Anti-Sulfurated Thick Film Chip Resistors
( RMS series standard )
5.1 Derating Curve :
Document No.
TRMS-XX0S001A
Revise Date
page number
2011/02/09
4/12
For resistors operated at ambient temperature over 70℃ , power rating shall be derated in
accordance with figure 1.
P max.
100
Power ratio ( % )
50
0
-55
50
70
100
155
Ambient
Figure 1
Temp. (
C
)
5.2 Rated Voltage:
The rated voltage is calculated by the following formula:
E=
P*R
E=
Rated Voltage(V)
P=
Rated Power(W)
R=
Resistance Value
(Ω)
E.G. : What is RMS06JT102 the rated voltage ?
RMS06JT102 P:1/10W
E=
0.1(W) * 1000(Ω)
;
R:102 = 1KΩ = 1000Ω
= 10 (V)
TA-I TECHNOLOGY CO., LTD
Anti-Sulfurated Thick Film Chip Resistors
( RMS series standard )
6. Reliability Tests:
Test Items
Reference standard
-At
Document No.
TRMS-XX0S001A
Revise Date
page number
2011/02/09
5/12
Condition of Test
+25/–55 °C and +25/+125 °C
Test Limits
△R
Refer 5.0
±(1%
+ 0.05Ω )
Remarks :
0402 :
±(2%
+ 0.1Ω )
Temperature Coefficient
IEC 60115-1 4.8
of Resistance
Short Time Overload
IEC60115-1 4.13
2.5 X rated voltage for 5 sec
High Temperature
Exposure (Storage)
AEC-Q200-REV C-Test 3
MIL-STD-202 Method 108
1000 hrs. @ T=125°C. Unpowered.
Measurement at 24±2 hours after test
conclusion.
1%:±(1.0%+0.05Ω)
2%,5%:±(2.0%+0.1Ω)
Moisture Resistance
AEC-Q200-REV C-Test 6
MIL-STD-202 Method 106
T=24 hours / Cycle ,10Cycles . Notes : 1%:±(1.0%+0.05Ω)
Steps 7a& 7b not required. Unpowered . 2%,5%:±(2.0%+0.1Ω)
Biased Humidity
AEC-Q200-REV C-Test 7
MIL-STD-202 Method 103
1000 hours 85°C/85%RH. Note: Specified
conditions: 10% of operating power(not
exceeding max working voltage).
Measurement at 24±2 hours after test
conclusion.
1000 hours TA=70°C at rated power.
Measurement at 24±2 hours after test
conclusion.
Electrical test not required.
Inspect device construction, marking and
workmanship.
Verify physical dimensions to the
applicable device detail specification. Note:
User(s) and Suppliers spec. Electrical test
not required.
±(3%
+ 0.1Ω )
Operational Life
AEC-Q200-REV C-Test 8
MIL-STD-202 Method 108
1%:
±(1%
+ 0.1Ω )
2%.5% :
±(3%
+ 0.1Ω )
External Visual
AEC-Q200-REV C-Test 9
MIL-STD-883 Method 2009
Physical
Dimension
AEC-Q200-REV C-Test 10
JESD22 Method JB-100
Resistance to
Solvents
AEC-Q200-REV C-Test 12
MIL-STD-202 Method 215
a:Isopropyl Alcohpl：Mineral Spirits= 1：3
b:Terpene Defluxer (Bioact EC-7R)
Marking and protective layer
c:Deionized water
：Propylene
Glycol
can not be detached
Monomethyl Ether：monoethanolamine
= 42：1：1
Mechanical Shock
Vibration
AEC-Q200-REV C-Test 13
MIL-STD-202 Method 213
AEC-Q200-REV C-Test 14
MIL-STD-202 Method 204
Wave Form : Tolerance for half sine shock
±(1%
+ 0.1Ω )
pluse. Peak value is 100g’s. Normal
duration(D) is 6(ms)
5 g's for 20 min., 12 cycles each of 3
orientations. Note: Test from 10-2000 Hz.
±(1%
+ 0.1Ω )
Resistance to Soldering
AEC-Q200-REV C-Test 15
MIL-STD-202 Method 210
Heat
Condition B :
1% :
±(0.5%
+ 0.05Ω )
Immerse the specimens in and eutectic
2%.5% :
±(1%
+ 0.1Ω )
solder at 260±5℃ for 10±1S .
Thermal Shock
-
55C/+155C. Note: Number of cycles
AEC-Q200-REV C-Test 16
MIL-STD-202 Method 107
required-300, Maximum transfer time-20
seconds, Dwell time-15 minutes. Air-Air.
±(1%
+ 0.1Ω )
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MCU
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