3P4MH, 3P6MH
The 3P4MH and 3P6MH are P-gate fully diffused mold
SCRs with an average on-current of 3 A. The repeat peak off-
voltages (and reverse voltages) are 400 V and 600 V.
PACKAGE DRAWING (UNIT: mm)
FEATURES
• This transistor features a small and lightweight package and
is easy to handle even on the mounting surface due to its
TO-202AA dimensions. Processing of lead wires and
heatsink (tablet) using jigs is also possible.
• Employs flame-retardant epoxy resin (UL94V-0).
APPLICATIONS
Noncontact switches of consumer electronic euipments,
electric equipments, audio quipments, and light indutry
equipements
Electrode connection
<1>Cathode
<2>Anode
<3>Gate
Standard weight: 1.4
*TC test bench-mark
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)
°
Parameter
Non-repetitive peak reverse voltage
Non-repetitive peak off-state voltage
Repetitive peak reverse voltage
Repetitive peak off-voltage
Average on-state current
Effective on-state current
Surge on-state current
Fusing current
Critical rate of rise of on-state current
Peak gate power dissipation
Average gate power dissipation
Peak gate forward current
Peak gate reverse voltage
Junction temperature
Storage temperature
Symbol
V
RSM
V
DSM
V
RRM
V
DRM
I
T(AV)
I
T(RMS)
I
TSM
3P4MH
3P6MH
Ratings
V
V
V
V
A
A
A
A
2
s
A/
µ
s
W
W
A
V
°C
°C
Unit
R
GK
= 1 kΩ
R
GK
= 1 kΩ
R
GK
= 1 kΩ
R
GK
= 1 kΩ
Refer to Figure 11.
−
Refer to Figure 2.
−
−
Refer to Figure 3.
−
−
−
−
500
700
500
700
400
600
400
600
3 (Tc = 87°C, Single half-wave,
θ
= 180°)
4.7
65 (f = 50 Hz, Sine half-wave, 1 cycle)
70 (f = 60 Hz, Sine half-wave, 1 cycle)
20 (1 ms≤t≤10 ms)
50
2 (f≥50 Hz, Duty≤10%)
0.2
1 (f≥50 Hz, Duty≤10%)
6
−40
to +125
−55
tp +150
∫
i
t
dt
dI
T
/dt
P
GM
P
G(AV)
I
FGM
V
RGM
T
j
T
stg
2
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