA
Maximum Ratings
Tj=25°C, unless otherwise specified
Parameter
Symbol
Condition
Value
Unit
Buck IGBT
Collector-emitter break down voltage
DC collector current
Repetitive peak collector current
Power dissipation per IGBT
Gate-emitter peak voltage
Short circuit ratings
Maximum Junction Temperature
V
CE
I
C
I
Cpulse
P
tot
V
GE
t
SC
V
CC
T
j
max
T
j
≤150°C
V
GE
=15V
T
j
=T
j
max
t
p
limited by T
j
max
T
j
=T
j
max
T
h
=80°C
T
c
=80°C
T
h
=80°C
T
c
=80°C
600
155
200
600
245
372
±20
6
360
175
V
A
A
W
V
μs
V
°C
Buck Diode
Peak Repetitive Reverse Voltage
DC forward current
Repetitive peak forward current
Power dissipation per Diode
Maximum Junction Temperature
V
RRM
I
F
I
FRM
P
tot
T
j
max
T
j
=25°C
T
j
=T
j
max
t
p
limited by T
j
max
T
j
=T
j
max
T
h
=80°C
T
c
=80°C
T
c
=100°C
T
h
=80°C
T
c
=80°C
600
109
144
600
158
239
175
V
A
A
W
°C
Copyright by Vincotech
1
Revision: 4
F206NIA200SA-M105F
preliminary datasheet
Maximum Ratings
Tj=25°C, unless otherwise specified
Parameter
Symbol
Condition
Value
Unit
Boost IGBT
Collector-emitter break down voltage
DC collector current
Repetitive peak collector current
Power dissipation per IGBT
Gate-emitter peak voltage
Short circuit ratings
Maximum Junction Temperature
V
CE
I
C
I
Cpuls
P
tot
V
GE
t
SC
V
CC
T
j
max
T
j
≤150°C
V
GE
=15V
T
j
=T
j
max
t
p
limited by T
j
max
T
j
=T
j
max
T
h
=80°C
T
c
=80°C
T
h
=80°C
T
c
=80°C
600
154
200
600
245
372
±20
6
360
175
V
A
A
W
V
μs
V
°C
Boost Inverse Diode
Peak Repetitive Reverse Voltage
DC forward current
Repetitive peak forward current
Power dissipation per Diode
Maximum Junction Temperature
V
RRM
I
F
I
FRM
P
tot
T
j
max
T
c
=25°C
T
j
=T
j
max
t
p
limited by T
j
max
T
j
=T
j
max
T
h
=80°C
T
c
=80°C
T
h
=80°C
T
c
=80°C
600
136
145
600
190
190
175
V
A
A
W
°C
Boost Diode
Peak Repetitive Reverse Voltage
DC forward current
Repetitive peak forward current
Power dissipation per Diode
Maximum Junction Temperature
V
RRM
I
F
I
FRM
P
tot
T
j
max
T
j
=25°C
T
h
=80°C
T
c
=80°C
600
138
183
600
T
h
=80°C
T
c
=80°C
190
287
175
V
A
A
W
°C
T
j
=T
j
max
t
p
limited by T
j
max
T
j
=T
j
max
Thermal Properties
Storage temperature
Operation temperature under switching condition
T
stg
T
op
-40…+125
-40…+(Tjmax - 25)
°C
°C
Insulation Properties
Insulation voltage
Creepage distance
Clearance
V
is
t=2s
DC voltage
4000
min 12,7
min 12,7
V
mm
mm
Copyright by Vincotech
2
Revision: 4
F206NIA200SA-M105F
preliminary datasheet
Characteristic Values
Parameter
Symbol
V
GE
[V] or
V
GS
[V]
Conditions
V
r
[V] or
V
CE
[V] or
V
DS
[V]
I
C
[A] or
I
F
[A] or
I
D
[A]
T
j
Min
Value
Typ
Max
Unit
Buck IGBT
Gate emitter threshold voltage
Collector-emitter saturation voltage
Collector-emitter cut-off current incl. Diode
Gate-emitter leakage current
Integrated Gate resistor
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy loss per pulse
Turn-off energy loss per pulse
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate charge
Thermal resistance chip to heatsink per chip
Thermal resistance chip to case per chip
V
GE(th)
V
CE(sat)
I
CES
I
GES
R
gint
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
C
ies
C
oss
C
rss
Q
Gate
R
thJH
R
thJC
Thermal grease
thickness≤50um
λ
= 1 W/mK
15
700
200
Tj=25°C
f=1MHz
0
25
Tj=25°C
Rgoff=4
Ω
Rgon=4
Ω
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
VCE=VGE
15
0
20
600
0
0,0032
200
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
5
1,05
5,8
1,51
1,75
6,5
1,85
0,66
700
1
240
245
42
42
310
341
71
104
3,14
4,22
6,14
7,89
12320
768
366
2100
0,39
K/W
0,26
nC
pF
V
V
mA
nA
Ω
ns
±15
350
200
mWs
Buck Diode
Diode forward voltage
Peak reverse recovery current
Reverse recovery time
Reverse recovered charge
Peak rate of fall of recovery current
Reverse recovered energy
Thermal resistance chip to heatsink per chip
Thermal resistance chip to case per chip
V
F
I
RRM
t
rr
Q
rr
di(rec)max
/dt
Erec
R
thJH
R
thJC
Thermal grease
thickness≤50um
λ
= 1 W/mK
Rgoff=4
Ω
±15
350
200
200
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
1,5
1,77
1,89
136
172
137
269
8,5
16,2
3158
2901
2,02
3,66
0,60
K/W
0,40
3,3
V
A
ns
μC
A/μs
mWs
Copyright by Vincotech
3
Revision: 4
F206NIA200SA-M105F
preliminary datasheet
Characteristic Values
Parameter
Symbol
V
GE
[V] or
V
GS
[V]
Conditions
V
r
[V] or
V
CE
[V] or
V
DS
[V]
I
C
[A] or
I
F
[A] or
I
D
[A]
T
j
Min
Value
Typ
Max
Unit
Boost IGBT
Gate emitter threshold voltage
Collector-emitter saturation voltage
Collector-emitter cut-off incl diode
Gate-emitter leakage current
Integrated Gate resistor
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy loss per pulse
Turn-off energy loss per pulse
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate charge
Thermal resistance chip to heatsink per chip
Thermal resistance chip to case per chip
V
GE(th)
V
CE(sat)
I
CES
I
GES
R
gint
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
C
ies
C
oss
C
rss
Q
Gate
R
thJH
R
thJC
Thermal grease
thickness≤50um
λ
= 1 W/mK
15
700
200
Tj=25°C
f=1MHz
0
25
Tj=25°C
Rgoff=4
Ω
Rgon=4
Ω
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
V
CE
=V
GE
15
0
20
600
0
0,0032
200
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
5
1,05
5,8
1,51
1,75
6,5
1,85
0,66
700
1
233
239
43
45
309
335
65
88
3,95
4,87
5,88
7,64
12320
768
366
2100
0,39
K/W
0,26
nC
pF
V
V
mA
nA
Ω
ns
±15
350
200
mWs
Boost Inverse Diode
Diode forward voltage
Thermal resistance chip to heatsink per chip
Thermal resistance chip to case per chip
V
F
R
thJH
R
thJC
Thermal grease
thickness≤50um
λ
= 1 W/mK
200
Tj=25°C
Tj=125°C
1,5
1,60
1,64
0,50
K/W
0,33
3,3
V
Boost Diode
Diode forward voltage
Reverse leakage current
Peak reverse recovery current
Reverse recovery time
Reverse recovered charge
Peak rate of fall of recovery current
Reverse recovery energy
Thermal resistance chip to heatsink per chip
Thermal resistance chip to case per chip
V
F
I
r
I
RRM
t
rr
Q
rr
di(rec)max
/dt
E
rec
R
thJH
R
thJC
Thermal grease
thickness≤50um
λ
= 1 W/mK
Rgoff=4
Ω
±15
350
200
600
200
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
1,5
1,60
1,65
3,3
600
132
163
138
211
9,1
16,5
2672
1616
2,17
4,15
0,50
K/W
0,33
V
μA
A
ns
μC
A/μs
mWs
Thermistor
Rated resistance
Deviation of R100
Power dissipation
Power dissipation constant
B-value
B-value
Vincotech NTC Reference
B(25/50) Tol. ±3%
B(25/100) Tol. ±3%
R
ΔR/R
P
R100=1486
Ω
T=25°C
T=100°C
T=25°C
T=25°C
T=25°C
T=25°C
-5
200
2
3950
3996
B
22000
5
Ω
%
mW
mW/K
K
K
Copyright by Vincotech
4
Revision: 4
F206NIA200SA-M105F
preliminary datasheet
Buck
Figure 1
Typical output characteristics
I
C
= f(V
CE
)
600
I
C
(A)
IGBT
Figure 2
Typical output characteristics
I
C
= f(V
CE
)
600
I
C
(A)
IGBT
500
500
400
400
300
300
200
200
100
100
0
0
1
2
3
4
V
CE
(V)
5
0
0
1
2
3
4
V
CE
(V)
5
At
t
p
=
T
j
=
V
GE
from
350
μs
25
°C
7 V to 17 V in steps of 1 V
At
t
p
=
T
j
=
V
GE
from
350
μs
25
°C
7 V to 17 V in steps of 1 V
Figure 3
Typical transfer characteristics
I
C
= f(V
GE
)
200
I
C
(A)
IGBT
Figure 4
Typical diode forward current as
a function of forward voltage
I
F
= f(V
F
)
400
I
F
(A)
FRED
T
j
= 25°C
350
T
j
= 25°C
160
300
120
250
T
j
= T
jmax
-25°C
200
80
150
100
40
T
j
= T
jmax
-25°C
50
0
0
2
4
6
8
10
V
GE
(V)
12
0
0
0,5
1
1,5
2
2,5
V
F
(V)
3
At
t
p
=
V
CE
=
350
10
μs
V
At
t
p
=
350
μs
Copyright by Vincotech
5
Revision: 4
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