CGH40120P
120 W, RF Power GaN HEMT
Cree’s CGH40120P is an unmatched, gallium nitride (GaN) high electron mobility
transistor (HEMT). The CGH40120P, operating from a 28 volt rail, offers a general
purpose, broadband solution to a variety of RF and microwave applications. GaN
HEMTs offer high efficiency, high gain and wide bandwidth capabilities making the
CGH40120P ideal for linear and compressed amplifier circuits. The transistor is
available in a metal-ceramic pill package.
Package Type
s: 440206
PN: CGH4012
0P
FEATURES
•
•
•
•
•
•
Up to 2.5 GHz Operation
20 dB Small Signal Gain at 1.0 GHz
15 dB Small Signal Gain at 2.0 GHz
120 W Typical P
SAT
70 % Efficiency at P
SAT
28 V Operation
APPLICATIONS
•
•
•
•
•
2-Way Private Radio
Broadband Amplifiers
Cellular Infrastructure
Test Instrumentation
Class A, AB, Linear amplifiers suitable for
OFDM, W-CDMA, EDGE, CDMA waveforms
Rev 3.0 - May 2
015
Subject to change without notice.
www.cree.com/rf
1
Absolute Maximum Ratings (not simultaneous) at 25˚C Case Temperature
Parameter
Drain-Source Voltage
Gate-to-Source Voltage
Storage Temperature
Operating Junction Temperature
Maximum Forward Gate Current
Maximum Drain Current
1
Soldering Temperature
2
Screw Torque
Thermal Resistance, Junction to Case
3
Case Operating Temperature
3,4
Symbol
V
DSS
V
GS
T
STG
T
J
I
GMAX
I
DMAX
T
S
Rating
84
-10, +2
-65, +150
225
30
12
245
80
1.32
-40, +150
Units
Volts
Volts
˚C
˚C
mA
A
˚C
in-oz
˚C/W
˚C
85˚C
25˚C
25˚C
Conditions
25˚C
25˚C
τ
R
θJC
T
C
Note:
1
Current limit for long term, reliable operation
2
Refer to the Application Note on soldering at
www.cree.com/RF/Document-Library
3
Measured for the CGH40120P at P
DISS
= 115 W.
4
See also, the Power Dissipation De-rating Curve on Page 6.
Electrical Characteristics (T
C
= 25˚C)
Characteristics
DC Characteristics
1
Gate Threshold Voltage
Gate Quiescent Voltage
Saturated Drain Current
2
Drain-Source Breakdown Voltage
V
GS(th)
V
GS(Q)
I
DS
V
BR
-3.8
–
23.2
120
-3.0
-2.7
28.0
–
-2.3
–
–
–
V
DC
V
DC
A
V
DC
V
DS
= 10 V, I
D
= 28.8 mA
V
DS
= 28 V, I
D
= 1.0 A
V
DS
= 6.0 V, V
GS
= 2.0 V
V
GS
= -8 V, I
D
= 28.8 mA
Symbol
Min.
Typ.
Max.
Units
Conditions
RF Characteristics
3
(T
C
= 25
˚
C, F
0
= 1.3 GHz unless otherwise noted)
Power Gain
Power Output
Drain Efficiency
4
G
SS
P
OUT
η
–
–
–
15.5
100
60
–
–
–
dB
W
%
V
DD
= 28 V, I
DQ
= 1.0 A, P
IN
= 35 dBm, Pulse Width =
100 usec, Duty Cycle = 10%
V
DD
= 28 V, I
DQ
= 1.0 A, P
IN
= 35 dBm, Pulse Width =
100 usec, Duty Cycle = 10%
V
DD
= 28 V, I
DQ
= 1.0 A, P
IN
= 35 dBm, Pulse Width =
100 usec, Duty Cycle = 10%
No damage at all phase angles,
V
DD
= 28 V, I
DQ
= 1.0 A,
P
OUT
= 100 W CW
Output Mismatch Stress
Dynamic Characteristics
Input Capacitance
Output Capacitance
Feedback Capacitance
VSWR
–
–
10 : 1
Y
C
GS
C
DS
C
GD
–
–
–
35.3
9.1
1.6
–
–
–
pF
pF
pF
V
DS
= 28 V, V
gs
= -8 V, f = 1 MHz
V
DS
= 28 V, V
gs
= -8 V, f = 1 MHz
V
DS
= 28 V, V
gs
= -8 V, f = 1 MHz
Notes:
1
Measured on wafer prior to packaging.
2
Scaled from PCM data.
3
Measured in CGH40120P-AMP
4
Drain Efficiency = P
OUT
/ P
DC
Copyright © 2012-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
2
CGH40120P Rev 3.0
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
Typical Performance
25
Gain and Input Return Loss vs Frequency measured in
Broadband Amplifier Circuit CGH40120-AMP
V
DD
= 28 V, I
DQ
= 1.0 A
CGH40120F S21
CGH40120F S11
25
20
15
Gain (dB)
15
5
10
-5
5
-15
0
800
900
1000
1100
1200
1300
1400
1500
1600
1700
-25
1800
Frequency (MHz)
200
180
160
Output Power, Drain Efficiency and PAE vs Frequency measured in
Broadband Amplifier Circuit CGH40120P-AMP
V
DD
= 28 V, I
DQ
= 1.0 A
Output Power
Drain Efficiency
PAE
100%
95%
90%
85%
80%
75%
70%
65%
60%
55%
50%
1450
Output Power (W)
140
120
100
80
60
40
20
0
1150
1200
1250
Frequency (MHz)
1300
1350
1400
Copyright © 2012-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
3
CGH40120P Rev 3.0
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
Efficiency (%)
Input Return Loss (dB)
Typical Performance
Associated Gain, Output Power, Drain Efficiency and PAE vs Frequency
measured in Broadband Amplifier Circuit CGH40120P-AMP
V
DD
= 28 V, I
DQ
= 1.0 A
60
55
50
100%
90%
80%
70%
60%
50%
Output Power
Associated Gain
Drain Efficiency
PAE
40%
30%
20%
10%
0%
1450
Output Power (dBm), Associated Gain (dB)
45
40
35
30
25
20
15
10
1150
1200
1250
Frequency (MHz)
1300
1350
1400
Efficiency (%)
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
Copyright © 2012-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
4
CGH40120P Rev 3.0
Typical Performance
Simulated Maximum Available
CGH40120F
K Factor of the CGH40120
Gain and
V
DD
= 28 V, I
DQ
= 1.0 A
MAG (dB)
Typical Noise Performance
Simulated Minimum Noise Figure and Noise Resistance vs Frequency of the CGH40120
V
DD
= 28 V, I
DQ
= 1 A
Minimum Noise Figure (dB)
Electrostatic Discharge (ESD) Classifications
Parameter
Human Body Model
Charge Device Model
Symbol
HBM
CDM
Class
1A > 250 V
1 < 200 V
Test Methodology
JEDEC JESD22 A114-D
JEDEC JESD22 C101-C
Noise Resistance (Ohms)
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
Copyright © 2012-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
5
CGH40120P Rev 3.0
K Factor
ARM Technology
京公网安备 11010802033920号
EEWORLD
