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BU920T

Description
HIGH VOLTAGE POWER DISSIPATION
CategoryDiscrete semiconductor    The transistor   
File Size274KB,5 Pages
ManufacturerSTMicroelectronics
Websitehttp://www.st.com/
Download Datasheet Parametric View All

BU920T Overview

HIGH VOLTAGE POWER DISSIPATION

BU920T Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerSTMicroelectronics
Parts packaging codeTO-3-3L
package instructionTO-220, 3 PIN
Contacts3
Reach Compliance Code_compli
Shell connectionCOLLECTOR
Maximum collector current (IC)10 A
Collector-emitter maximum voltage350 V
ConfigurationDARLINGTON WITH BUILT-IN DIODE AND RESISTOR
JEDEC-95 codeTO-3
JESD-30 codeO-MBFM-P2
JESD-609 codee0
Number of components1
Number of terminals2
Maximum operating temperature175 °C
Package body materialMETAL
Package shapeROUND
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeNPN
Maximum power consumption environment120 W
Certification statusNot Qualified
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formPIN/PEG
Terminal locationBOTTOM
Maximum time at peak reflow temperatureNOT SPECIFIED
Transistor component materialsSILICON
VCEsat-Max1.8 V
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