Cree
®
UltraThin
®
Gen 3 LEDs
Data Sheet
CxxxUT170-Sxxxx-31
Cree’s UltraThin
®
LEDs combine highly efficient InGaN materials with Cree’s proprietary G•SiC
®
substrate to deliver
superior price/performance for blue LEDs. These vertically structured LED chips are small in size and require a low
forward voltage. Cree’s UT™ series chips are tested for conformity to optical and electrical specifications and the
ability to withstand 1000 V ESD. Applications include keypad backlighting where sub-miniaturization and thinner
form factors are required.
FEATURES
•
•
•
Small Chip – 170 x 170 x 50 μm
Single Wire Bond Structure
UT LED Performance
–
–
–
–
•
•
–
450 nm – 12+ mW
460 nm – 12+ mW
470 nm – 10+ mW
527 nm – 4+ mW
2.95 V Typical at 5 mA
APPLICATIONS
•
•
•
•
Mobile Phone Keypads
Audio Product Display Lighting
Mobile Appliance Keypads
Automotive Applications
Low Forward Voltage
Class 2 ESD Rating
CxxxUT170-Sxxxx-31 Chip Diagram
Anode (+), Ф85
µm
(Bonding area, Ф70
µm)
.-
CPR3GQ Rev
Data Sheet:
170 x 170
µm
Bottom Surface
130 x 130
µm
Cathode (-)
80 x 80
µm
Side View
Bottom View
Junction, 140 x 140
µm
Thickness 50
µm
Top View
Subject to change without notice.
www.cree.com
1
Maximum Ratings at T
A
= 25°C
Notes 1&3
DC Forward Current
Peak Forward Current (1/10 duty cycle @ 1 kHz)
LED Junction Temperature
Reverse Voltage
Operating Temperature Range
LED Chip Storage Temperature
Recommended Die Sheet Storage Conditions
Electrostatic Discharge Threshold (HBM)
Note 2
Electrostatic Discharge Classification (MIL-STD-883E)
Note 2
Typical Electrical/Optical Characteristics at T
A
= 25°C, If = 5 mA
Part Number
Forward Voltage (V
f
, V)
Min.
C450UT170-Sxxxx-31
C460UT170-Sxxxx-31
C470UT170-Sxxxx-31
C527UT170-Sxxxx-31
Mechanical Specifications
Description
P-N Junction Area (μm)
Chip Top Area (μm)
Chip Thickness (μm)
Chip Bottom Area (μm)
Au Bond Pad Diameter (μm)
Bonding Area Diameter (μm)
Note 4
Au Bond Pad Thickness (μm)
Backside Contact Metal Area (μm)
2.7
2.7
2.7
2.7
Typ.
2.95
2.95
2.95
3.0
Max.
3.1
3.1
3.1
3.2
Note 3
CxxxUT170-Sxxxx-31
30 mA
70 mA
125°C
5 V
-40°C to +100°C
-40°C to +120°C
≤30°C / ≤85% RH
1000 V
Class 2
Reverse Current
[I(Vr=5 V), μA]
Max.
2
2
2
2
Full Width Half Max
(λ
D
, nm)
Typ.
21
21
22
35
CxxxUT170-Sxxxx-31
Dimension
140 x 140
170 x 170
50
130 x 130
85
70
1.2
80 x 80
Tolerance
± 25
± 25
± 10
± 25
-5, +15
-5, +15
± 0.5
± 25
Notes:
1. Maximum ratings are package dependent. The above ratings were determined using a thru-hole package (with Hysol
®
OS4000
encapsulant) for characterization. Ratings for other packages may differ. The forward currents (DC and Peak) are not limited by
the die but by the effect of the LED junction temperature on the package. The junction temperature limit of 125°C is a limit of
the thru-hole package; junction temperature should be characterized in a specific package to determine limitations. Assembly
processing temperature must not exceed 325°C (< 5 seconds).
2. Product resistance to electrostatic discharge (ESD) according to the HBM is measured by simulating ESD using a rapid avalanche
energy test (RAET). The RAET procedures are designed to approximate the minimum ESD ratings shown. The ESD classification
of Class 2 is based on sample testing according to MIL-STD-883E.
3. All products conform to the listed minimum and maximum specifications for electrical and optical characteristics when assembled
and operated at 5 mA within the maximum ratings shown above. Efficiency decreases at higher currents. Typical values given
are within the range of average values expected by manufacturer in large quantities and are provided for information only. All
measurements were made using lamps in thru-hole packages (with Hysol OS4000 encapsulant). The amount of die attach
adhesive used will affect light output; it is recommended that the adhesive amount be optimized to meet the requirements of each
specific application. Optical characteristics measured in an integrating sphere using Illuminance E.
4. Bonding Area is defined as the bond pad area exposed through the opening in the passivation layer.
5. Specifications are subject to change without notice.
© 2014 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree®, the Cree logo,
G•SiC® and UltraThin® are registered trademarks, and UT™ is a trademark of Cree, Inc. Hysol
®
is a registered trademark of
Henkel Corporation.
2
CPR3GQ Rev. - (201409)
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703-8475 USA
Tel: +1-919-313-5300
Fax: +1-919-313-5870
www.cree.com/chips
Standard Bins for CxxxUT170-Sxxxx-31
LED chips are sorted to the radiant
flux (RF) and dominant
wavelength (DW) bins shown. Sorted die sheets contain
die from only one bin. Sorted die kit (CxxxUT170-Sxxxx-31) orders may be filled with any or all bins (CxxxUT170-
xxxx-31) contained in the kit. All RF values are measured at If = 20 mA and all DW values are measured at If = 5 mA.
Radiant Flux (mW)
C450UT170-S1200-31
C450UT170-0113-31
C450UT170-0114-31
C450UT170-0110-31
C450UT170-0106-31
C450UT170-0115-31
C450UT170-0111-31
C450UT170-0107-31
C450UT170-0116-31
C450UT170-0112-31
C450UT170-0108-31
16
14
12
445
C450UT170-0109-31
C450UT170-0105-31
447.5
450
Dominant Wavelength (nm)
452.5
455
Radiant Flux (mW)
C460UT170-S1200-31
C460UT170-0113-31
C460UT170-0114-31
C460UT170-0110-31
C460UT170-0106-31
C460UT170-0115-31
C460UT170-0111-31
C460UT170-0107-31
C460UT170-0116-31
C460UT170-0112-31
C460UT170-0108-31
16
C460UT170-0109-31
14
12
455
C460UT170-0105-31
457.5
460
Dominant Wavelength (nm)
462.5
465
© 2014 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree®, the Cree logo,
G•SiC® and UltraThin® are registered trademarks, and UT™ is a trademark of Cree, Inc. Hysol
®
is a registered trademark of
Henkel Corporation.
3
CPR3GQ Rev. - (201409)
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703-8475 USA
Tel: +1-919-313-5300
Fax: +1-919-313-5870
www.cree.com/chips
Standard Bins for CxxxUT170-Sxxxx-31 (continued)
LED chips are sorted to the radiant
flux (RF) and dominant
wavelength (DW) bins shown. Sorted die sheets contain
die from only one bin. Sorted die kit (CxxxUT170-Sxxxx-31) orders may be filled with any or all bins (CxxxUT170-
xxxx-31) contained in the kit. All RF values are measured at If = 20 mA and all DW values are measured at If = 5 mA.
Radiant Flux (mW)
C470UT170-S1000-31
14
12
C470UT170-0109-31
C470UT170-0105-31
C470UT170-0101-31
C470UT170-0110-31
C470UT170-0106-31
C470UT170-0102-31
C470UT170-0111-31
C470UT170-0107-31
C470UT170-0103-31
C470UT170-0112-31
C470UT170-0108-31
C470UT170-0104-31
10
465
467.5
470
Dominant Wavelength (nm)
472.5
475
C527UT170-S0400-31
Radiant Flux (mW)
C527UT170-0110-31
C527UT170-0111-31
C527UT170-0108-31
C527UT170-0105-31
C527UT170-0102-31
C527UT170-0112-31
C527UT170-0109-31
C527UT170-0106-31
C527UT170-0103-31
7
C527UT170-0107-31
6
C527UT170-0104-31
5
C527UT170-0101-31
4
520
525
530
535
Dominant Wavelength (nm)
© 2014 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree®, the Cree logo,
G•SiC® and UltraThin® are registered trademarks, and UT™ is a trademark of Cree, Inc. Hysol
®
is a registered trademark of
Henkel Corporation.
4
CPR3GQ Rev. - (201409)
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703-8475 USA
Tel: +1-919-313-5300
Fax: +1-919-313-5870
www.cree.com/chips
Standard Bins for CxxxUT170-Sxxxx-31
These are representative measurements for the UT product. Actual curves will vary slightly for the various radiant flux
and dominant wavelength bins.
800%
700%
600%
500%
400%
300%
200%
100%
0%
Relative Intensity vs. Forward Current
Relative Light Intensity
0
10
20
30
40
If (mA)
50
60
70
Forward Current vs. Forward Voltage
70
60
50
If (mA)
40
30
20
10
0
2
3
Vf (V)
4
5
Wavelength Shift vs. Forward Current
10
DW Shift (nm)
5
0
-5
-10
-15
-20
-25
0
10
20
30
40
50
60
70
If (mA)
© 2014 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree®, the Cree logo,
G•SiC® and UltraThin® are registered trademarks, and UT™ is a trademark of Cree, Inc. Hysol
®
is a registered trademark of
Henkel Corporation.
5
CPR3GQ Rev. - (201409)
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703-8475 USA
Tel: +1-919-313-5300
Fax: +1-919-313-5870
www.cree.com/chips
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