JIEJIE MICROELECTRONICS CO. , Ltd
ACJT1 Series
DESCRIPTION:
ACJT1 series triacs with high ability to withstand the
shock loading of large current provide high dv/dt rate
with strong resistance to electromagnetic interference.
They are especially recommended for use on inductive
load and serious electromagnetic interference place.
1
1
1A TRIACs
Rev.3.0
2
3
2
SOT-89
3
SOT-223
MAIN FEATURES
Symbol
I
T(RMS)
V
DRM
/V
RRM
I
GT
Value
1
1000
≤5 or ≤10
Unit
A
T2(2)
13
2
TO-92
V
mA
G(3)
T1(1)
ABSOLUTE MAXIMUM RATINGS
Parameter
Storage junction temperature range
Operating junction temperature range
Repetitive peak off-state voltage( T
j
=25℃)
Repetitive peak reverse voltage( T
j
=25℃)
Non repetitive surge peak Off-state voltage
Non repetitive peak reverse voltage
RMS on-state current
SOT-89/ SOT-223
(T
C
=70℃)
TO-92 (T
C
=57℃)
Non repetitive surge peak on-state current
( full cycle, F=50Hz)
I
2
t value for fusing ( tp=10ms)
Rate of rise of on-state current (I
G
=2×I
GT
)
Peak gate current
Average gate power dissipation
TEL
：+86-513-83639777
Symbol
T
stg
T
j
V
DRM
V
RRM
V
DSM
V
RSM
I
T(RMS)
Value
-40-150
-40-125
1000
1000
V
DRM
+100
V
RRM
+100
1
Unit
℃
℃
V
V
V
V
A
I
TSM
I
2
t
dI
T
/dt
I
GM
P
G(AV)
10
1.12
50
1
0.2
A
A
2
s
A/μs
A
W
http://www.jjwdz.com
- 1 / 5-
ACJT1 Series
Peak gate power
JieJie Microelectronics CO. , Ltd
P
GM
1
W
ELECTRICAL CHARACTERISTICS
(T
j
=25℃ unless otherwise specified)
Value
Symbol
I
GT
V
GT
V
GD
I
L
I
H
dV/dt
Test Condition
Quadrant
ACJT105
Ⅰ-Ⅱ-Ⅲ
V
D
=12V R
L
=33Ω
V
D
=V
DRM
T
j
=125℃
R
L
=3.3KΩ
I
G
=1.2I
GT
I
T
=100mA
V
D
=2/3V
DRM
Gate Open T
j
=125℃
Ⅰ-Ⅱ-Ⅲ
Ⅰ-Ⅱ-Ⅲ
Ⅰ-Ⅲ
Ⅱ
MAX
25
MAX
MIN
10
400
35
20
600
mA
V/μs
MAX
MAX
MIN
15
5
1.4
0.2
25
mA
ACJT110
10
1.5
mA
V
V
Unit
STATIC CHARACTERISTICS
Symbol
V
TM
I
DRM
I
RRM
Parameter
I
TM
=1.4A tp=380μs
V
D
=V
DRM
V
R
=V
RRM
T
j
=25℃
T
j
=25℃
T
j
=125℃
Value(MAX)
1.5
10
0.5
Unit
V
μA
mA
THERMAL RESISTANCES
Symbol
Parameter
TO-92
R
th(j-c)
junction to case(AC)
SOT-223
SOT-89
Value
60
31
44
℃/W
Unit
TEL
：+86-513-83639777
- 2 / 5-
http://www.jjwdz.com
ACJT1 Series
ORDERING INFORMATION
JieJie Microelectronics CO. , Ltd
AC
AC switch
J
T
Triacs
1
05
-10
U
V:SOT-223
U:TO-92 N:SOT-89
JieJie Microelectronics Co.,Ltd
I
T(RMS)
:1A
10:V
DRM
/V
RRM
≥1000V
05: I
GT1-3
≤5mA
10: I
GT1-3
≤10mA
PACKAGE MECHANICAL DATA
TEL
：+86-513-83639777
- 3 / 5-
http://www.jjwdz.com
ACJT1 Series
PACKAGE MECHANICAL DATA
N
JieJie Microelectronics CO. , Ltd
Dimensions
C
N
Ref.
Millimeters
Min.
Typ.
Max.
5.20
5.33
4.19
0.533
0.80
1.1
1.27
2.30
-
-
-
0.50
15.0
2.66
2.06
4.3
Min.
0.175
0.170
0.125
0.016
0.024
-
-
-
0.014
0.500
0.080
0.073
-
Inches
Typ.
Max.
0.205
0.210
0.165
0.021
0.031
0.043
0.050
0.091
-
-
-
0.020
0.591
0.105
0.081
0.169
V
F
A
5
1.
m
m
4.45
4.32
3.18
0.407
0.60
-
-
-
0.36
12.70
2.04
1.86
-
A
Φ
M
B
C
D
ax
B
H
E
F
G
E
P
K
H
J
K
D
G
J
N
P
TO-92
V
FIG.1
Maximum power dissipation versus RMS
on-state current
P(w)
1.5
FIG.2:
RMS on-state current versus case
temperature
I
T(RMS)
(A)
1.5
α=180°
1.0
1.0
TO-92
SOT-89/
SOT-223
0.5
0.5
0
0
0.2
I
T(RMS)
(A)
0.4
0.6
0.8
1.0
0
0
Tc (℃)
25
50
75
100
125
FIG.3:
Surge peak on-state current versus
number of cycles
I
TSM
(A)
14
t=20ms
FIG.4:
On-state characteristics (maximum
values)
I
TM
(A)
2.0
12
10
8
One cycle
1.5
Tj=125℃
1.0
6
4
2
0
1
10
Number of cycles
100
1000
0
0
0.5
1.0
1.5
2.0
V
TM
(V)
2.5
0.5
Tj=25℃
TEL
：+86-513-83639777
- 4 / 5-
http://www.jjwdz.com
ACJT1 Series
FIG.5:
Relative variations of gate trigger current
versus junction temperature
I
GT
(Tj) /I
GT
(Tj=25℃)
3.0
2.5
2.0
1.5
1.0
0.5
0.0
-40
-20
0
20
Tj (℃)
40
60
80
100
120
140
I
GT3
I
GT1
&I
GT2
JieJie Microelectronics CO. , Ltd
FIG.6:
Relative variations of holding current,
latching curretn versus junction temperature
I
H
,I
L
(Tj) /I
H
,I
L
(Tj=25℃)
3.0
2.5
2.0
1.5
1.0
0.5
0.0
-40
Tj (℃)
-20
0
20
40
60
80
100
120
140
I
L
I
H
Information furnished in this document is believed to be accurate and reliable. However,
Jiangsu JieJie Microelectronics Co.,Ltd assumes no responsibility for the consequences
of use without consideration for such information nor use beyond it.
Information mentioned in this document is subject to change without notice, apart from
that when an agreement is signed, Jiangsu JieJie complies with the agreement.
Products and information provided in this document have no infringement of patents.
Jiangsu JieJie assumes no responsibility for any infringement of other rights of third
parties which may result from the use of such products and information.
This document is the third version which is made in 22-June-2015. This document
supersedes and replaces all information previously supplied.
is a registered trademark of Jiangsu JieJie Microelectronics Co.,Ltd.
Copyright
©
2015 Jiangsu JieJie Microelectronics Co.,Ltd. Printed All rights reserved.
TEL
：+86-513-83639777
- 5 / 5-
http://www.jjwdz.com
京公网安备 11010802033920号
EEWORLD
