BAV100---BAV103
SMALL SIGNAL SWITCHING DIODE
Reverse Voltage -
50 to 200 Volts
Forward Current -
250 mApere
FEATURES
◇
Silicon epitaxial planar diode
◇
High speed switching diode
◇
500 mW power dissipation
MINI-MELF
Cathode indification
φ
.5±0.1
1
MECHANICAL DATA
◇
Case:
MINI-MELF,glass
case
◇
Polarity: Color band denotes cathode
◇
Weight:
Approx 0.031 grams
3.4
+0.3
-0.1
0.4±0.1
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25℃,ambient temperature unless otherwise specified.
ABSOLUTE MAXIMUM RATINGS AND THERMAL RESISTANCE
BAV100
Reverse voltage
Repetitive peak reverse voltage
Forward current
Forward surge current t
p
=1s
Power dissipation
Thermal resistance junction to ambient
Thermal resistance junction to lead
Junction temperature
Storage temperature range
1)
BAV101
100
120
0.25
1.0
500
500
1)
350
175
BAV102
150
200
BAV103
200
250
Unit
V
V
A
A
mW
K/W
K/W
℃
℃
V
R
V
RRM
I
(AV)
I
FSM
P
V
R
θJA
R
θJL
T
j
T
STG
50
60
- 65 --- + 175
Device mounted on PC
board
50mm×50mm×1.6mm
.
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RATINGS AND CHARACTERISTIC CURVES
FIG 1. REVERSE CURRENT VS. JUNCTION TEMPERATURE
BAV100 - - - BAV103
FIG 2. FORWARD CURRENT VS. FORWARD VOLTAGE
REVERSE CURRENT (
µ
A )
1000
1000
Forward Current ( mA )
100
Scattering Limit
10
T
j
= 25°C
100
Scattering Limit
10
1
V
R
= V
RRM
0.1
0.01
0
40
80
120
1
0.1
160
200
0
0.4
0.8
1.2
1.6
2.0
JUNCTION TEMPERTURE (
)
Forward Voltage ( V )
FIG 3. DIFFERENTIAL FORWARD RESISTANCE
VS. FORWARD CURRENT
DIFFERENTIAL FORWARD RESISTANCE,
W
1000
100
T
j
= 25°C
10
1
0.1
1
10
100
FORWARD CURRENT ( mA )
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