INJ0203AC1
High Speed Switching
Silicon P-channel MOSFET
DESCRIPTION
INJ0203AC1 is a Silicon P-channel MOSFET.
This product is most suitable for use such as portable
machinery, because of low voltage drive and low on resistance.
0.65
2.8
1.5
0.65
OUTLINE DRAWING
Unit：½½
FEATURE
2.8
1.90
0.95 0.95
consider a drive electric current.
・Drive voltage -2.5V
・Low on Resistance. R
DS(on)
=100mΩ(TYP).
・High speed switching.
・Small package for easy mounting.
①
②
③
APPLICATION
Switching
MAXIMUM RATINGS（Ta=25℃）
Symbol
V
DSS
V
GSS
I
D
I
DP
P
D
T
ch
T
stg
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current(DC)
Drain current(Pulse) ※1
Total Power Dissipation
Channel Temperature
Storage Temperature
Rating
-20
-10
-2
-4
200
+150
-55½+150
Unit
V
V
A
A
mW
℃
℃
JEITA：SC-59
JEDEC：Similar to TO-236
TERMINAL CONNECTER
①：GATE
②：SOURCE
③：DRAIN
EQUIVALENT CIRCUIT
D
0½0.1
MARKING
※1：Pw≦10μs, Duty cycle≦1%
G
S
ELECTRICAL CHARACTERISTICS（Ta=25℃）
Parameter
Drain-Source Breakdown Voltage
Gate-Source Leak current
Zero Gate Voltage Drain Current
Gate Threshold Voltage
Forward Transfer Admittance
Static Drain-Source On-State Resistance
Input Capacitance
Output Capacitance
Switching Time
Symbol
V
(BR)DSS
I
GSS
I
DSS
V
th
| Y
fs
|
R
DS(ON)
C
iss
C
oss
t
on
t
off
Test Condition
I
D
=-100μA, V
GS
=0V
V
GS
=±10V, I
DS
=0A
V
DS
=-20V ,V
GS
=0V
I
D
=-250μA, V
DS
=V
V
DS
=-10V, I
D
=-1A
I
D
=-1A, V
GS
=-4.5V
V
DS
=-10V, V
GS
=0V, f=1MHz
V
DD
=-15V, I
D
=-1A
V
GS
=0½-10V
GS
MIN
-20
-
-
-0.4
-
-
-
-
-
-
Limit
TYP
-
-
-
-
3.0
100
340
90
30
130
0.13
1.1
0.8
J・８
Unit
V
μA
μA
V
S
mΩ
pF
pF
ns
ns
0.4
・Input impedance is high, and not necessary to
MAX
-
±10
-10
-1.2
-
-
-
-
-
-
ISAHAYA ELECTRONICS CORPORATION
INJ0203AC1
High Speed Switching
Silicon P-channel MOSFET
TYPICAL CHARACTERISTICS
ID-VGS
-10
VDS=-10V
Reverse Drain current IDR(A)
-10
VGS=0V
IDR-VDS
Drain current ID(A)
-1
-1
-0.1
Ta=100℃
75℃
25℃
-25℃
-0.1
Ta=100℃
75℃
25℃
-25℃
-0.01
-0.01
-0.001
0
-0.5
-1
-1.5
-2
-2.5
-3
Gate-Source voltage VGS(V)
|Yfs|-ID
10
Forward transfer admittance |Yfs|(S)
VDS=-10V
-0.001
0
0.5
1
1.5
2
Drain-Source voltage VDS(V)
RDS(on)-ID
1
VGS=-4.5V
Drain-Source ON Resistance
RDS(on)(Ω)
1
Ta=100℃
75℃
25℃
-25℃
0.1
Ta=100℃
75℃
25℃
-25℃
0
-0.5
-1
-1.5
-2
Drain current ID(A)
Vth-Ta
-2.5
-3
0.1
0
-0.5
-1
-1.5
-2
Drain current ID(A)
RDS(on)-VGS
10
ID=-1A
Gate threshold voltage Vth(V)
-2.5
-3
0.01
-1.5
ID=250uA
VDS=VGS
Drain-Source ON Resistance
RDS(on)(Ω)
1
Ta=100℃
75℃
25℃
-25℃
-1
0.1
-0.5
0.01
0
-2
-4
-6
-8
-10
Gate-Source voltage VGS(V)
0
-50
-25
0
25
50
75
100
125
Ambinet temperature Ta(℃)
ISAHAYA ELECTRONICS CORPORATION
6-41 Tsukuba, Isahaya, Nagasaki, 854-0065 Japan
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·
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mishap.
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Mar.2013
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