AP02N90JB
Halogen-Free Product
Advanced Power
Electronics Corp.
▼
100% Avalanche Test
▼
Fast Switching Characteristic
▼
Simple Drive Requirement
▼
RoHS Compliant & Halogen-Free
G
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
D
BV
DSS
R
DS(ON)
I
D
900V
7.2Ω
1.9A
Description
S
AP02N90 series are from Advanced Power innovated design and
silicon process technology to achieve the lowest possible on-
resistance and fast switching performance. It provides the designer
with an extreme efficient device for use in a wide range of power
applications.
The TO-251S short lead package is preferred for all commercial-
industrial through-hole applications without lead-cutted.
G
D
S
TO-251S
Absolute Maximum Ratings@T
j
=25
o
C(unless otherwise specified)
Symbol
V
DS
V
GS
I
D
@T
C
=25℃
I
D
@T
C
=100℃
I
DM
P
D
@T
C
=25℃
P
D
@T
A
=25℃
E
AS
I
AR
T
STG
T
J
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current, V
GS
@ 10V
Drain Current, V
GS
@ 10V
Pulsed Drain Current
1
Total Power Dissipation
Total Power Dissipation
Single Pulse Avalanche Energy
2
Avalanche Current
Storage Temperature Range
Operating Junction Temperature Range
.
Rating
900
+30
1.9
1.2
6
62.5
1.13
18
1.9
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
W
mJ
A
℃
℃
Thermal Data
Symbol
Rthj-c
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient
Value
2
110
Units
℃/W
℃/W
1
201505271
Data & specifications subject to change without notice
AP02N90JB
Electrical Characteristics@T
j
=25
o
C(unless otherwise specified)
Symbol
BV
DSS
R
DS(ON)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Parameter
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current
Gate-Source Leakage
Total Gate Charge
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Test Conditions
V
GS
=0V, I
D
=250uA
V
GS
=10V, I
D
=0.85A
V
DS
=V
GS
, I
D
=250uA
V
DS
=10V, I
D
=1.9A
V
DS
=720V, V
GS
=0V
V
GS
=+30V, V
DS
=0V
I
D
=1.9A
V
DS
=540V
V
GS
=10V
V
DD
=450V
I
D
=1.9A
R
G
=10Ω
V
GS
=10V
V
GS
=0V
V
DS
=25V
f=1.0MHz
Min.
900
-
2
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
-
-
2
-
-
12
2.5
4.7
10
5
18
9
630
40
4
Max. Units
-
7.2
4
-
100
+100
20
-
-
-
-
-
-
1000
-
-
V
Ω
V
S
uA
nA
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
Source-Drain Diode
Symbol
V
SD
t
rr
Q
rr
Notes:
1.Pulse width limited by Max. junction temperature.
Parameter
Forward On Voltage
3
Reverse Recovery Time
Reverse Recovery Charge
.
Test Conditions
I
S
=1.9A, V
GS
=0V
I
S
=1.9A, V
GS
=0V,
dI/dt=100A/µs
Min.
-
-
-
Typ.
-
360
1.8
Max. Units
1.3
-
-
V
ns
µC
o
2.Starting T
j
=25 C , V
DD
=50V , L=10mH , R
G
=25Ω , I
AS
=1.9A.
3.Pulse test
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP02N90JB
2.0
1.25
T
C
=25 C
1.6
o
I
D
, Drain Current (A)
1.2
I
D
, Drain Current (A)
10V
8.0V
6.0V
5.0V
T
C
=150 C
1.00
o
10V
8.0V
6.0V
5.0V
V
G
=4.5V
0.75
0.8
0.50
V
G
=4.5V
0.4
0.25
0.0
0.00
0
3
6
9
12
15
18
0
3
6
9
12
15
18
V
DS
, Drain-to-Source Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1.2
2.8
2.4
I
D
= 0.85 A
V
G
=10V
1.1
Normalized R
DS(ON)
2.0
Normalized BV
DSS
1.6
1.0
.
1.2
0.8
0.9
0.4
0.8
-50
0
50
100
150
0.0
-50
0
50
100
150
Junction Temperature ( C)
o
T
j
, Junction Temperature ( C )
o
Fig 3. Normalized BV
DSS
v.s. Junction
Temperature
2.0
1.6
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
1.5
1.2
T
j
=150 C
I
S
(A)
1.0
T
j
=25 C
Normalized V
GS(th)
o
o
0.8
0.5
0.0
0
0.2
0.4
0.6
0.8
1
1.2
0.4
-50
0
50
100
150
V
SD
, Source-to-Drain Voltage (V)
T
j
,Junction Temperature ( C)
o
Fig 5. Forward Characteristic of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP02N90JB
f=1.0MHz
12
1000
I
D
= 1.9 A
10
C
iss
V
DS
= 180 V
V
DS
= 360 V
V
DS
= 540 V
C (pF)
V
GS
, Gate to Source Voltage (V)
8
100
6
C
oss
4
10
C
rss
2
0
0
4
8
12
16
1
1
5
9
13
17
21
25
29
Q
G
, Total Gate Charge (nC)
V
DS
, Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
10.00
1
Operation in this
area limited by
R
DS(ON)
Normalized Thermal Response (R
thjc
)
DUTY=0.5
100us
1.00
0.2
I
D
(A)
1ms
10ms
100ms
DC
T
C
=25 C
Single Pulse
0.01
1
10
100
1000
10000
0.1
.
0.1
0.05
P
DM
0.10
t
0.02
T
Duty factor = t/T
Peak T
j
= P
DM
x R
thjc
+ T
C
0.01
o
SINGLE PULSE
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
V
DS
, Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
V
DS
90%
V
G
Q
G
10V
Q
GS
Q
GD
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
Charge
Q
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
4
AP02N90JB
MARKING INFORMATION
Part Number
02N90J
Package Code
YWWSSS
Date Code (YWWSSS)
Y：Last Digit Of The Year
WW：Week
SSS：Sequence
.
5
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