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10A8

Description
10 A, 800 V, SILICON, RECTIFIER DIODE
Categorysemiconductor    Discrete semiconductor   
File Size85KB,2 Pages
ManufacturerSHUNYE
Websitehttp://www.shunyegroup.com.cn/
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10A8 Overview

10 A, 800 V, SILICON, RECTIFIER DIODE

10A05
- - -
10A10
PLASTIC SILICON RECTIFIER
FEATURES
Low cost
Diffused junction
Low leakage
Low forward voltage drop
High current capability
Easily cleaned witn Freon,Alcohol,lsopropanol
and similar solvents
The plastic material carries U/L recognition 94V-0
VOLTAGE RANGE: 50 --- 1000 V
CURRENT:
10.0
A
R-6
MECHANICAL DATA
Case:JEDEC R-6,molded plastic
Terminals: Axial lead ,solderable per
MIL- STD-202,Method 208
Polarity: Color band denotes cathode
Weight: 0.072 ounces,2.04 grams
Mounting position: Any
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
ambient temperature unless otherwise specified.
Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%.
10A05
Maximum recurrent peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forw ard rectified current
9.5mm lead length,
@T
A
=75
10A1
100
70
100
10A2
200
140
200
10A4
400
280
400
10.0
10A6
600
420
600
10A8
800
560
800
10A10
1000
700
1000
UNITS
V
RRM
V
RMS
V
DC
I
F(AV)
50
35
50
V
V
V
A
Peak forw ard surge current
8.3ms single half-sine-w ave
superimposed on rated load
@T
J
=125
I
FSM
400.0
A
Maximum instantaneous forw ard voltage
@
10.0
A
Maximum reverse current
at rated DC blocking voltage
Typical junction capacitance
Typical thermal resistance
@T
A
=25
@T
A
=100
(Note1)
(Note2)
V
F
I
R
C
J
R
θ
JA
T
J
T
STG
1.0
10.0
100.0
120
10
- 55 ---- + 150
- 55 ---- + 150
V
µA
pF
/W
Operating junction temperature range
Storage temperature range
2. Thermal resistance f rom junction to ambient.
NOTE: 1. Measured at 1.0MHz and applied rev erse v oltage of 4.0V DC.
www.shunyegroup.com.cn

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10A8 10A05 10A1 10A10 10A2 10A4 10A6
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