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BUK438W-800A

Description
RECTIFIER BRIDGE 8A 100V 200A-ifsm 1V-vf 5uA-ir GBU 20/TUBE
CategoryDiscrete semiconductor    The transistor   
File Size47KB,7 Pages
ManufacturerPhilips Semiconductors (NXP Semiconductors N.V.)
Websitehttps://www.nxp.com/
Download Datasheet Parametric Compare View All

BUK438W-800A Overview

RECTIFIER BRIDGE 8A 100V 200A-ifsm 1V-vf 5uA-ir GBU 20/TUBE

BUK438W-800A Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerPhilips Semiconductors (NXP Semiconductors N.V.)
package instruction,
Reach Compliance Codeunknow
ConfigurationSingle
Maximum drain current (Abs) (ID)7.6 A
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-609 codee0
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)220 W
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Philips Semiconductors
Product specification
PowerMOS transistor
BUK438W-800A/B
GENERAL DESCRIPTION
N-channel enhancement mode
field-effect power transistor in a
plastic envelope.
The device is intended for use in
Switched Mode Power Supplies
(SMPS), motor control, welding,
DC/DC and AC/DC converters, and
in general purpose switching
applications.
QUICK REFERENCE DATA
SYMBOL
V
DS
I
D
P
tot
R
DS(ON)
PARAMETER
BUK438
Drain-source voltage
Drain current (DC)
Total power dissipation
Drain-source on-state
resistance
MAX.
-800A
800
7.6
220
1.5
MAX.
-800B
800
6.6
220
2.0
UNIT
V
A
W
PINNING - SOT429 (TO247)
PIN
1
2
3
tab
gate
drain
source
drain
DESCRIPTION
PIN CONFIGURATION
SYMBOL
d
g
1
2
3
s
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL
V
DS
V
DGR
±V
GS
I
D
I
D
I
DM
P
tot
T
stg
T
j
PARAMETER
Drain-source voltage
Drain-gate voltage
Gate-source voltage
Drain current (DC)
Drain current (DC)
Drain current (pulse peak value)
Total power dissipation
Storage temperature
Junction temperature
CONDITIONS
-
R
GS
= 20 kΩ
-
T
mb
= 25 ˚C
T
mb
= 100 ˚C
T
mb
= 25 ˚C
T
mb
= 25 ˚C
-
-
MIN.
-
-
-
-
-
-
-
- 55
-
-800A
7.6
4.8
30
220
150
150
MAX.
800
800
30
-800B
6.6
4.1
26
UNIT
V
V
V
A
A
A
W
˚C
˚C
THERMAL RESISTANCES
SYMBOL
R
th j-mb
R
th j-a
PARAMETER
Thermal resistance junction to
mounting base
Thermal resistance junction to
ambient
CONDITIONS
MIN.
-
-
TYP.
-
45
MAX.
0.57
-
UNIT
K/W
K/W
February 1998
1
Rev 1.000

BUK438W-800A Related Products

BUK438W-800A BUK438-800A BUK438-800B BUK438W-800B
Description RECTIFIER BRIDGE 8A 100V 200A-ifsm 1V-vf 5uA-ir GBU 20/TUBE PowerMOS transistor PowerMOS transistor RECTIFIER BRIDGE 8A 200V 200A-ifsm 1V-vf 5uA-ir GBU 20/TUBE
Is it Rohs certified? incompatible incompatible incompatible incompatible
Maker Philips Semiconductors (NXP Semiconductors N.V.) Philips Semiconductors (NXP Semiconductors N.V.) Philips Semiconductors (NXP Semiconductors N.V.) Philips Semiconductors (NXP Semiconductors N.V.)
Reach Compliance Code unknow unknow unknow unknow
Configuration Single Single Single Single
Maximum drain current (Abs) (ID) 7.6 A 7.6 A 6.6 A 6.6 A
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-609 code e0 e0 e0 e0
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE
Maximum operating temperature 150 °C 150 °C 150 °C 150 °C
Polarity/channel type N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL
Maximum power dissipation(Abs) 220 W 220 W 220 W 220 W
surface mount NO NO NO NO
Terminal surface Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
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