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BUJ106A

Description
Silicon Diffused Power Transistor
CategoryDiscrete semiconductor    The transistor   
File Size44KB,7 Pages
ManufacturerPhilips Semiconductors (NXP Semiconductors N.V.)
Websitehttps://www.nxp.com/
Environmental Compliance
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BUJ106A Overview

Silicon Diffused Power Transistor

BUJ106A Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerPhilips Semiconductors (NXP Semiconductors N.V.)
Reach Compliance Codeunknow
Maximum collector current (IC)8 A
ConfigurationSingle
Minimum DC current gain (hFE)10
JESD-609 codee3
Maximum operating temperature150 °C
Polarity/channel typeNPN
Maximum power dissipation(Abs)80 W
surface mountNO
Terminal surfaceMatte Tin (Sn)
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BUJ106A
GENERAL DESCRIPTION
High-voltage, high-speed planar-passivated npn power switching transistor in TO220AB envelope intended for use
in high frequency electronic lighting ballast applications, converters, inverters, switching regulators, motor control
systems, etc.
QUICK REFERENCE DATA
SYMBOL
V
CESM
V
CBO
V
CEO
I
C
I
CM
P
tot
V
CEsat
h
FEsat
t
f
PARAMETER
Collector-emitter voltage peak value
Collector-Base voltage (open emitter)
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Total power dissipation
Collector-emitter saturation voltage
Fall time
CONDITIONS
V
BE
= 0 V
TYP.
-
-
-
-
-
-
0.4
10
20
MAX.
700
700
400
10
20
80
1.0
15
50
UNIT
V
V
V
A
A
W
V
ns
T
mb
25 ˚C
I
C
= 6.0 A;I
B
= 1.2 A
I
C
= 6.0 A; V
CE
= 5 V
I
C
= 5.0 A; I
B1
= 1 A
PINNING - TO220AB
PIN
1
2
3
tab
base
collector
emitter
collector
DESCRIPTION
PIN CONFIGURATION
tab
SYMBOL
c
b
1 23
e
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL
V
CESM
V
CEO
V
CBO
I
C
I
CM
I
B
I
BM
P
tot
T
stg
T
j
PARAMETER
Collector to emitter voltage
Collector to emitter voltage (open base)
Collector to base voltage (open emitter)
Collector current (DC)
Collector current peak value
Base current (DC)
Base current peak value
Total power dissipation
Storage temperature
Junction temperature
CONDITIONS
V
BE
= 0 V
MIN.
-
-
-
-
-
-
-
-
-65
-
MAX.
700
400
700
10
20
5
10
80
150
150
UNIT
V
V
V
A
A
A
A
W
˚C
˚C
T
mb
25 ˚C
THERMAL RESISTANCES
SYMBOL
R
th j-mb
R
th j-a
PARAMETER
Junction to mounting base
Junction to ambient
in free air
CONDITIONS
TYP.
-
60
MAX.
1.56
-
UNIT
K/W
K/W
March 1999
1
Rev 2.000
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