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BAT86

Description
0.2 A, SILICON, SIGNAL DIODE, DO-35
Categorysemiconductor    Discrete semiconductor   
File Size529KB,1 Pages
ManufacturerSHUNYE
Websitehttp://www.shunyegroup.com.cn/
Download Datasheet View All

BAT86 Overview

0.2 A, SILICON, SIGNAL DIODE, DO-35

Reverse Voltage - 50 Volts
DO-35(GLASS)
SMALL SIGNAL SCHOTTKY DIODES
P
tot
- 200 mW
FEATURES
Fast switching for high efficiency
Low reverse leakage
High forward surge current capability
High temperature soldering guaranteed
250 C/10 seconds,0.375
(9.5mm) lead length,
5 lbs. (2.3kg) tension
BAT86
1.0 2(26.0)
MIN.
0.079(2.0)
MAX
0.165 (4.2)
MAX
MECHANICAL DATA
1.0 2(26.0)
MIN.
0.018(0.45)
TYP
Dimensions in inches and (millimeters)
Case:
DO-35 glass case
Terminals:
Plated axial leads, solderable per MIL-STD-750,
Method 2026
Polarity:
Color band denotes cathode end
Mounting Position:
Any
Weight:0.005
ounce, 0.14 grams
ABSOLUTE RATINGS
Continuous reverse voltage
Forward continuous current at
T
A
=25 C
Repetitive peak forward current at tp<1s,
δ<0.5,
T
A
=25 C
Power dissipation at T
A
=65 C
P
tot
Junction temperature
T
J
T
A
Ambient operating temperature range
T
STG
Storage temperature range
*Valid provided that that leads at a distance of 4mm from case are kept at ambient temperature
SYMBOLS
V
RRM
I
F
I
FSM
Value
50
200*
300*
200*
125
-65 to +125
-65 to +125
UNITS
V
mA
mA
mW
C
C
C
ELECTRICAL CHARACTERISTICS
Reverse breakdown voltage tested with 100µA pulses
50
Forward voltage
Pulse test tp<300µs,
δ<2%
0.200
at I
F
=0.1mA
at I
F
=1mA
0.272
V
F
at I
F
=10mA
0.365
at I
F
=30mA
0.460
at I
F
=100mA
0.700
Leakage current V
R
=25V
I
R
0.2
Junction capacitance at V
R
=1V, f=1MHz
C
J
Reverse recovery time I
F
=10mA,I
R
=10mA,I
rr
=1mA
t
rr
Thermal resistance junction to ambient
R
θJA
*Valid provided that leads at a distance of 4mm from case are kept at ambient temperature
SYMBOLS
V
(BR)R
Min.
Typ.
Max.
UNITS
V
0.300
0.380
0.450
0.600
0.900
0.5
8
5
300*
V
µ
A
pF
ns
K/mW
www.shunyegroup.com.cn

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