High-Speed Analog
N-Channel DMOS FETs
Improved On -Resistance
SD310 / SD312 / SD314
FEATURES
DESCRIPTION
CORPORATION
•
High Input to Output Isolation . . . . . . . . . . . . . . . . 120dB
•
Low On Resistance . . . . . . . . . . . . . . . . . 15 Ohms @ 15V
Feedthrough
•
Low Capacitance: and Feedback Transients
Low
•
•
•
The Calogic SD310 is a 30V analog switch driver without a
built-in protection diode from gate to substrate for use with
SD312 and SD314 DMOS analog switches.
The SD312 is a high performance, high-speed, high-voltage,
and low resistance analog switch capable of switching
±5V
signals. The maximum threshold of 2V permits simple direct
TTL an CMOS driving for small applications.
The SD314 is DMOS analog switch capable of switching
±10V
analog signals with all other parameters identical to
those of SD312.
All three devices are manufactured with an implanted
high-speed, high-voltage, and low resistance double-diffused
MOS (DMOS) process. SD310, SD312 and SD314 devices
also have no built-in protection diode to enhance performance
in high impedance circuits. The devices are available in
4-lead hermetic TO-72 package and in die form for hybrid
applications. Custom devices based on SD310, SD312 and
SD314 can also be ordered.
ORDERING INFORMATION
Part
SD310DE
SD312DE
SD314DE
XSD310
XSD312
XSD314
Package
Hermetic TO-72 Package
Hermetic TO-72 Package
Hermetic TO-72 Package
Sorted Chips in Carriers
Sorted Chips in Carriers
Sorted Chips in Carriers
Temperature Range
-55
o
C to +125
o
C
-55
o
C to +125
o
C
-55
o
C to +125
o
C
-55
o
C to +125
o
C
-55
o
C to +125
o
C
-55
o
C to +125
o
C
—
Input (Gate) . . . . . . . . . . . . . . . . . . . . . . . . . . 2.4pF typ.
—
Output . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.3pF typ.
—
Feedback . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.3pF typ.
No Protection Diode from Gate to Substrate for very
high impedance applications
Maximum Gate Voltage . . . . . . . . . . . . . . . . . . . . . . .
±40V
APPLICATIONS
SD310:
Analog Switch Driver
•
SD312 and SD314:
•
Analog Switches Switches
•
High-Speed Digital
•
Multiplexers
Converters
•
A to D Converters
D to A
•
•
Choppers
•
Sample & Hold
SCHEMATIC DIAGRAM (Top View)
BODY
AND
CASE
SOURCE
1
4
TO-72
DRAIN
2
3
GATE
G
C
D
S
Body is internally connected to the case
CD10-2
SD310 / SD312 / SD314
CORPORATION
ABSOLUTE MAXIMUM RATINGS
Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50mA
Total Device Dissipation at 25
o
C Case Temperature . . . 1.2W
Storage Temperature Range . . . . . . . . . . . . . . -65
o
to +200
o
C
Lead Temperature (1/16" from case for 10 sec.). . . . . . 300
o
C
Operating Temperature Range . . . . . . . . . . . -55
o
C to +125
o
C
PARAMETER
V
DS
V
SD
V
DB
V
SB
V
GS
V
GB
V
GD
Drain-to-source
Source-to-drain*
Drain-to-body
Source-to-body
Gate-to-source
Gate-to-body
Gate-to-drain
SD310 SD312 SD314
+30
+10
+30
+15
±40
±40
±40
+10
+10
+15
+15
±40
±40
±40
+20
+20
+25
+25
±40
±40
±40
UNIT
V
dc
V
dc
V
dc
V
dc
V
dc
V
dc
V
dc
DC ELECTRICAL CHARACTERISTICS
(T
A
= 25
o
C, unless other specified.)
SYMBOL
PARAMETER
SD310
SD312
SD314
UNITS
TEST CONDITIONS
MIN TYP MAX MIN TYP MAX MIN TYP MAX
BREAKDOWN VOLTAGE
BV
DS
BV
SD
BV
DB
BV
SB
Drain-to-source
Source-to drain
Drain-to-body
Source-to-body
30
10
10
15
15
35
25
10
10
15
15
25
20
20
25
25
25
V
V
GS
= V
BS
= 0V, I
D
= 10µA
V
GS
= V
BS
= -5V, I
S
= 10nA
V
GD
= V
BD
= -5V, I
D
= 10nA
V
GB
= 0V, source OPEN, I
D
= 10nA
V
GB
= 0V, drain OPEN, I
S
= 10µA
LEAKAGE CURRENT
I
DS
(OFF)
Drain-to-source
1
10
1
10
1
I
SD
(OFF)
I
GBS
V
T
Source-to-drain
Gate
Threshold voltage
Drain-to-source
resistance
0.5
1.0
30
r
DS
(ON)
20
15
1
10
1
10
1
0.1
2.0
50
35
25
0.5
1.0
30
20
15
0.1
2.0
50
35
0.5
1.0
30
20
15
10
0.1
2.0
50
35
Ω
V
10
nA
V
GS
= V
BS
= -5V, V
DS
= +10V
V
GS
= V
BS
= -5V, V
DS
= +20V
V
GS
= V
BD
= -5V, V
SD
= +10V
V
GS
= V
BD
= -5V, V
SD
= +20V
V
DB
= V
SB
= 0V, V
GS
=
±40V
V
DS
= V
GS
= V
T
, I
S
= 1µA, V
SB
= 0V
I
D
= 1.0mA, V
SB
= 0, V
GS
= +5V
I
D
= 1.0mA, V
SB
= 0, V
GS
= +10V
I
D
= 1.0mA, V
SB
= 0, V
GS
= +15V
AC ELECTRICAL CHARACTERISTICS
SYMBOL
PARAMETER
Forward
transconductance
SD310
SD312
SD314
UNITS
TEST CONDITIONS
V
DS
= 10V, V
SB
= 0V, I
D
= 20mA,
f = 1kHz
MIN TYP MAX MIN TYP MAX MIN TYP MAX
gfs
15
20
15
20
15
20
mmhos
SMALL SIGNAL CAPACITANCES (See capacitance model)
C
(GS+GD+GB)
C
(GD+DB)
C
(GS+SB)
C
DG
Gate node
Drain node
Source node
Reverse transfer
2.4
1.3
3.5
0.3
3.7
1.7
4.5
0.7
2.4
1.3
3.5
0.3
3.7
1.7
4.5
0.7
2.4
1.3
3.5
0.3
3.7
1.7
4.5
0.7
pF
V
DS
= 10V, f = 1MHz
V
GS
= V
BS
= -15V
Embedded System
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