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UF1G

Description
1 A, 400 V, SILICON, SIGNAL DIODE, DO-214AA
Categorysemiconductor    Discrete semiconductor   
File Size229KB,2 Pages
ManufacturerSHUNYE
Websitehttp://www.shunyegroup.com.cn/
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UF1G Overview

1 A, 400 V, SILICON, SIGNAL DIODE, DO-214AA

UF1A THRU UF1M
SURFACE MOUNT ULTRA FAST RE RECTIFIER
Reverse Voltage -
50 to 1000 Volts
DO-214AA
Forward Current -
1.0 Ampere
FEATURES
0.086 (2.20)
0.077 (1.95)
0.155(3.94)
0.130(3.30)
0.180(4.57)
0.160(4.06)
The plastic package carries Underwriters Laboratory
Flammability Classification 94V-0
For surface mounted applications
Ultra fast switching for high efficiency
Low reverse leakage
Built-in strain relief,ideal for automated placement
High forward surge current capability
High temperature soldering guaranteed:
250 C/10 seconds at terminals
0.012(0.305)
0.006(0.152)
0.122(3.12)
0.110(2.82)
MECHANICAL DATA
Case:
JEDEC DO-214AC molded plastic body
Terminals:
Plated axial leads, solderable per MIL-STD-750,
Method 2026
Polarity:
Color band denotes cathode end
Mounting Position:
Any
Weight:0.005
ounce, 0.138 grams
0.060(1.52)
0.030(0.76)
0.008(0.203)MAX.
0.220(5.59)
0.205(5.21)
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 C ambient temperature unless otherwise specified.
Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%.
SYMBOLS
UF1A UF1B UF1D
UF1G UF1J
UF1K UF1M
UNITS
VOLTS
VOLTS
VOLTS
Amp
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
at T
L
=55 C
Peak forward surge current
8.3ms single half sine-wave superimposed on
rated load (JEDEC Method)
Maximum instantaneous forward voltage at 1.0A
Maximum DC reverse current
T
A
=25 C
at rated DC blocking voltage
T
A
=100 C
Maximum reverse recovery time
(NOTE 1)
Typical junction capacitance (NOTE 2)
Typical thermal resistance (NOTE 3)
Operating junction and storage temperature range
V
RRM
V
RMS
V
DC
I
(AV)
50
35
50
100
70
100
200
140
200
400
280
400
1.0
600
420
600
800
560
800
1000
700
1000
I
FSM
V
F
I
R
t
rr
C
J
50
1.0
30.0
1.4
5.0
50.0
75
15.0
50.0
-65 to +150
1.7
Amps
Volts
u
A
ns
pF
C/W
C
R
q
JA
T
J
,
T
STG
Note:1.Reverse
recovery condition I
F
=0.5A,I
R
=1.0A,Irr=0.25A
2.Measured at 1MHz and applied reverse voltage of 4.0V D.C.
3.P.C.B. mounted with 0.2x0.2”(5.0x5.0mm) copper pad areas
www.shunyegroup.com.cn

UF1G Related Products

UF1G UF1A UF1B UF1D UF1J UF1K UF1M
Description 1 A, 400 V, SILICON, SIGNAL DIODE, DO-214AA 1 A, 50 V, SILICON, SIGNAL DIODE, DO-204AL 1 A, 100 V, SILICON, SIGNAL DIODE, DO-214AA 1 A, 200 V, SILICON, SIGNAL DIODE, DO-214AA 1 A, SILICON, SIGNAL DIODE, DO-214AA 1 A, SILICON, SIGNAL DIODE, DO-214AA 1 A, SILICON, SIGNAL DIODE, DO-214AA
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