Product Specification
www.jmnic.com
Silicon NPN Power Transistors
2SD1894
DESCRIPTION
・With
TO-3PFa package
・Optimum
for 60W HiFi output
・High
foward current transfer ratio
・Low
collector saturation voltage
・Complement
to type 2SB1254
APPLICATIONS
・Power
amplification
PINNING
PIN
1
2
3
Base
Collector
Emitter
DESCRIPTION
・
Absolute maximum ratings(Ta=25
℃)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
C
T
j
T
stg
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current-peak
T
C
=25℃
Collector power dissipation
3
Junction temperature
Storage temperature
150
-55~150
℃
℃
CONDITIONS
Open emitter
Open base
Open collector
VALUE
160
140
5
7
12
70
W
UNIT
V
V
V
A
A
JMnic
Product Specification
www.jmnic.com
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
V
CEO
V
CEsat
V
BEsat
I
CBO
I
CEO
I
EBO
h
FE-1
h
FE -2
f
T
PARAMETER
Collector-emitter voltage
Collector-emitter saturation voltage
Emitter-base saturation voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
DC current gain
Transition frequency
CONDITIONS
I
C
=30mA ; I
B
=0
I
C
=6A ;I
B
=6mA
I
C
=6A ;I
B
=6mA
V
CB
=160V; I
E
=0
V
CE
=140V; I
B
=0
V
EB
=5V; I
C
=0
I
C
=1A ; V
CE
=5V
I
C
=6A ; V
CE
=5V
I
C
=0.5A ; V
CE
=10V;f=1MHz
2000
5000
20
MIN
140
TYP.
2SD1894
MAX
UNIT
V
2.5
3.0
100
100
100
V
V
μA
μA
μA
30000
MHz
Switching times
t
on
t
s
t
f
Turn-on time
Storage time
Fall time
I
C
=6A; V
CC
=50V
I
B1
=-I
B2
=6mA
2.5
5.0
2.5
μs
μs
μs
JMnic
Product Specification
www.jmnic.com
Silicon NPN Power Transistors
PACKAGE OUTLINE
2SD1894
Fig.2 Outline dimensions (unindicated tolerance:±0.30mm)
JMnic
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