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BAV100

Description
0.2 A, SILICON, SIGNAL DIODE
Categorysemiconductor    Discrete semiconductor   
File Size182KB,3 Pages
ManufacturerSHUNYE
Websitehttp://www.shunyegroup.com.cn/
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BAV100 Overview

0.2 A, SILICON, SIGNAL DIODE

BAV100---BAV103
SMALL SIGNAL SWITCHING DIODE
Reverse Voltage -
50 to 200 Volts
Forward Current -
250 mApere
FEATURES
Silicon epitaxial planar diode
High speed switching diode
500 mW power dissipation
MINI-MELF
Cathode indification
φ
.5±0.1
1
MECHANICAL DATA
Case:
MINI-MELF,glass
case
Polarity: Color band denotes cathode
Weight:
Approx 0.031 grams
3.4
+0.3
-0.1
0.4±0.1
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25℃,ambient temperature unless otherwise specified.
ABSOLUTE MAXIMUM RATINGS AND THERMAL RESISTANCE
BAV100
Reverse voltage
Repetitive peak reverse voltage
Forward current
Forward surge current t
p
=1s
Power dissipation
Thermal resistance junction to ambient
Thermal resistance junction to lead
Junction temperature
Storage temperature range
1)
BAV101
100
120
0.25
1.0
500
500
1)
350
175
BAV102
150
200
BAV103
200
250
Unit
V
V
A
A
mW
K/W
K/W
V
R
V
RRM
I
(AV)
I
FSM
P
V
R
θJA
R
θJL
T
j
T
STG
50
60
- 65 --- + 175
Device mounted on PC
board
50mm×50mm×1.6mm
.
www.shunyegroup.com.cn

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BAV100 BAV101 BAV102 BAV103
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