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3.0SMCJ6.5

Description
TVS DIODE, DO-214AB
Categorysemiconductor    Discrete semiconductor   
File Size900KB,4 Pages
ManufacturerYenyo Technology Co., Ltd.
Websitehttp://www.yenyo.com.tw/
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3.0SMCJ6.5 Overview

TVS DIODE, DO-214AB

YENYO
Surface Mount Transient Voltage Suppressor
Stand-off Voltage 5.0 to 220 V
Power Dissipation 3000 Watts
SMC/DO-214AB
3.0SMCJ SERIES
Features
For surfsce mounted applications
Reliable low cost construction utilizing
molded plastic technique
Plastic material has UL flammability
classification 94V-0
Typical IR less than 1uA above 10V
Fast response time: typically less than 1.0
ns for Uni-direction, less than 5.0ns for
Bi-direction, form 0Volts to BV min
Mechanical Data
Case: Molded plastic SMC/DO-214AB
Polarity:by cathode band denotes uni-
directional device none cathode band
denotes bi-directional device
Weight: 0.21 gram
.108(2.75)
.128(3.25)
.220(5.59)
.245(6.22)
.260(6.60)
.280(7.11)
.006(.152)
.012(.305)
.079(2.00)
.103(2.62)
.002(.051)
.008(.203)
.305(7.75)
.320(8.13)
.030(0.76)
.060(1.52)
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25
o
C
ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
PARAMTER
Peak Power Dissipation at T
A
=25 C
T
P
=1ms
(Note 1,2)
o
SYMBOL
VALUE
UNIT
P
PK
Minimum 3000
Watts
Peak Forward Surge Current, 8.3ms single
Half sine-wave super imposed on rated load
(Note 3)
(JEDEC method)
o
I
FSM
100
A
Steady State Power Dissipation at T
A
=75 C
Maximum lnstantaneous forward voltage
at 35A for unidirectional devices only (Note 3)
Operating Junction and Storage Temperature
Range
PM
(AV)
8.0
Watts
V
F
3.5
V
T
J
, T
STG
o
-55 to +150
o
C
NOTES : (1) Non-repetitive current pulse, per fig. 3 and derated above TA=25 C per fig. 1.
(2) Thermal Resistance junction to ambient.
(3) 8.3ms single half-sine wave duty cycle= 4pulses maximum per minute(unidirectional units only).
1/4
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