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BY298

Description
2 A, 400 V, SILICON, RECTIFIER DIODE, DO-15
Categorysemiconductor    Discrete semiconductor   
File Size229KB,2 Pages
ManufacturerSHUNYE
Websitehttp://www.shunyegroup.com.cn/
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BY298 Overview

2 A, 400 V, SILICON, RECTIFIER DIODE, DO-15

BY296 THRU BY299
FAST RECOVERY RECTIFIERS
Reverse Voltage -
100 to 800 Volts
DO-15
Forward Current -
2.0 Amperes
FEATURES
1.0 (25.4)
MIN.
0.140(3.6)
0.104(2.6)
DIA.
0.300(7.6)
0.230(5.8)
The plastic package carries Underwriters Laboratory
Flammability Classification 94V-0
Fast switching for high efficiency
Low reverse leakage
High forward surge current capability
High temperature soldering guaranteed:
250 C/10 seconds,0.375
(9.5mm) lead length,
5 lbs. (2.3kg) tension
MECHANICAL DATA
1.0 (25.4)
MIN.
0.034(0.9)
0.028(0.7)
DIA.
Dimensions in inches and (millimeters)
Case:
JEDEC DO-15 molded plastic body
Terminals:
Plated axial leads, solderable per MIL-STD-750,
Method 2026
Polarity:
Color band denotes cathode end
Mounting Position:
Any
Weight:0.014
ounce, 0.40 grams
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 C ambient temperature unless otherwise specified.
Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%.
SYMBOLS
BY296
BY297
BY298
BY299
UNITS
VOLTS
VOLTS
VOLTS
Amps
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
0.375”(9.5mm) lead length at T
A
=75 C
Peak forward surge current
8.3ms single half sine-wave superimposed on
rated load (JEDEC Method)
Maximum instantaneous forward voltage at 2.0A
Maximum DC reverse current
T
A
=25 C
at rated DC blocking voltage
T
A
=100 C
Maximum reverse recovery time
(NOTE 1)
Typical junction capacitance (NOTE 2)
Typical thermal resistance (NOTE 3)
Operating junction and storage temperature range
V
RRM
V
RMS
V
DC
I
(AV)
100
70
100
200
140
200
2.0
400
280
400
800
560
800
I
FSM
V
F
I
R
t
rr
C
J
R
q
JA
T
J
,
T
STG
70.0
1.3
5.0
100.0
500
40.0
40.0
-65 to +150
Amps
Volts
u
A
ns
pF
C/W
C
Note:1.Reverse
recovery condition I
F
=0.5A,I
R
=1.0A,Irr=0.25A
2.Measured at 1MHz and applied reverse voltage of 4.0V D.C.
3.Thermal resistance from junction to ambient at 0.375”(9.5mm)lead length,P.C.B. mounted
www.shunyegroup.com.cn

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BY298 BY296 BY297 BY299
Description 2 A, 400 V, SILICON, RECTIFIER DIODE, DO-15 2 A, SILICON, RECTIFIER DIODE 2 A, 200 V, SILICON, RECTIFIER DIODE, DO-15 2 A, SILICON, RECTIFIER DIODE
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Index Files: 882  2102  1707  1145  2590  18  43  35  24  53 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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