TN8, TS8 and TYNx08 Series
8A SCRs
MAIN FEATURES:
Symbol
I
T(RMS)
V
DRM
/V
RRM
I
GT
Value
8
600 to 1000
0.2 to 15
Unit
G
A
A
K
V
mA
K A
G
A
A
DESCRIPTION
Available either in sensitive (TS8) or standard
(TN8 / TYN) gate triggering levels, the 8A SCR
series is suitable to fit all modes of control, found
in applications such as overvoltage crowbar
protection, motor control circuits in power tools
and kitchen aids, inrush current limiting circuits,
capacitive discharge ignition and voltage
regulation circuits...
Available in through-hole or surface-mount
packages, they provide an optimized performance
in a limited space area.
ABSOLUTE RATINGS
(limiting values)
Symbol
I
T(RMS)
IT
(AV)
Parameter
RMS on-state current (180° conduction angle)
Average on-state current (180° conduction angle)
K
DPAK
(TS8-B)
(TN8-B)
A
A
G
IPAK
(TS8-H)
(TN8-H)
A
K
A
K
G
A
G
TO-220AB
(TS8-T)
TO-220AB
(TYNx)
Value
Tc = 110°C
Tc = 110°C
8
5
TS8/TN8
TYN
100
95
45
Unit
A
A
I
TSM
Non repetitive surge peak on-state
current
I
²
t Value for fusing
Critical rate of rise of on-state current
I
G
= 2 x I
GT
, tr
≤
100 ns
Peak gate current
Average gate power dissipation
Storage junction temperature range
Operating junction temperature range
tp = 8.3 ms
tp = 10 ms
tp = 10 ms
F = 60 Hz
tp = 20 µs
Tj = 25°C
Tj = 25°C
Tj = 125°C
Tj = 125°C
Tj = 125°C
73
70
24.5
50
4
1
A
A
2
S
A/µs
A
W
°C
V
I
²
t
dI/dt
I
GM
P
G(AV)
T
stg
Tj
V
RGM
- 40 to + 150
- 40 to + 125
5
Maximum peak reverse gate voltage (for TN8 & TYN only)
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TN8, TS8 and TYNx08 Series
ELECTRICAL CHARACTERISTICS
(Tj = 25°C, unless otherwise specified)
s
SENSITIVE
Symbol
I
GT
V
GT
V
GD
V
RG
I
H
I
L
dV/dt
V
TM
V
t0
R
d
I
DRM
I
RRM
V
D
= V
DRM
I
RG
= 10
µA
I
T
= 50 mA
I
G
= 1 mA
I
TM
= 16 A
R
GK
= 1 kΩ
R
GK
= 1 kΩ
R
GK
= 220
Ω
Tj = 125°C
Tj = 25°C
Tj = 125°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
tp = 380 µs
R
L
= 3.3 kΩ
R
GK
= 220
Ω
Tj = 125°C
V
D
= 12 V
R
L
= 140
Ω
Test Conditions
MAX.
MAX.
MIN.
MIN.
MAX.
MAX.
MIN.
MAX.
MAX.
MAX.
MAX.
TS820
200
0.8
0.1
8
5
6
5
1.6
0.85
46
5
1
Unit
µA
V
V
V
mA
mA
V/µs
V
V
mΩ
µA
mA
V
D
= 65 % V
DRM
Threshold voltage
Dynamic resistance
V
DRM
= V
RRM
R
GK
= 220
Ω
s
STANDARD
Symbol
I
GT
V
D
= 12 V
V
GT
V
GD
I
H
I
L
dV/dt
V
TM
V
t0
R
d
I
DRM
I
RRM
V
D
= V
DRM
I
T
= 100 mA
I
G
= 1.2 I
GT
V
D
= 67 % V
DRM
I
TM
= 16 A
Gate open
Tj = 125°C
Tj = 25°C
Tj = 125°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
R
L
= 3.3 kΩ
Gate open
Tj = 125°C
R
L
= 33
Ω
Test Conditions
MIN.
MAX.
MAX.
MIN.
MAX.
MAX.
MIN.
MAX.
MAX.
MAX.
MAX.
25
30
50
TN805 TN815 TYNx08
0.5
5
2
15
1.3
0.2
40
50
150
1.6
0.85
46
5
2
30
70
150
2
15
V
V
mA
mA
V/µs
V
V
mΩ
µA
mA
Unit
mA
tp = 380 µs
Threshold voltage
Dynamic resistance
V
DRM
= V
RRM
THERMAL RESISTANCES
Symbol
R
th(j-c)
R
th(j-a)
Junction to case (DC)
Junction to ambient (DC)
S = 0.5 cm
²
S= copper surface under tab
Parameter
Value
20
TO-220AB
IPAK
DPAK
60
100
70
Unit
°C/W
°C/W
2/9
/T
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TN8, TS8 and TYNx08 Series
PRODUCT SELECTOR
Voltage (xxx)
Part Number
600 V
TN805-xxxB
TN805-xxxH
TN815-xxxB
TN815-xxxH
TS820-xxxB
TS820-xxxH
TS820-xxxT
TYNx08
X
X
X
X
X
X
X
X
X
X
X
X
X
700 V
800 V
X
X
X
X
1000 V
5 mA
5 mA
15 mA
15 mA
0.2 mA
0.2 mA
0.2 mA
15 mA
DPAK
IPAK
DPAK
IPAK
DPAK
IPAK
TO-220AB
TO-220AB
Sensitivity
Package
ORDERING INFORMATION
TN
STANDARD
SCR
SERIES
CURRENT: 8A
8
05
-
600
B (-TR)
PACKAGE:
B: DPAK
H: IPAK
PACKING MODE:
Blank: Tube
-TR: DPAK Tape & Reel
SENSITIVITY:
05: 5mA
15: 15mA
VOLTAGE:
600: 600V
800: 800V
TS
SENSITIVE
SCR
SERIES
CURRENT: 8A
8 20 -
600 B (-TR)
PACKAGE:
B: DPAK
H: IPAK
T: TO-220AB
PACKING MODE:
Blank: Tube
-TR: DPAK Tape & Reel
SENSITIVITY:
20: 200µA
VOLTAGE:
600: 600V
700: 700V
TYN
STANDARD
SCR
SERIES
VOLTAGE:
6: 600V
8: 800V
10: 1000V
6
08
(RG)
PACKING MODE
Blank: Bulk
RG: Tube
CURRENT: 8A
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TN8, TS8 and TYNx08 Series
OTHER INFORMATION
Part Number
TN805-x00B
TN805-x00B-TR
TN805-x00H
TN815-x00B
TN815-x00B-TR
TN815-x00H
TS820-x00B
TS820-x00B-TR
TS820-x00H
TS820-x00T
TYNx08
TYNx08RG
Note:
x = voltage
Marking
TN805x00
TN805x00
TN805x00
TN815x00
TN815x00
TN815x00
TS820x00
TS820x00
TS820x00
TS820x00T
TYNx08
TYNx08
Weight
0.3 g
0.3 g
0.4 g
0.3 g
0.3 g
0.4 g
0.3 g
0.3 g
0.4 g
2.3 g
2.3 g
2.3 g
Base Quantity
75
2500
75
75
2500
75
75
2500
75
50
250
50
Packing mode
Tube
Tape & reel
Tube
Tube
Tape & reel
Tube
Tube
Tape & reel
Tube
Tube
Bulk
Tube
Fig. 1:
Maximum average power dissipation
versus average on-state current.
P(W)
8
7
6
5
4
3
2
1
0
0
1
2
IT(av)(A)
3
4
α
360°
Fig. 2-1:
Average and D.C. on-state current
versus case temperature.
IT(av)(A)
10.0
9.0
8.0
7.0
6.0
5.0
4.0
3.0
2.0
1.0
0.0
α
= 180°
DC
α
= 180°
Tcase(°C)
0
25
50
75
100
125
5
6
Fig. 2-2:
Average and D.C. on-state current
versus ambient temperature (device mounted on
FR4 with recommended pad layout) (DPAK).
IT(av)(A)
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
Fig. 3-1:
Relative variation of thermal impedance
junction to case versus pulse duration.
K = [Zth(j-c)/Rth(j-c)]
1.0
DC
α
=180°
0.5
0.2
Tamb(°C)
0
25
50
75
100
125
0.1
1E-3
1E-2
tp(s)
1E-1
1E+0
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TN8, TS8 and TYNx08 Series
Fig. 3-2:
Relative variation of thermal impedance
junction to ambient versus pulse duration
(recommended pad layout, FR4 PC board for
DPAK).
K = [Zth(j-a)/Rth(j-a)]
1.00
Fig. 4-1:
Relative variation of gate trigger current
and holding current versus junction temperature
for TS8 series.
IGT,IH,IL [Tj] / IGT ,IH,IL [Tj = 25 °C]
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
-40
IGT
DPAK
0.10
TO-220AB
IH & IL
Rgk = 1k
Ω
tp(s)
0.01
1E-2
1E-1
1E+0
1E+1
1E+2
5E+2
Tj(°C)
-20
0
20
40
60
80
100
120
140
Fig. 4-2:
Relative variation of gate trigger current
and holding current versus junction temperature
for TN8 & TYN series.
IGT,IH,IL [Tj] / IGT ,IH,IL [Tj = 25 °C]
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
-40
Fig. 5:
Relative variation of holding current
versus gate-cathode resistance (typical values)
for TS8 series.
IH[Rgk] / IH[Rgk = 1k
Ω
]
IGT
IH & IL
Tj(°C)
-20
0
20
40
60
80
100
120
140
Rgk(k
Ω
)
Fig. 6:
Relative variation of dV/dt immunity
versus gate-cathode resistance (typical values)
for TS8 series.
dV/dt[Rgk] / dV/dt [Rgk = 220
Ω
]
Fig. 7:
Relative variation of dV/dt immunity
versus gate-cathode capacitance (typical values)
for TS8 series.
15.0
12.5
10.0
7.5
5.0
dV/dt[Cgk] / dV/dt [Rgk = 220
Ω]
VD = 0.67 x VDRM
Tj = 125°C
Rgk = 220
Ω
Rgk(k
Ω
)
2.5
Cgk(nF)
0.0
0
20
40
60
80 100 120 140 160 180 200 220
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