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S29CL016J0PBAM022

Description
Flash, 512KX32, 54ns, PBGA80, FBGA-80
Categorystorage    storage   
File Size1MB,74 Pages
ManufacturerCypress Semiconductor
Download Datasheet Parametric View All

S29CL016J0PBAM022 Overview

Flash, 512KX32, 54ns, PBGA80, FBGA-80

S29CL016J0PBAM022 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
Objectid8004812923
package instructionFBGA-80
Reach Compliance Codecompliant
ECCN codeEAR99
Maximum access time54 ns
startup blockTOP
command user interfaceYES
Universal Flash InterfaceYES
Data pollingYES
JESD-30 codeR-PBGA-B80
length11 mm
memory density16777216 bit
Memory IC TypeFLASH
memory width32
Number of functions1
Number of departments/size16,30
Number of terminals80
word count524288 words
character code512000
Operating modeSYNCHRONOUS
Maximum operating temperature125 °C
Minimum operating temperature-40 °C
organize512KX32
Package body materialPLASTIC/EPOXY
encapsulated codeLBGA
Encapsulate equivalent codeBGA80,8X10,40
Package shapeRECTANGULAR
Package formGRID ARRAY, LOW PROFILE
Parallel/SerialPARALLEL
power supply1.8/3.3,3.3 V
Programming voltage2.7 V
Certification statusNot Qualified
ready/busyYES
Maximum seat height1.4 mm
Department size2K,16K
Maximum standby current0.00006 A
Maximum slew rate0.09 mA
Maximum supply voltage (Vsup)3.6 V
Minimum supply voltage (Vsup)3 V
Nominal supply voltage (Vsup)3.3 V
surface mountYES
technologyCMOS
Temperature levelAUTOMOTIVE
Terminal formBALL
Terminal pitch1 mm
Terminal locationBOTTOM
switch bitYES
typeNOR TYPE
width9 mm
S29CD032J
S29CD016J
S29CL032J
S29CL016J
32/16 Mbit, 2.6/3.3 V, Dual Boot,
Simultaneous Read/Write, Burst Flash
General Description
The Cypress S29CD-J and S29CL-J devices are Floating Gate products fabricated in 110-nm process technology. These burst-
mode Flash devices are capable of performing simultaneous read and write operations with zero latency on two separate banks,
using separate data and address pins. These products can operate up to 75 MHz (32 Mb) or 66 MHz (16 Mb), and use a single V
CC
of 2.5V to 2.75V (S29CD-J) or 3.0V to 3.6V (S29CL-J) that make them ideal for today’s demanding automotive applications.
Distinctive Characteristics
Single 2.6V (S29CD-J) or 3.3V (S29CL-J) for read/program/
erase
110 nm Floating Gate Technology
Simultaneous Read/Write operation with zero latency
x32 Data Bus
Dual Boot Sector Configuration (top and bottom)
Flexible Sector Architecture
– CD016J and CL016J: Eight 2k Double word, Thirty 16k
Double word, and Eight 2k Double Word sectors
– CD032J and CL032J: Eight 2k Double word, Sixty-two 16k
Double Word, and Eight 2k Double Word sectors
VersatileI/O™ control (1.65V to 3.6V)
Programmable Burst Interface
– Linear for 2, 4, and 8 double word burst with wrap around
Secured Silicon Sector that can be either factory or
customer locked
20 year data retention (typical)
Cycling Endurance: 1 million write cycles per sector (typical)
Command set compatible with JEDEC (JC42.4) standard
Supports Common Flash Interface (CFI)
Extended Temperature range
Persistent and Password methods of Advanced Sector
Protection
Unlock Bypass program command to reduce programming
time
ACC input pin to reduce factory programming time
Data Polling bits indicate program and erase operation
completion
Hardware (WP#) protection of two outermost sectors in the
large bank
Ready/Busy (RY/BY#) output indicates data available to
system
Suspend and Resume commands for Program and Erase
Operation
Offered Packages
– 80-pin PQFP
– 80-ball Fortified BGA (13 x 11 mm and 11 x 9mm versions)
– Pb-free package option available
– Known Good Die
Cypress Semiconductor Corporation
Document Number: 002-00948 Rev. *C
198 Champion Court
San Jose
,
CA 95134-1709
408-943-2600
Revised November 08, 2017
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