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30KPA216CE3

Description
Trans Voltage Suppressor Diode, 30000W, 216V V(RWM), Bidirectional, 1 Element, Silicon,
CategoryDiscrete semiconductor    diode   
File Size509KB,9 Pages
ManufacturerMicrosemi
Websitehttps://www.microsemi.com
Environmental Compliance  
Download Datasheet Parametric View All

30KPA216CE3 Overview

Trans Voltage Suppressor Diode, 30000W, 216V V(RWM), Bidirectional, 1 Element, Silicon,

30KPA216CE3 Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
Objectid1343212568
package instructionO-PALF-W2
Reach Compliance Codecompliant
ECCN codeEAR99
Maximum breakdown voltage265.4 V
Minimum breakdown voltage241.3 V
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeTRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 codeO-PALF-W2
JESD-609 codee3
Humidity sensitivity level1
Maximum non-repetitive peak reverse power dissipation30000 W
Number of components1
Number of terminals2
Maximum operating temperature175 °C
Minimum operating temperature-55 °C
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formLONG FORM
Peak Reflow Temperature (Celsius)NOT SPECIFIED
polarityBIDIRECTIONAL
Maximum power dissipation8 W
GuidelineIEC-61000-4-2, 4-4, 4-5
Maximum repetitive peak reverse voltage216 V
surface mountNO
technologyAVALANCHE
Terminal surfaceMatte Tin (Sn)
Terminal formWIRE
Terminal locationAXIAL
Maximum time at peak reflow temperatureNOT SPECIFIED
30KPA28e3 – 30KPA288CAe3
Compliant
30,000 Watt Transient Voltage Suppressor
(TVS) Protection Device
DESCRIPTION
This device clamps dangerous high-voltage short-term transients such as those produced by
the secondary effects of lightning strikes, providing circuit protection to several class levels in
the IEC61000-4-5 specification. Clamping time is virtually instantaneous. It also provides
protection from transients caused by inductive load dumps, induced RFI, and ESD, providing
protection to IEC61000-4-2 and -4-4.
Important:
For the latest information, visit our website
http://www.microsemi.com.
FEATURES
Available in both unidirectional and bidirectional configurations.
5% and 10% working voltage tolerance available
Moisture classification is Level 1 with no dry pack required per IPC/JEDEC J-STD-020B.
RoHS compliant (2002/95/EC), MSL level 1 (J-STD-020).
P600 Package
APPLICATIONS / BENEFITS
Protection from transients caused by lightning strikes, switching transients, RFI, and ESD.
Protection from the secondary effects of lightning per IEC61000-4-5.
Protection from ESD, and EFT per IEC 61000-4-2 and IEC 61000-4-4.
MAXIMUM RATINGS
@ 25 ºC unless otherwise noted
Parameters/Test Conditions
Junction and Storage Temperature
Thermal Resistance, Junction to Lead @ 3/8 inch (10 mm)
lead length from body
Thermal Resistance, Junction to Ambient
Non Repetitive Peak Forward Surge Current
(1)
(8.3ms single half sine wave)
Rated Average Power Dissipation @ T
L
= 75 ºC,
(2)
(0.375 inch (9.5 mm) from body)
Peak Pulse Power Dissipation with a 10/1000μs waveform
(see
Figure 1)
(3)
Peak Pulse Current with a 10/1000μs waveform
Symbol
T
J
and
T
STG
R
ӨJL
R
ӨJA
I
FSM
P
M(AV)
P
PP
I
PP
Value
-55 to +175
8.0
77.5
400
8.0
30000
See
Electrical
Table
260
o
Unit
o
C
C/W
C/W
A
W
W
A
o
MSC – Lawrence
6 Lake Street,
Lawrence, MA 01841
1-800-446-1158 or
(978) 620-2600
Fax: (978) 689-0803
MSC – Ireland
Gort Road Business Park,
Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044
Fax: +353 (0) 65 6822298
Website:
www.microsemi.com
Solder Temperature @ 10 s
o
C
Notes:
1. Measured on 8.3ms single half sine-wave or equivalent square wave, duty cycle = 4 pulses per minute
maximum.
2. Mounted as shown in
Figure 5.
3. Non-repetitive current pulse, per
Figure 3
and derated above T
A
= 25 ºC per
Figure 2.
RF01132, Rev. A (5/28/13)
©2013 Microsemi Corporation
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