CGH35060F2 / CGH35060P2
60 W, 3100-3500 MHz, 28V, GaN HEMT
Cree’s CGH35060F2/P2 is a gallium nitride (GaN) high electron mobility transistor
(HEMT) designed specifically for high efficiency, high gain and wide bandwidth
capabilities, which makes the CGH35060F2 / P2 ideal for 3.1-3.5 GHz S-band pulsed
amplifier applications. The transistor is supplied in a ceramic/metal flange and pill
package.
Package Type
: 440193 & 44
0206
PN: CGH3506
0F2 & CGH35
060P2
Typical Performance Over 3.1-3.5 GHz
(T
C
= 25˚C)
of Demonstration Amplifier
Parameter
Small Signal Gain
P
OUT @
P
IN
= 36.5 dBm
P
OUT @
P
IN
= 36.5 dBm
Drain Efficiency @ P
IN
= 36.5 dBm
Input Return Loss
3.1 GHz
12.0
47.0
10.4
55.0
-7.3
3.3 GHz
13.2
47.6
11.06
62.0
-17.0
3.5 GHz
11.5
46.7
10.1
62.0
-4.3
Units
dB
dBm
dBm
%
dB
Note:
Measured in the CGH35060F2-AMP1 amplifier circuit, under 100
µsec
Pulse Width, 20% Duty Cycle and 28 V.
Features
•
•
3.1 - 3.5 GHz Operation
60 W Peak Power Capability
•
•
12 dB Small Signal Gain
60 % Drain Efficiency
Rev 4.0 - May 2
015
Subject to change without notice.
www.cree.com/rf
1
Absolute Maximum Ratings (not simultaneous) at 25˚C Case Temperature
Parameter
Drain-Source Voltage
Gate-to-Source Voltage
Power Dissipation
Storage Temperature
Operating Junction Temperature
Maximum Forward Gate Current
Maximum Drain Current
1
Soldering Temperature
2
Screw Torque
Thermal Resistance, Junction to Case, Pulsed
3
Thermal Resistance, Junction to Case, CW
3
Case Operating Temperature
3
Symbol
V
DSS
V
GS
P
DISS
T
STG
T
J
I
GMAX
I
DMAX
T
S
Rating
125
-10, +2
57.6
-55, +150
225
14.4
6
245
80
1.67
2.45
-40, +150
Units
Volts
Volts
Watts
˚C
˚C
mA
A
˚C
in-oz
˚C/W
˚C/W
˚C
85˚C, Pulse Width = 300%, Duty Cycle = 10%
85˚C, Pulse Width = 300%, Duty Cycle = 10%
25˚C
25˚C
Conditions
25˚C
25˚C
τ
R
θJC
R
θJC
T
C
Note:
1
Current limit for long term, reliable operation.
2
Refer to the Application Note on soldering at
http://www.cree.com/rf/document-library
3
Measured for the CGH35060F2 at P
DISS
=
57.6 W
Electrical Characteristics (T
C
= 25˚C)
Characteristics
DC Characteristics
1
Gate Threshold Voltage
Gate Quiescent Voltage
Saturated Drain Current
Drain-Source Breakdown Voltage
V
GS(th)
V
GS(Q)
I
DS
V
BR
-3.8
–
11.6
120
-3.0
-2.7
14.0
–
–2.3
–
-
–
V
DC
V
DC
A
V
DC
V
DS
= 10 V, I
D
= 14.4 mA
V
DS
= 28 V, I
D
= 200 mA
V
DS
= 6.0 V, V
GS
= 2 V
V
GS
= -8 V, I
D
= 14.4 mA
Symbol
Min.
Typ.
Max.
Units
Conditions
RF Characteristics
2,3
(T
C
= 25
˚
C, F
0
= 3.3 GHz unless otherwise noted)
Small Signal Gain
Drain Efficiency
4
Power Output
4
Output Mismatch Stress
Dynamic Characteristics
Input Capacitance
Output Capacitance
Feedback Capacitance
C
GS
C
DS
C
GD
–
–
–
19.0
5.9
0.8
–
–
–
pF
pF
pF
V
DS
= 28 V, V
gs
= -8 V, f = 1 MHz
V
DS
= 28 V, V
gs
= -8 V, f = 1 MHz
V
DS
= 28 V, V
gs
= -8 V, f = 1 MHz
G
SS
η
10.0
40
45.4
–
13.0
62
47.6
–
–
–
–
10:1
dB
%
dBm
Y
V
DD
= 28 V, I
DQ
= 200 mA
V
DD
= 28 V, I
DQ
= 200 mA, P
IN
= 36.5 dBm
V
DD
= 28 V, I
DQ
= 200 mA, P
IN
= 36.5 dBm
No damage at all phase angles,
V
DD
= 28 V, I
DQ
= 200 mA, P
OUT
= 60 W Pulsed
P
OUT
VSWR
Notes:
1
Measured on wafer prior to packaging.
2
Measured in the CGH35060F2-AMP1 test fixture.
3
100
µS
Pulse Width at 20% Duty Cycle.
4
Drain Efficiency = P
OUT
/ P
DC.
Copyright © 2013-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
2
CGH35060F2/P2 Rev 4.0
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.CREE
www.cree.com/rf
Typical Performance
Small Signal Gain and Return Losses vs Frequency of the CGH35060F2 and CGH35060P2
V
DD
= 28 V, I
DQ
= 200 mA
20
15
10
5
S11,S21, S22 (dB)
0
-5
-10
-15
-20
-25
-30
2.00
S11
S21
S22
2.50
3.00
3.50
4.00
4.50
5.00
Frequency (GHz)
Output Power, Gain and Drain Efficiency vs Frequency of the CGH35060F2 and CGH35060P2
V
DD
= 28 V, I
DQ
= 200 mA, Pulse Width = 100 µsec, Duty Cycle = 20%
70
70%
60
60%
Power (dBm) (W), Gain (dB)
50
50%
40
40%
30
Pout (dBm)
Pout (W)
Gain (dB)
ηd (%)
30%
20
20%
10
10%
0
3050
3100
3150
3200
3250
3300
3350
3400
3450
3500
0%
3550
Frequency (MHz)
Copyright © 2013-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
3
CGH35060F2/P2 Rev 4.0
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.CREE
www.cree.com/rf
Drain Efficiency (%)
Typical Pulse Droop Performance
49.00
48.80
48.60
48.40
48.20
5000uS 10% (dBm)
300uS 10% (dBm)
1000uS 10% (dBm)
100uS 10% (dBm)
Power Level (dBm)
48.00
47.80
47.60
47.40
47.20
47.00
000.E+0 500.E-6 1.E-3
1.5E-3
2.E-3
2.5E-3
3.E-3
3.5E-3
4.E-3
4.5E-3
5.E-3
5.5E-3
6.E-3
Time (S)
Typical Performance Data
Simulated Maximum Available Gain and K Factor of the CGH35060F2 and CGH35060P2
V
DD
= 28 V, I
DQ
= 200 mA
MAG (dB)
Copyright © 2013-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
4
CGH35060F2/P2 Rev 4.0
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.CREE
www.cree.com/rf
K Factor
Source and Load Impedances
D
Z Source
G
Z Load
S
Frequency (MHz)
3100
3200
3300
3400
3500
Z Source
3.6 -j13.5
3.6 -j12.8
3.5 -j12.1
3.5 -j11.4
3.3 -j10.7
Z Load
8.0 -j8.5
7.1 -j7.7
6.5 -j6.8
6.0 -j5.9
5.6 -j5.1
Note
1
: V
DD
= 28V, I
DQ
= 200mA. In the 440193 package.
Note
2
: Impedances are extracted from the CGH35060F2-AMP1 demonstration
circuit and are not source and load pull data derived from the transistor.
Electrostatic Discharge (ESD) Classifications
Parameter
Human Body Model
Charge Device Model
Symbol
HBM
CDM
Class
1A (> 250 V)
II (200 < 500 V)
Test Methodology
JEDEC JESD22 A114-D
JEDEC JESD22 C101-C
Copyright © 2013-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
5
CGH35060F2/P2 Rev 4.0
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.CREE
www.cree.com/rf
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