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P2500B

Description
25 A, 200 V, SILICON, RECTIFIER DIODE
CategoryDiscrete semiconductor    diode   
File Size133KB,2 Pages
ManufacturerDIOTEC
Websitehttp://www.diotec.com/
Environmental Compliance
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P2500B Overview

25 A, 200 V, SILICON, RECTIFIER DIODE

P2500B Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerDIOTEC
Reach Compliance Codecompli
applicationGENERAL PURPOSE
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1.1 V
JESD-30 codeO-PALF-W2
Maximum non-repetitive peak forward current550 A
Number of components1
Phase1
Number of terminals2
Maximum operating temperature175 °C
Minimum operating temperature-50 °C
Maximum output current25 A
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formLONG FORM
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Maximum repetitive peak reverse voltage100 V
Maximum reverse current10 µA
Maximum reverse recovery time1.5 µs
surface mountNO
Terminal formWIRE
Terminal locationAXIAL
Maximum time at peak reflow temperatureNOT SPECIFIED
P2500A ... P2500M
P2500A ... P2500M
Standard Recovery Rectifier Diodes
Gleichrichterdioden mit Standard-Sperrverzug
Version 2015-11-04
Ø 8 x 7.5 (~P600)
Typical Application
50/60 Hz Mains Rectification,
Power Supplies, Polarity Protection
Commercial grade
1
)
±0.1
I
FAV
= 25 A
V
RRM
= 50...1000 V
V
F
< 0.87 V I
FSM
= 500/550 A
T
jmax
= 175 °C t
rr
~ 1500 ns
Typische Anwendung
50/60 Hz Netzgleichrichtung,
Stromversorgungen, Verpolschutz
Standardausführung
1
)
Besonderheit
Gehäuse kleiner als Industrie-
standard
Niedrige Fluss-Spannung
Hohe Stoßstromfestigkeit
Konform zu RoHS, REACH,
Konfliktmineralien
1
)
Mechanische Daten
1
)
500
1.7 g
Gegurtet in Ammo-Pack
Gewicht ca.
Gehäusematerial
Löt- und Einbaubedingungen
Ø8
Features
Package smaller than industry
standard
Low forward voltage drop
High forward surge current
Compliant to RoHS, REACH,
Conflict Minerals
1
)
Mechanical Data
1
)
Taped in ammo pack
Weight approx.
Case material
Solder & assembly conditions
±0.5
Type
7.5
±0.1
62.5
RoHS
Ø 1.2
±0.05
UL 94V-0
260°C/10s
MSL N/A
Dimensions - Maße [mm]
Maximum ratings
2
)
Type
Typ
P2500A
P2500B
P2500D
P2500G
P2500J
P2500K
P2500M
Repetitive peak reverse voltage
Periodische Spitzensperrspannung
V
RRM
[V]
50
100
200
400
600
800
1000
EL
V
Pb
EE
WE
Grenzwerte
2
)
Surge peak reverse voltage
Stoßspitzensperrspannung
V
RSM
[V]
50
100
200
400
600
800
1000
Max. average forward rectified current, R-load
Dauergrenzstrom in Einwegschaltung mit R-Last
Repetitive peak forward current
Periodischer Spitzenstrom
Peak forward surge current, 50/60 Hz half sine-wave
Stoßstrom für eine 50/60 Hz Sinus-Halbwelle
Rating for fusing, t < 10 ms
Grenzlastintegral, t < 10 ms
Junction temperature – Sperrschichttemperatur
Storage temperature – Lagerungstemperatur
T
A
= 50°C
f > 15 Hz
T
A
= 25°C
T
A
= 25°C
I
FAV
I
FRM
I
FSM
i
2
t
T
j
T
S
25 A
3
)
100 A
3
)
500/550 A
1250 A
2
s
-50...+175°C
-50...+175°C
1
2
3
Please note the
detailed information on our website
or at the beginning of the data book
Bitte beachten Sie die
detaillierten Hinweise auf unserer Internetseite
bzw. am Anfang des Datenbuches
T
j
= 25°C unless otherwise specified – T
j
= 25°C wenn nicht anders angegeben
Valid, if leads are kept at ambient temperature at a distance of 10 mm from case
Gültig, wenn die Anschlussdrähte in 10 mm Abstand vom Gehäuse auf Umgebungstemperatur gehalten werden
http://www.diotec.com/
© Diotec Semiconductor AG
1

P2500B Related Products

P2500B P2500A_15 P2500D P2500G P2500J P2500K P2500M
Description 25 A, 200 V, SILICON, RECTIFIER DIODE 25 A, 200 V, SILICON, RECTIFIER DIODE 25 A, 200 V, SILICON, RECTIFIER DIODE 25 A, 400 V, SILICON, RECTIFIER DIODE 25 A, 200 V, SILICON, RECTIFIER DIODE 25 A, 800 V, SILICON, RECTIFIER DIODE 25 A, 1000 V, SILICON, RECTIFIER DIODE
Is it Rohs certified? conform to - conform to - conform to conform to conform to
Maker DIOTEC - DIOTEC - DIOTEC DIOTEC DIOTEC
Reach Compliance Code compli - compli - compli compli compli
application GENERAL PURPOSE - GENERAL PURPOSE - GENERAL PURPOSE GENERAL PURPOSE GENERAL PURPOSE
Shell connection ISOLATED - ISOLATED - ISOLATED ISOLATED ISOLATED
Configuration SINGLE - SINGLE - SINGLE SINGLE SINGLE
Diode component materials SILICON - SILICON - SILICON SILICON SILICON
Diode type RECTIFIER DIODE - RECTIFIER DIODE - RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE
Maximum forward voltage (VF) 1.1 V - 1.1 V - 1.1 V 1.1 V 1.1 V
JESD-30 code O-PALF-W2 - O-PALF-W2 - O-PALF-W2 O-PALF-W2 O-PALF-W2
Maximum non-repetitive peak forward current 550 A - 550 A - 550 A 550 A 550 A
Number of components 1 - 1 - 1 1 1
Phase 1 - 1 - 1 1 1
Number of terminals 2 - 2 - 2 2 2
Maximum operating temperature 175 °C - 175 °C - 175 °C 175 °C 175 °C
Minimum operating temperature -50 °C - -50 °C - -50 °C -50 °C -50 °C
Maximum output current 25 A - 25 A - 25 A 25 A 25 A
Package body material PLASTIC/EPOXY - PLASTIC/EPOXY - PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape ROUND - ROUND - ROUND ROUND ROUND
Package form LONG FORM - LONG FORM - LONG FORM LONG FORM LONG FORM
Peak Reflow Temperature (Celsius) NOT SPECIFIED - NOT SPECIFIED - NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
Maximum repetitive peak reverse voltage 100 V - 200 V - 600 V 800 V 1000 V
Maximum reverse current 10 µA - 10 µA - 10 µA 10 µA 10 µA
Maximum reverse recovery time 1.5 µs - 1.5 µs - 1.5 µs 1.5 µs 1.5 µs
surface mount NO - NO - NO NO NO
Terminal form WIRE - WIRE - WIRE WIRE WIRE
Terminal location AXIAL - AXIAL - AXIAL AXIAL AXIAL
Maximum time at peak reflow temperature NOT SPECIFIED - NOT SPECIFIED - NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
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