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ACE4490M

Description
N-Channel 100-V MOSFET
File Size416KB,7 Pages
ManufacturerACE [ACE Technology Co., Ltd.]
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ACE4490M Overview

N-Channel 100-V MOSFET

ACE4490M
N-Channel 100-V MOSFET
Description
The ACE4490M uses advanced trench technology to provide excellent R
DS(ON)
and low gate charge. This
device is suitable for use as a load switch or in PWM applications. The source leads are separated to
allow a Kelvin connection to the source, which may be used to bypass the source inductance.
Features
Low r
DS
(on) trench technology
Low thermal impedance
Fast switching speed
Applications
PoE Power Sourcing Equipment
PoE Powered Devices
Telecom DC/DC converters
White LED boost converters
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous
Drain Current
a
Pulsed Drain Current
b
Continuous Source Current (Diode Conduction)
a
Power Dissipation
a
T
A
=25℃
T
A
=70℃
T
A
=25℃
T
A
=70℃
Symbol
V
DS
V
GS
I
D
I
DM
I
S
P
D
Limit
100
±20
5.2
4.4
50
3
3.1
2.2
Units
V
V
A
A
A
W
Operating temperature / storage temperature
T
J
/T
STG
-55~150
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
a
Symbol
t <= 10 sec
Steady State
R
θJA
Maximum
40
80
Units
°C/W
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
b. Pulse width limited by maximum junction temperature
VER 1.1
1
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