Philips Semiconductors
Product specification
PowerMOS transistor
TOPFET high side switch
DESCRIPTION
Monolithic temperature and
overload protected power switch
based on MOSFET technology in a
5 pin plastic envelope, configured
as a single high side switch.
BUK201-50Y
QUICK REFERENCE DATA
SYMBOL
I
L
SYMBOL
PARAMETER
Nominal load current (ISO)
PARAMETER
Continuous off-state supply voltage
Continuous load current
Continuous junction temperature
On-state resistance
MIN.
6
MAX.
50
15
150
60
UNIT
A
UNIT
V
A
˚C
mΩ
APPLICATIONS
General controller for driving
lamps, motors, solenoids, heaters.
V
BG
I
L
T
j
R
ON
FEATURES
Vertical power DMOS switch
Low on-state resistance
5 V logic compatible input
Overtemperature protection -
self resets with hysteresis
Overload protection against
short circuit load with
output current limiting;
latched - reset by input
High supply voltage load
protection
Supply undervoltage lock out
Status indication for overload
protection activated
Diagnostic status indication
of open circuit load
Very low quiescent current
Voltage clamping for turn off of
inductive loads
ESD protection on all pins
Reverse battery and
overvoltage protection
FUNCTIONAL BLOCK DIAGRAM
BATT
STATUS
POWER
INPUT
MOSFET
CONTROL &
PROTECTION
CIRCUITS
LOAD
GROUND
RG
Fig.1. Elements of the TOPFET HSS with internal ground resistor.
PINNING - SOT263
PIN
1
2
3
4
5
tab
DESCRIPTION
Ground
Input
Battery
(+ve supply)
Status
Load
PIN CONFIGURATION
tab
SYMBOL
I
S
1 2345
B
TOPFET
HSS
G
L
leadform
263-01
Fig. 2.
connected to pin 3
Fig. 3.
July 1996
1
Rev 1.000
Philips Semiconductors
Product specification
PowerMOS transistor
TOPFET high side switch
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL
V
BG
PARAMETER
Battery voltages
Continuous off-state supply voltage
Reverse battery voltages
1
Repetitive peak supply voltage
Continuous reverse supply voltage
Continuous load current
Total power dissipation
Storage temperature
Continuous junction temperature
2
Lead temperature
Input and status
Continuous input current
Continuous status current
Repetitive peak input current
Repetitive peak status current
Inductive load clamping
E
BL
Non-repetitive clamping energy
T
mb
= 150 ˚C prior to turn-off
-
CONDITIONS
-
External resistors:
R
I
= R
S
≥
4.7 kΩ,
δ ≤
0.1
R
I
= R
S
≥
4.7 kΩ
T
mb
≤
115 ˚C
T
mb
≤
25 ˚C
-
-
during soldering
MIN.
0
BUK201-50Y
MAX.
50
UNIT
V
-V
BG
-V
BG
I
L
P
D
T
stg
T
j
T
sold
-
-
-
-
-55
-
-
32
16
15
83.3
175
150
250
V
V
A
W
˚C
˚C
˚C
I
I
I
S
I
I
I
S
-
-
δ ≤
0.1
δ ≤
0.1
-5
-5
-20
-20
5
5
20
20
mA
mA
mA
mA
1.2
J
ESD LIMITING VALUE
SYMBOL
V
C
PARAMETER
Electrostatic discharge capacitor
voltage
CONDITIONS
Human body model;
C = 250 pF; R = 1.5 kΩ
MIN.
-
MAX.
2
UNIT
kV
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Thermal resistance
3
R
th j-mb
R
th j-a
Junction to mounting base
Junction to ambient
-
in free air
-
-
1.2
60
1.5
75
K/W
K/W
CONDITIONS
MIN.
TYP.
MAX.
UNIT
1
Reverse battery voltage is allowed only with external input and status resistors to limit the currents to a safe value.
2
For normal continuous operation. A higher T
j
is allowed as an overload condition but at the threshold T
j(TO)
the over temperature trip operates
to protect the switch.
3
Of the output Power MOS transistor.
July 1996
2
Rev 1.000
Philips Semiconductors
Product specification
PowerMOS transistor
TOPFET high side switch
STATIC CHARACTERISTICS
T
mb
= 25 ˚C unless otherwise stated
SYMBOL
V
BG
V
BL
-V
LG
PARAMETER
Clamping voltages
Battery to ground
Battery to load
Negative load to ground
Supply voltage
Operating range
1
Currents
I
L
I
B
I
G
I
L
R
ON
R
ON
R
G
Nominal load current
2
Quiescent current
3
Operating current
4
Off-state load current
5
Resistances
On-state resistance
6
On-state resistance
Internal ground resistance
CONDITIONS
I
G
= 1 mA
I
L
= I
G
= 1 mA
I
L
= 1 mA
battery to ground
-
V
BG
= 13 V
V
BL
= 0.5 V; T
mb
= 85 ˚C
V
IG
= 0 V; V
LG
= 0 V
V
IG
= 5 V; I
L
= 0 A
V
BL
= 13 V; V
IG
= 0 V
V
BG
= 13 V; I
L
= 7.5 A; t
p
= 300
µs
V
BG
= 5 V; I
L
= 1.5 A; t
p
= 300
µs
I
G
= 10 mA
6
-
1.5
-
MIN.
50
50
12
BUK201-50Y
TYP.
55
55
17
MAX.
65
65
21
UNIT
V
V
V
V
BG
5
-
40
V
-
0.1
2.2
0.1
-
2
4
1
A
µA
mA
µA
-
-
-
45
70
150
60
90
-
mΩ
mΩ
Ω
INPUT CHARACTERISTICS
T
mb
= 25 ˚C; V
BG
= 13 V
SYMBOL
I
I
V
IG
V
IG(ON)
V
IG(OFF)
PARAMETER
Input current
Input clamping voltage
Input turn-on threshold voltage
Input turn-off threshold voltage
CONDITIONS
V
IG
= 5 V
I
I
= 200
µA
MIN.
35
6
-
1.5
TYP.
60
7.5
2.1
2
MAX.
100
8.5
2.7
-
UNIT
µA
V
V
V
1
On-state resistance is increased if the supply voltage is less than 9 V. Refer to figure 8.
2
Defined as in ISO 10483-1.
3
This is the continuous current drawn from the battery when the input is low and includes leakage current to the load.
4
This is the continuous current drawn from the battery with no load connected, but with the input high.
5
The measured current is in the load pin only.
6
The supply and input voltage for the R
ON
tests are continuous. The specified pulse duration t
p
refers only to the applied load current.
July 1996
3
Rev 1.000
Philips Semiconductors
Product specification
PowerMOS transistor
TOPFET high side switch
PROTECTION FUNCTIONS AND STATUS INDICATIONS
Truth table for normal, open-circuit load and overload conditions and abnormal supply voltages.
FUNCTIONS
SYMBOL
CONDITION
Normal on-state
Normal off-state
I
L(OC)
Open circuit load
1
Open circuit load
T
j(TO)
Over temperature
2
Over temperature
3
V
BL(TO)
Short circuit load
4
Short circuit load
V
BG(TO)
V
BG(LP)
Low supply voltage
5
High supply voltage
6
INPUT
1
0
1
0
1
0
1
0
X
X
TRUTH TABLE
STATUS
1
1
0
1
0
0
0
1
1
1
OUTPUT
1
0
1
0
0
0
0
0
0
0
3
40
4
45
9
150
100
BUK201-50Y
THRESHOLD
MIN.
TYP.
MAX.
UNIT
350
600
mA
175
-
˚C
10.5
12
V
5
50
V
V
For input ‘0’ equals low, ‘1’ equals high, ‘X’ equals don’t care.
For status ‘0’ equals low, ‘1’ equals open or high.
For output switch ‘0’ equals off, ‘1’ equals on.
STATUS CHARACTERISTICS
T
mb
= 25 ˚C.
The status output is an open drain transistor, and requires an external pull-up circuit to indicate a logic high.
SYMBOL
V
SG
V
SG
I
S
I
S
PARAMETER
Status clamping voltage
Status low voltage
Status leakage current
Status saturation current
7
Application information
External pull-up resistor
8
CONDITIONS
I
S
= 100
µA;
V
IG
= 0 V
I
S
= 50
µA;
V
BG
= 13 V; V
IG
= 5 V
V
SG
= 5 V
V
SS
= 5 V; R
S
= 0
Ω;
V
BG
= 13 V
MIN.
6
-
-
-
TYP.
7
0.7
0.1
5
MAX.
8
0.8
1
-
UNIT
V
V
µA
mA
R
S
V
SS
= 5 V
-
100
-
kΩ
1
In the on-state, the switch detects whether the load current is less than the quoted open load threshold current. This is for status indication
only. Typical hysteresis equals 140 mA. The thresholds are specified for supply voltage within the normal working range.
2
After cooling below the reset temperature the switch will resume normal operation. The reset temperature is lower than the trip temperature by
typically 10 ˚C.
3
If the overtemperature protection has operated, status remains low to indicate the overtemperature condition even if the input is taken low,
providing the device has not cooled below the reset temperature.
4
After short circuit protection has operated, the input voltage must be toggled low for the switch to resume normal operation.
5
Undervoltage sensor causes the device to switch off. Typical hysteresis equals 0.7 V.
6
Overvoltage sensor causes the device to switch off to protect the load. Typical hysteresis equals 1.3 V.
7
In a fault condition with the pull-up resistor short circuited while the status transistor is conducting.
8
The pull-up resistor also protects the status pin during reverse battery conditions.
July 1996
4
Rev 1.000
Philips Semiconductors
Product specification
PowerMOS transistor
TOPFET high side switch
DYNAMIC CHARACTERISTICS
T
mb
= 25 ˚C; V
BG
= 13 V
SYMBOL
-V
LG
PARAMETER
Inductive load turn-off
Negative load voltage
1
Short circuit load protection
2
Response time
Load current prior to turn-off
Overload protection
3
Load current limiting
CONDITIONS
V
IG
= 0 V; I
L
= 7.5 A; t
p
= 300
µs
V
IG
= 5 V; R
L
≤
10 mΩ
-
t < t
d sc
V
BL
= 9 V; t
p
= 300
µs
-
90
42
MIN.
15
BUK201-50Y
TYP.
20
MAX.
25
UNIT
V
µs
A
t
d sc
I
L
-
-
I
L(lim)
28
40
52
A
SWITCHING CHARACTERISTICS
T
mb
= 25 ˚C, V
BG
= 13 V, for resistive load R
L
= 13
Ω.
SYMBOL
t
d on
dV/dt
on
t
on
PARAMETER
During turn-on
Delay time
Rate of rise of load voltage
Total switching time
During turn-off
Delay time
Rate of fall of load voltage
Total switching time
CONDITIONS
to V
IG
= 5 V
to 10% V
L
-
-
-
16
1
40
-
2.5
-
µs
V/µs
µs
µs
V/µs
µs
MIN.
TYP.
MAX.
UNIT
to 90% V
L
to V
IG
= 0 V
to 90% V
L
to 10% V
L
t
d off
dV/dt
off
t
off
-
-
-
30
1.2
50
-
2.5
-
CAPACITANCES
T
mb
= 25 ˚C; f = 1 MHz; V
IG
= 0 V
SYMBOL
C
ig
C
bl
C
sg
PARAMETER
Input capacitance
Output capacitance
Status capacitance
CONDITIONS
V
BG
= 13 V
V
BL
= V
BG
= 13 V
V
SG
= 5 V
MIN.
-
-
-
TYP.
15
415
11
MAX.
20
580
15
UNIT
pF
pF
pF
1
For a high side switch, the load pin voltage goes negative with respect to ground during the turn-off of an inductive load. This negative voltage
is clamped by the device.
2
The load current is self-limited during the response time for short circuit load protection. Response time is measured from when input goes
high.
3
If the load resistance is low, but not a complete short circuit, such that the on-state voltage remains less than V
BL(TO)
, the device remains in
current limiting until the overtemperature protection operates.
July 1996
5
Rev 1.000
MCU
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