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BUK444-200A

Description
Aluminum Electrolytic Radial Lead High Ripple, Long Life Capacitor; Capacitance: 100uF; Voltage: 200V; Case Size: 16x20 mm; Packaging: Bulk
CategoryDiscrete semiconductor    The transistor   
File Size56KB,7 Pages
ManufacturerPhilips Semiconductors (NXP Semiconductors N.V.)
Websitehttps://www.nxp.com/
Download Datasheet Parametric Compare View All

BUK444-200A Overview

Aluminum Electrolytic Radial Lead High Ripple, Long Life Capacitor; Capacitance: 100uF; Voltage: 200V; Case Size: 16x20 mm; Packaging: Bulk

BUK444-200A Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerPhilips Semiconductors (NXP Semiconductors N.V.)
package instruction,
Reach Compliance Codeunknow
ConfigurationSingle
Maximum drain current (Abs) (ID)5.3 A
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-609 codee0
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)25 W
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Philips Semiconductors
Product Specification
PowerMOS transistor
BUK444-200A/B
GENERAL DESCRIPTION
N-channel enhancement mode
field-effect power transistor in a
plastic full-pack envelope.
The device is intended for use in
Switched Mode Power Supplies
(SMPS), motor control, welding,
DC/DC and AC/DC converters, and
in general purpose switching
applications.
QUICK REFERENCE DATA
SYMBOL
V
DS
I
D
P
tot
R
DS(ON)
PARAMETER
BUK444
Drain-source voltage
Drain current (DC)
Total power dissipation
Drain-source on-state
resistance
MAX.
-200A
200
5.3
25
0.4
MAX.
-200B
200
4.7
25
0.5
UNIT
V
A
W
PINNING - SOT186
PIN
1
2
3
gate
drain
source
DESCRIPTION
PIN CONFIGURATION
case
SYMBOL
d
g
case isolated
1 2 3
s
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL
V
DS
V
DGR
±V
GS
I
D
I
D
I
DM
P
tot
T
stg
T
j
PARAMETER
Drain-source voltage
Drain-gate voltage
Gate-source voltage
Drain current (DC)
Drain current (DC)
Drain current (pulse peak value)
Total power dissipation
Storage temperature
Junction Temperature
CONDITIONS
-
R
GS
= 20 kΩ
-
T
hs
= 25 ˚C
T
hs
= 100 ˚C
T
hs
= 25 ˚C
T
hs
= 25 ˚C
-
-
MIN.
-
-
-
-
-
-
-
- 55
-
-200A
5.3
3.3
21
25
150
150
MAX.
200
200
30
-200B
4.7
3.0
19
UNIT
V
V
V
A
A
A
W
˚C
˚C
THERMAL RESISTANCES
SYMBOL
R
th j-hs
R
th j-a
PARAMETER
Thermal resistance junction to
heatsink
Thermal resistance junction to
ambient
CONDITIONS
with heatsink compound
MIN.
-
-
TYP.
-
55
MAX.
5
-
UNIT
K/W
K/W
April 1993
1
Rev 1.100

BUK444-200A Related Products

BUK444-200A BUK444-200B
Description Aluminum Electrolytic Radial Lead High Ripple, Long Life Capacitor; Capacitance: 100uF; Voltage: 200V; Case Size: 16x20 mm; Packaging: Bulk Aluminum Electrolytic Radial Lead High Ripple, Long Life Capacitor; Capacitance: 100uF; Voltage: 200V; Case Size: 16x20 mm; Packaging: Bulk
Is it Rohs certified? incompatible incompatible
Maker Philips Semiconductors (NXP Semiconductors N.V.) Philips Semiconductors (NXP Semiconductors N.V.)
Reach Compliance Code unknow unknow
Configuration Single Single
Maximum drain current (Abs) (ID) 5.3 A 4.7 A
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-609 code e0 e0
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE
Maximum operating temperature 150 °C 150 °C
Polarity/channel type N-CHANNEL N-CHANNEL
Maximum power dissipation(Abs) 25 W 25 W
surface mount NO NO
Terminal surface Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
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