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BU921ZP

Description
NPN POWER DARLINGTON
CategoryDiscrete semiconductor    The transistor   
File Size100KB,2 Pages
ManufacturerSTMicroelectronics
Websitehttp://www.st.com/
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BU921ZP Overview

NPN POWER DARLINGTON

BU921ZP Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerSTMicroelectronics
Reach Compliance Code_compli
Maximum collector current (IC)16 A
Collector-emitter maximum voltage350 V
ConfigurationDARLINGTON WITH BUILT-IN DIODE AND RESISTOR
Minimum DC current gain (hFE)300
JEDEC-95 codeTO-218
JESD-30 codeR-PSFM-T3
JESD-609 codee0
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeNPN
Maximum power consumption environment125 W
Maximum power dissipation(Abs)125 W
Certification statusNot Qualified
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
Transistor component materialsSILICON
VCEsat-Max1.6 V

BU921ZP Related Products

BU921ZP BU921ZPFI BU921ZTFI BU921ZT
Description NPN POWER DARLINGTON NPN POWER DARLINGTON NPN POWER DARLINGTON NPN POWER DARLINGTON
Is it Rohs certified? incompatible incompatible incompatible incompatible
Reach Compliance Code _compli not_compliant _compli _compli
Maximum collector current (IC) 16 A 16 A 16 A 16 A
Collector-emitter maximum voltage 350 V 350 V 350 V 350 V
Configuration DARLINGTON WITH BUILT-IN DIODE AND RESISTOR DARLINGTON WITH BUILT-IN DIODE AND RESISTOR DARLINGTON WITH BUILT-IN DIODE AND RESISTOR DARLINGTON WITH BUILT-IN DIODE AND RESISTOR
Minimum DC current gain (hFE) 300 300 300 300
JEDEC-95 code TO-218 TO-218 TO-220AB TO-220AB
JESD-30 code R-PSFM-T3 R-PSFM-T3 R-PSFM-T3 R-PSFM-T3
JESD-609 code e0 e0 e0 e0
Number of components 1 1 1 1
Number of terminals 3 3 3 3
Maximum operating temperature 150 °C 150 °C 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
Polarity/channel type NPN NPN NPN NPN
Maximum power consumption environment 125 W 60 W 40 W 100 W
Maximum power dissipation(Abs) 125 W 60 W 40 W 100 W
Certification status Not Qualified Not Qualified Not Qualified Not Qualified
surface mount NO NO NO NO
Terminal surface Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
Terminal form THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE
Terminal location SINGLE SINGLE SINGLE SINGLE
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
Transistor component materials SILICON SILICON SILICON SILICON
VCEsat-Max 1.6 V 1.6 V 1.6 V 1.6 V
Maker STMicroelectronics STMicroelectronics - STMicroelectronics
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