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BLL1214-250

Description
L-band radar LDMOS transistor
CategoryDiscrete semiconductor    The transistor   
File Size77KB,10 Pages
ManufacturerPhilips Semiconductors (NXP Semiconductors N.V.)
Websitehttps://www.nxp.com/
Download Datasheet Parametric View All

BLL1214-250 Overview

L-band radar LDMOS transistor

BLL1214-250 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerPhilips Semiconductors (NXP Semiconductors N.V.)
package instruction,
Reach Compliance Codeunknow
ConfigurationSingle
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-609 codee0
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)0.4 W
Terminal surfaceTin/Lead (Sn/Pb)
DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D379
BLL1214-250
L-band radar LDMOS transistor
Product specification
Supersedes data of 2002 Aug 06
2003 Aug 29
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