unity-gain buffer amplifiers with a high symmetrical
slew rate of up to 3600V/µs and a very wide band-
width of 320MHz at 5Vp-p output swing. They use a
complementary bipolar IC process, which incorpo-
rates pn-junction isolated high-frequency NPN and
PNP transistors to achieve high-frequency performance
previously unattainable with conventional integrated
circuit technology.
Their unique design offers a high-performance alter-
native to expensive discrete or hybrid solutions.
The BUF600 and BUF601 feature low quiescent
current, low input bias current, small signal delay time
and phase shift, and low differential gain and phase
errors.
The BUF600 with 3mA quiescent current is well-
suited for operation between high-frequency
processing stages. It demonstrates outstanding perfor-
mance even in feedback loops of wide-band amplifiers
or phase-locked loop systems.
The BUF601, with 6mA quiescent current and there-
fore lower output impedance, can easily drive 50Ω
inputs or 75Ω systems and cables.
The broad range of analog and digital applications
extends from decoupling of signal processing stages,
impedance transformation, and input amplifiers for
RF equipment and ATE systems to video systems,
distribution fields, IF/communications systems, and
output drivers for graphic cards.
V+ = +5V
(1)
V
IN
(4)
V
OUT
(8)
Bias
Circuitry
BUFFER
Simplified Circuit Diagram
V– = –5V
(5)
International Airport Industrial Park • Mailing Address: PO Box 11400, Tucson, AZ 85734 • Street Address: 6730 S. Tucson Blvd., Tucson, AZ 85706 • Tel: (520) 746-1111 • Twx: 910-952-1111
Operating Temperature ..................................................... –40°C to +85°C
Storage Temperature ...................................................... –40°C to +125°C
Junction Temperature .................................................................... +150°C
Lead Temperature (soldering, 10s) ................................................ +300°C
NOTE: (1) Inputs are internally diode-clamped to
±V
CC.
PACKAGE/ORDERING INFORMATION
PACKAGE
DRAWING
NUMBER
(1)
006
182
182
TEMPERATURE
RANGE
–40°C to +85°C
–40°C to +85°C
–40°C to +85°C
PRODUCT
BUF600AP
BUF600AU
BUF601AU
PACKAGE
Plastic 8-Pin DIP
SO-8 Surface Mount
SO-8 Surface Mount
NOTE: (1) For detailed drawing and dimension table, please see end of data
sheet, or Appendix C of Burr-Brown IC Data Book.
The information provided herein is believed to be reliable; however, BURR-BROWN assumes no responsibility for inaccuracies or omissions. BURR-BROWN assumes
no responsibility for the use of this information, and all use of such information shall be entirely at the user’s own risk. Prices and specifications are subject to change
without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. BURR-BROWN does not authorize or warrant
any BURR-BROWN product for use in life support devices and/or systems.
®
3
BUF600, 601
INPUT PROTECTION
Static damage has been well recognized for MOSFET de-
vices, but any semiconductor device deserves protection
from this potentially damaging source. The BUF600 and
BUF601 incorporate on-chip ESD protection diodes as shown
in Figure 1. This eliminates the need for the user to add
external protection diodes, which can add capacitance and
degrade AC performance.
ESD Protection Diodes
internally connected to
all pins.
Internal
Circuitry
–V
CC
All input pins on the BUF600 and BUF601 are internally
protected from ESD by means of a pair of back-to-back
reverse-biased diodes to the power supplies as shown. These
diodes will begin to conduct when the input voltage exceeds
either power supply by about 0.7V. This situation can occur
with loss of the amplifier’s power supplies while a signal
source is still present. The diodes can typically withstand a
continuous current of 30mA without destruction. To insure
long term reliability, however, the diode current should be
externally limited to 10mA or so whenever possible.
The internal protection diodes are designed to withstand
2.5kV (using the Human Body Model) and will provide
adequate ESD protection for most normal handling proce-
dures. However, static damage can cause subtle changes in
amplifier input characteristics without necessarily destroy-
ing the device. In precision amplifiers, this may cause a
noticeable degradation of offset and drift. Therefore, static
protection is strongly recommended when handling the
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