Philips Semiconductors
Objective specification
Silicon Diffused Power Transistor
BUJ302A
GENERAL DESCRIPTION
High-voltage, high-speed planar-passivated npn power switching transistor in TO220AB envelope intended for use
in high frequency electronic lighting ballast applications, converters, inverters, switching regulators, motor control
systems, etc.
QUICK REFERENCE DATA
SYMBOL
V
CESM
V
CBO
V
CEO
I
C
I
CM
P
tot
V
CEsat
t
f
PARAMETER
Collector-emitter voltage peak value
Collector-Base voltage (open emitter)
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Total power dissipation
Collector-emitter saturation voltage
Fall time
CONDITIONS
V
BE
= 0 V
TYP.
-
-
-
-
-
-
-
145
MAX.
1000
1000
500
2
3
50
1.0
160
UNIT
V
V
V
A
A
W
V
ns
T
mb
≤
25 ˚C
I
C
= 1.0 A;I
B
= 0.2 A
Ic=1A,I
B1
=0.2A
PINNING - TO220AB
PIN
1
2
3
tab
base
collector
emitter
collector
DESCRIPTION
PIN CONFIGURATION
tab
SYMBOL
c
b
1 23
e
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL
V
CESM
V
CEO
V
CBO
I
C
I
CM
I
B
I
BM
P
tot
T
stg
T
j
PARAMETER
Collector to emitter voltage
Collector to emitter voltage (open base)
Collector to base voltage (open emitter)
Collector current (DC)
Collector current peak value
Base current (DC)
Base current peak value
Total power dissipation
Storage temperature
Junction temperature
CONDITIONS
V
BE
= 0 V
MIN.
-
-
-
-
-
-
-
-
-65
-
MAX.
1000
500
1000
2
3
0.75
1
50
150
150
UNIT
V
V
V
A
A
A
A
W
˚C
˚C
T
mb
≤
25 ˚C
THERMAL RESISTANCES
SYMBOL
R
th j-mb
R
th j-a
PARAMETER
Junction to mounting base
Junction to ambient
in free air
CONDITIONS
TYP.
-
70
MAX.
2.5
-
UNIT
K/W
K/W
August 1998
1
Rev 1.000
Philips Semiconductors
Objective specification
Silicon Diffused Power Transistor
BUJ302A
STATIC CHARACTERISTICS
T
mb
= 25 ˚C unless otherwise specified
SYMBOL
I
CES
I
CES
I
EBO
V
CEOsust
V
CEsat
V
BEsat
h
FE
PARAMETER
Collector cut-off current
1
Emitter cut-off current
Collector-emitter sustaining voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
DC current gain
CONDITIONS
V
BE
= 0 V; V
CE
= V
CESMmax
V
BE
= 0 V; V
CE
= V
CESMmax
;
T
j
= 125 ˚C
V
EB
= 5 V; I
C
= 0 A
I
B
= 0 A; I
C
= 100 mA;
L = 25 mH
I
C
= 1 A; I
B
= 0.2 A
I
C
= 1 A; I
B
= 0.2 A
I
C
= 10 mA; V
CE
= 5 V
I
C
= 100 mA; V
CE
= 5 V
MIN.
-
-
-
500
-
-
15
14
TYP.
-
-
-
-
-
-
-
-
MAX.
0.2
1.5
1
-
1.0
1.1
35
35
UNIT
mA
mA
mA
V
V
V
DYNAMIC CHARACTERISTICS
T
mb
= 25 ˚C unless otherwise specified
SYMBOL
PARAMETER
Switching times (resistive load)
t
on
t
s
t
f
Turn-on time
Turn-off storage time
Turn-off fall time
Switching times (inductive load)
t
s
t
f
t
s
t
f
Turn-off storage time
Turn-off fall time
Switching times (inductive load)
Turn-off storage time
Turn-off fall time
CONDITIONS
I
Con
= 1.0 A; I
Bon
= -I
Boff
= 0.2 A;
R
L
= 75 ohms; V
BB2
= 4 V;
TYP.
MAX.
UNIT
µs
µs
µs
µs
ns
µs
ns
-
-
-
1.0
4.0
0.8
I
Con
= 1.0 A; I
Bon
= 0.2 A; L
B
= 1
µH;
-V
BB
= 5 V
I
Con
= 1.0 A; I
Bon
= 0.2 A; L
B
= 1
µH;
-V
BB
= 5 V; T
j
= 100 ˚C
-
145
1.4
160
-
-
1.5
200
1
Measured with half sine-wave voltage (curve tracer).
August 1998
2
Rev 1.000
Philips Semiconductors
Objective specification
Silicon Diffused Power Transistor
BUJ302A
MECHANICAL DATA
Dimensions in mm
Net Mass: 2 g
4,5
max
10,3
max
1,3
3,7
2,8
5,9
min
15,8
max
3,0 max
not tinned
3,0
13,5
min
1,3
max
1 2 3
(2x)
2,54 2,54
0,9 max (3x)
0,6
2,4
Fig.1. TO220AB; pin 2 connected to mounting base.
Notes
1. Refer to mounting instructions for TO220 envelopes.
2. Epoxy meets UL94 V0 at 1/8".
August 1998
3
Rev 1.000
Philips Semiconductors
Objective specification
Silicon Diffused Power Transistor
BUJ302A
DEFINITIONS
Data sheet status
Objective specification
Product specification
Limiting values
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
©
Philips Electronics N.V. 1998
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.
This data sheet contains target or goal specifications for product development.
This data sheet contains final product specifications.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.
August 1998
4
Rev 1.000
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