IRFB7430PBF
Applications
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Brushed Motor drive applications
BLDC Motor drive applications
Battery powered circuits
Half-bridge and full-bridge topologies
Synchronous rectifier applications
Resonant mode power supplies
OR-ing and redundant power switches
DC/DC and AC/DC converters
DC/AC Inverters
TO-220AB
Benefits
l
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Power MOSFET
D
Improved Gate, Avalanche and Dynamic dV/dt
Ruggedness
Fully Characterized Capacitance and Avalanche
SOA
Enhanced body diode dV/dt and dI/dt Capability
Lead-Free
G
S
V
DSS
R
DS(on)
typ.
max.
I
D (Silicon Limited)
I
D (Package Limited)
40V
1.0m
1.3m
409A
195A
c
Ordering Information
Base Part Number
IRFB7430PbF
Package Type
TO-220
Standard Pack
Form
Tube
Complete Part Number
Quantity
50
IRFB7430PbF
RDS(on), Drain-to -Source On Resistance (m
)
6.0
ID = 100A
500
Limited By Package
400
4.0
ID, Drain Current (A)
300
T J = 125°C
2.0
200
100
T J = 25°C
0.0
4
6
8
10
12
14
16
18
20
0
25
50
75
100
125
150
175
T C , Case Temperature (°C)
Fig 1.
Typical On-Resistance vs. Gate Voltage
2014-8-10
1
VGS, Gate -to -Source Voltage (V)
Fig 2.
Maximum Drain Current vs. Case Temperature
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IRFB7430PBF
Absolute Maximum Ratings
Symbol
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
D
@ T
C
= 25°C
I
DM
P
D
@T
C
= 25°C
V
GS
T
J
T
STG
Parameter
Continuous Drain Current, V
GS
@ 10V (Silicon Limited)
Continuous Drain Current, V
GS
@ 10V (Silicon Limited)
Continuous Drain Current, V
GS
@ 10V (Wire Bond Limited)
Pulsed Drain Current
Max.
409
289
195
1524
Units
A
d
Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case)
Mounting torque, 6-32 or M3 screw
Single Pulse Avalanche Energy
375
2.5
± 20
-55 to + 175
300
10lbf in (1.1N m)
W
W/°C
V
°C
x
x
Avalanche Characteristics
E
AS (Thermally limited)
E
AS (tested)
I
AR
E
AR
e
Single Pulse Avalanche Energy Tested Value
Avalanche Current
Repetitive Avalanche Energy
Ãd
k
Thermal Resistance
Symbol
R
JC
R
CS
R
JA
d
760
1360
See Fig. 14, 15, 22a, 22b
mJ
A
mJ
Junction-to-Case
Case-to-Sink, Flat Greased Surface
Junction-to-Ambient
j
Parameter
Typ.
–––
0.50
–––
Max.
0.40
–––
62
Units
°C/W
Static @ T
J
= 25°C (unless otherwise specified)
Symbol
V
(BR)DSS
V
(BR)DSS
/T
J
R
DS(on)
V
GS(th)
I
DSS
I
GSS
R
G
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Internal Gate Resistance
Min.
40
–––
–––
–––
2.2
–––
–––
–––
–––
–––
Typ.
–––
0.014
1.0
1.2
–––
–––
–––
–––
–––
2.1
Max. Units
–––
–––
1.3
–––
3.9
1.0
150
100
-100
–––
Conditions
V
V
GS
= 0V, I
D
= 250μA
V/°C Reference to 25°C, I
D
= 1.0mA
m V
GS
= 10V, I
D
= 100A
V
μA
nA
V
GS
= 6.0V, I
D
V
DS
= V
GS
, I
D
= 250μA
V
DS
= 40V, V
GS
= 0V
V
DS
= 40V, V
GS
= 0V, T
J
= 125°C
V
GS
= 20V
V
GS
= -20V
g
= 50A
g
d
Notes:
Calculated continuous current based on maximum allowable junction
temperature. Bond wire current limit is 195A. Note that current
limitations arising from heating of the device leads may occur with
some lead mounting arrangements.
(Refer to AN-1140)
Repetitive rating; pulse width limited by max. junction
temperature.
Limited by T
Jmax
, starting T
J
= 25°C, L = 0.15mH
R
G
= 50, I
AS
= 100A, V
GS
=10V.
I
SD
100A, di/dt
990A/μs, V
DD
V
(BR)DSS
, T
J
175°C.
Pulse width
400μs; duty cycle
2%.
C
oss
eff. (TR) is a fixed capacitance that gives the same charging time
as C
oss
while V
DS
is rising from 0 to 80% V
DSS
.
C
oss
eff. (ER) is a fixed capacitance that gives the same energy as
C
oss
while V
DS
is rising from 0 to 80% V
DSS
.
R
is measured at T
J
approximately 90°C..
This value determined from sample failure population,
starting T
J
= 25°C, L= 0.15mH, R
G
= 50, I
AS
= 100A, V
GS
=10V.
2014-8-10
2
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IRFB7430PBF
Dynamic @ T
J
= 25°C (unless otherwise specified)
Symbol
gfs
Q
g
Q
gs
Q
gd
Q
sync
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
C
oss
eff. (ER)
C
oss
eff. (TR)
Parameter
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Total Gate Charge Sync. (Q
g
- Q
gd
)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Effective Output Capacitance (Energy Related)
Effective Output Capacitance (Time Related)
Min.
150
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
300
77
98
202
32
105
160
100
14240
2130
1460
2605
2920
Max. Units
–––
460
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
S
nC
Conditions
V
DS
= 10V, I
D
= 100A
I
D
= 100A
V
DS
=20V
V
GS
= 10V
I
D
= 100A, V
DS
=0V, V
GS
= 10V
V
DD
= 20V
I
D
= 30A
R
G
= 2.7
V
GS
= 10V
V
GS
= 0V
V
DS
= 25V
ƒ = 1.0 MHz
V
GS
= 0V, V
DS
= 0V to 32V
V
GS
= 0V, V
DS
= 0V to 32V
g
ns
pF
g
h
iÃ
i
h
Diode Characteristics
Symbol
I
S
I
SM
V
SD
dv/dt
t
rr
Q
rr
I
RRM
t
on
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Peak Diode Recovery
Reverse Recovery Time
Min.
–––
Typ.
–––
Max. Units
394
Ãd
f
Reverse Recovery Charge
Reverse Recovery Current
Forward Turn-On Time
MOSFET symbol
showing the
G
–––
–––
1576
A
integral reverse
p-n junction diode.
T
J
= 25°C, I
S
= 100A, V
GS
= 0V
–––
0.86
1.2
V
–––
2.7
–––
V/ns T
J
= 175°C, I
S
= 100A, V
DS
= 40V
–––
52
–––
ns T
J
= 25°C
V
R
= 34V,
I
F
= 100A
–––
52
–––
T
J
= 125°C
di/dt = 100A/μs
–––
97
–––
nC T
J
= 25°C
–––
97
–––
T
J
= 125°C
–––
2.3
–––
A
T
J
= 25°C
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Conditions
D
A
g
S
g
2014-8-10
3
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IRFB7430PBF
1000
TOP
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
4.8V
4.5V
1000
TOP
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
4.8V
4.5V
ID, Drain-to-Source Current (A)
100
BOTTOM
ID, Drain-to-Source Current (A)
BOTTOM
100
4.5V
10
4.5V
60μs PULSE WIDTH
Tj = 25°C
1
0.1
1
10
100
V DS, Drain-to-Source Voltage (V)
10
0.1
1
Tj = 175°C
10
60μs PULSE WIDTH
100
V DS, Drain-to-Source Voltage (V)
Fig 3.
Typical Output Characteristics
1000
Fig 4.
Typical Output Characteristics
2.0
RDS(on) , Drain-to-Source On Resistance
(Normalized)
ID = 100A
1.8
1.6
1.4
1.2
1.0
0.8
0.6
ID, Drain-to-Source Current (A)
VGS = 10V
100
T J = 25°C
10
TJ = 175°C
VDS = 25V
60μs
PULSE WIDTH
1.0
2
3
4
5
6
7
-60 -40 -20 0 20 40 60 80 100120140160180
T J , Junction Temperature (°C)
VGS, Gate-to-Source Voltage (V)
Fig 5.
Typical Transfer Characteristics
100000
VGS = 0V,
f = 1 MHZ
C iss = C gs + C gd, C ds SHORTED
C rss = C gd
C oss = C ds + C gd
Fig 6.
Normalized On-Resistance vs. Temperature
14.0
VGS, Gate-to-Source Voltage (V)
12.0
10.0
8.0
6.0
4.0
2.0
0.0
ID= 100A
VDS= 32V
VDS= 20V
C, Capacitance (pF)
Ciss
10000
Coss
Crss
1000
1
10
VDS, Drain-to-Source Voltage (V)
100
0
50
100 150 200 250 300 350 400
QG, Total Gate Charge (nC)
Fig 7.
Typical Capacitance vs. Drain-to-Source Voltage
2014-8-10
4
Fig 8.
Typical Gate Charge vs. Gate-to-Source Voltage
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IRFB7430PBF
1000
10000
OPERATION IN THIS AREA
LIMITED BY R DS(on)
1msec
100μsec
ID, Drain-to-Source Current (A)
ISD, Reverse Drain Current (A)
100
T J = 175°C
1000
100
Limited by package
10
10msec
10
T J = 25°C
1
VGS = 0V
0.1
0.0
0.5
1.0
1.5
2.0
2.5
VSD, Source-to-Drain Voltage (V)
1
Tc = 25°C
Tj = 175°C
Single Pulse
0.1
1
DC
0.1
10
100
VDS, Drain-toSource Voltage (V)
V(BR)DSS , Drain-to-Source Breakdown Voltage (V)
Fig 9.
Typical Source-Drain Diode
Forward Voltage
47
Id = 1.0mA
46
45
44
43
42
Fig 10.
Maximum Safe Operating Area
2.5
VDS= 0V to 32V
2.0
Energy (μJ)
1.5
1.0
0.5
41
40
-60 -40 -20 0 20 40 60 80 100120140160180
T J , Temperature ( °C )
0.0
0
5
10
15
20
25
30
35
40
45
Fig 11.
Drain-to-Source Breakdown Voltage
RDS(on), Drain-to -Source On Resistance ( m)
VDS, Drain-to-Source Voltage (V)
Fig 12.
Typical C
OSS
Stored Energy
6.0
VGS = 5.5V
VGS = 6.0V
VGS = 7.0V
VGS = 8.0V
VGS =10V
4.0
2.0
0.0
0
200
400
600
800
1000
1200
ID, Drain Current (A)
Fig 13.
Typical On-Resistance vs. Drain Current
2014-8-10
5
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