AP09N20BGH-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
▼
Simple Drive Requirement
▼
Lower Gate Charge
▼
Fast Switching Characteristics
▼
RoHS Compliant & Halogen-Free
G
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
D
BV
DSS
R
DS(ON)
I
D
200V
460mΩ
7.8A
S
Description
AP09N20B series are from Advanced Power innovated design and
silicon process technology to achieve the lowest possible on-resistance
and fast switching performance. It provides the designer with an
extreme efficient device for use in a wide range of power applications.
The TO-252 package is widely preferred for all commercial-industrial
surface mount applications using infrared reflow technique and suited
for high current application due to the low connection resistance.
G
D
S
TO-252(H)
Absolute Maximum Ratings@T
j
=25
o
C(unless otherwise specified)
Symbol
V
DS
V
GS
I
D
@T
C
=25℃
I
D
@T
C
=100℃
I
DM
P
D
@T
C
=25℃
P
D
@T
A
=25℃
T
STG
T
J
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current, V
GS
@ 10V
Drain Current, V
GS
@ 10V
Pulsed Drain Current
1
Rating
200
+20
7.8
5
20
69
2
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
W
℃
℃
Total Power Dissipation
Total Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
Thermal Data
Symbol
Rthj-c
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient (PCB mount)
3
Value
1.8
62.5
Unit
℃/W
℃/W
1
201501122
Data & specifications subject to change without notice
AP09N20BGH-HF
Electrical Characteristics@T
j
=25 C(unless otherwise specified)
Symbol
BV
DSS
R
DS(ON)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Parameter
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance
2
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current
Gate-Source Leakage
Total Gate Charge
2
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
2
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Test Conditions
V
GS
=0V, I
D
=250uA
V
GS
=10V, I
D
=5A
V
GS
=4.5V, I
D
=3A
V
DS
=V
GS
, I
D
=250uA
V
DS
=10V, I
D
=5A
V
DS
=160V, V
GS
=0V
V
GS
= +20V, V
DS
=0V
I
D
=5A
V
DS
=160V
V
GS
=4.5V
V
DD
=100V
I
D
=5A
R
G
=3.3Ω
V
GS
=10V
V
GS
=0V
V
DS
=25V
f=1.0MHz
Min.
200
-
-
1
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
-
-
-
9
-
-
21
2
14
6
9
39
10
630
90
45
Max. Units
-
460
500
3
-
25
+100
33.6
-
-
-
-
-
-
1000
-
-
V
mΩ
mΩ
V
S
uA
nA
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
o
Source-Drain Diode
Symbol
V
SD
t
rr
Q
rr
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Surface mounted on 1 in
2
copper pad of FR4 board
Parameter
Forward On Voltage
2
Reverse Recovery Time
2
Test Conditions
I
S
=5A, V
GS
=0V
I
S
=5A, V
GS
=0V,
dI/dt=100A/µs
Min.
-
-
-
Typ.
-
190
1.7
Max. Units
1.3
-
-
V
ns
uC
Reverse Recovery Charge
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP09N20BGH-HF
20
16
T
C
= 25
o
C
16
I
D
, Drain Current (A)
I
D
, Drain Current (A)
10V
7.0V
6.0V
5.0V
V
G
=4.5V
T
C
=150 C
12
o
10V
7.0V
6.0V
5.0V
V
GS
=4.5V
12
8
8
4
4
0
0
8
16
24
32
0
0
8
16
24
32
V
DS
, Drain-to-Source Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1.6
2.8
2.4
1.4
I
D
=5A
V
GS
=10V
Normalized BV
DSS
Normalized R
DS(ON)
-50
0
50
100
150
2
1.2
1.6
1.2
1
0.8
0.8
0.4
0.6
0
-50
0
50
100
150
T
j
, Junction Temperature ( C)
o
T
j
, Junction Temperature ( C )
o
Fig 3. Normalized BV
DSS
v.s. Junction
Temperature
8
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
1.4
1.2
6
Normalized V
GS(th)
I
S
(A)
1
4
T
j
=150
o
C
2
T
j
=25
o
C
0.8
0.6
0
0.4
0
0.2
0.4
0.6
0.8
1
1.2
1.4
-50
0
50
100
150
V
SD
, Source-to-Drain Voltage (V)
T
j
, Junction Temperature ( C )
o
Fig 5. Forward Characteristic of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP09N20BGH-HF
10
1000
f=1.0MHz
I
D
=5A
V
DS
=160V
V
GS
, Gate to Source Voltage (V)
8
800
4
C (pF)
6
600
C
iss
400
2
200
C
oss
C
rss
0
0
10
20
30
40
50
0
1
5
9
13
17
21
25
29
Q
G
, Total Gate Charge (nC)
V
DS
, Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
100
1
Duty factor=0.5
Normalized Thermal Response (R
thjc
)
0.2
10
Operation in this area
limited by R
DS(ON)
1ms
0.1
0.1
0.05
I
D
(A)
0.02
0.01
10ms
1
P
DM
0.01
Single Pulse
100ms
DC
t
T
Duty factor = t/T
Peak T
j
= P
DM
x R
thjc
+ T
C
T
c
=25 C
Single Pulse
0
0.1
1
10
100
1000
o
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
V
DS
, Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig10. Effective Transient Thermal Impedance
V
DS
90%
V
G
Q
G
4.5V
Q
GS
Q
GD
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
Charge
Q
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
4
AP09N20BGH-HF
MARKING INFORMATION
Part Number
meet Rohs requirement
for low voltage MOSFET only
Package Code
09N20BGH
YWWSSS
Date Code (YWWSSS)
Y：Last Digit Of The Year
WW：Week
SSS：Sequence
5
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