SMG16C60F
Thyristor
SMG16C60F
is designed for full wave AC control applications.
It can be used as an ON/OFF function or for phase control operation.
10.5±0.3
3.2±0.3
4.7±0.2
2.7±0.2
TO-220F
Typical Applications
9.7±0.3
Home Appliances : Electric Blankets, Starter for FL, other control applications
●
Industrial Use
: SMPS, Solenoid for Breakers, Motor Controls, Heater
Controls, other control applications
●
1
16.0±0.3
φ3.2
±0
.2
3
2.6±0.2
Features
0.60±0.15
13.0±0.5
1.1±0.2
3.0±0.3
1.4±0.2
I
T(AV)
=16A
●
High Surge Current
●
Low Voltage Drop
●
Lead-Free Package
●
2
1K
2A
3 Gate
0.6±0.15
1
2
3
2.54±0.25
5.08±0.5
Identifying Code：
S16C6F
Unit：
mm
■Maximum
Ratings
Symbol
V
RRM
V
RSM
V
DRM
I
T AV）
（
I
T RMS）
（
I
TSM
I
2
t
P
GM
（AV）
P
G
（Tj=25℃
unless otherwise specified）
Item
Repetitive Peak Reverse Voltage
Non-Repetitive Peak Reverse Voltage
Repetitive Peak Off-State Voltage
Average On-State Current
R.M.S. On-State Current
Surge On-State Current
I
2
t
Peak Gate Power Dissipation
Average Gate Power Dissipation
Peak Gate Current
Peak Gate Voltage
（Forward）
Peak Gate Voltage
（Reverse）
Isolation Breakdown（R.M.S.）
Operating Junction Temperature
Storage Temperature
Mass
A.C 1minute
Reference
Ratings
600
720
600
Unit
V
V
V
A
A
A
A
2
S
W
W
A
V
V
V
℃
℃
g
Single phase, half wave, 180°conduction, Tc＝58℃
,
Single phase, half wave, 180°conduction, Tc＝58℃
,
50Hz/60Hz,
1 2
cycle Peak value, non-repetitive
／
16
25.1
240
/
263
288
5
0.5
2
6
10
1500
−40∼＋125
−40∼＋150
2
I
FGM
V
FGM
V
RGM
V
ISO
Tj
Tstg
■Electrical
Characteristics
Symbol
I
DRM
I
RRM
V
TM
I
GT
V
GT
V
GD
I
H
（
Rth j-c
）
Item
Repetitive Peak Off-State Current
Repetitive Peak Reverse Current
Peak On-State Voltage
Gate Trigger Current
Gate Trigger Voltage
Non-Trigger Gate Voltage
Holding Current
Thermal Resistance
Reference
Tj＝125℃, V
D
＝V
DRM
,
Tj＝125℃, V
R
＝V
RRM
,
I
T
＝35A,
Inst. measurement
V
D
＝6V,
R
L
＝10Ω
Tj＝125℃, V
D
＝
1 2
V
DRM
,
／
Junction to case
Ratings
Min.
Typ.
Max.
2
2
1.5
30
1.4
0.2
15
3
Unit
mA
mA
V
mA
V
V
mA
℃
/
W
www.kersemi.com
SMG16C60F
１
０
Gate Characteristics
V
FGM
６
（ V）
P
GM
５
（ W）
１０
００
On-State Voltage Max
Ｔ= ５
½２ ℃
Ｔ= ２ ℃
½１ ５
（AV）
０
P
G
（ . W）
５
２℃
５
I
FGM
２
（ A）
１
On-State Current A）
（
１００
００
Gate Voltage
（V）
１０
０
１
０
V
GD
０２
（ . V）
０１
.
１
１
０
１０
０
１０
００
１
０５
.
１
１５
.
２
２５
.
３
３.
５
Gate Current mA）
（
On-State Voltage
（V）
２
５
Average On-State Current vs Power
Dissipation
（Single phase half wave）
θ１ ０
＝８゜
θ１ ０
＝２゜
θ９ ゜
＝０
１０
３
Average On-State Current vs Ambient
Temperature
（Single phase half wave）
０
π
θ
３０
６゜
2π
２
０
θ６ ゜
＝０
θ３ ゜
＝０
Ambient Temperature
（℃）
１０
２
１０
１
１０
０
９
０
８
０
７
０
６
０
５
０
４
０
０
２
４
６
θ３ ゜
＝０
Power Dissipation
（W）
θ Conduction Angle
：
１
５
１
０
０
π
θ
３０
６゜
2π
５
０
０
θ Conduction Angle
：
θ ６ ゜ θ９ ゜ θ １ ０
＝０
＝０
＝２゜
θ１ ０
＝８゜
２
４
６
８
１
０
１
２
１
４
１
６
１
８
８
１
０
１
２
１
４
１
６
１
８
Average On-State Current
（A）
Average On-State Current
（A）
３０
０
Transient Thermal Impedance
（℃／W）
Surge On-State Current Rating
（Non-Repetitive）
１
０
Maximum Transient Thermal
Impedance Characteristics
Surge On-State Current A）
（
２０
５
２０
０
１０
５
１０
０
５
０
０
１
６ Hz
０
５ Hz
０
１
１
０
１０
０
０１
.
００
.１
０１
.
１
１
０
１０
０
Time
（Cycles）
Time
（sec.）
１０
００
I
GT
−Tj
［Change Rate½
（Typical）
Gate Trigger Voltage
（V）
１
０９
.
０８
.
０７
.
０６
.
０５
.
０４
.
０３
.
０２
.
V
GT
−Tj
（Typical）
I
GT
（t℃）
×100
（％）
I
GT
２ ℃）
（ ５
１０
０
１
０
−０
５
−５
２
０
２
５
５
０
７
５
１０
０
１５
２
０１
.
０
−０
５
−５
２
０
２
５
５
０
７
５
１０
０
１５
２
Junction Temp.
（℃）
Junction Temp.
（℃）
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