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BUK856-400IZ

Description
Insulated Gate Bipolar Transistor Protected Logic-Level IGBT
CategoryDiscrete semiconductor    The transistor   
File Size61KB,8 Pages
ManufacturerPhilips Semiconductors (NXP Semiconductors N.V.)
Websitehttps://www.nxp.com/
Download Datasheet Parametric View All

BUK856-400IZ Overview

Insulated Gate Bipolar Transistor Protected Logic-Level IGBT

BUK856-400IZ Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerPhilips Semiconductors (NXP Semiconductors N.V.)
package instruction,
Reach Compliance Codeunknow
Maximum collector current (IC)20 A
Collector-emitter maximum voltage500 V
Maximum landing time (tf)10000 ns
Gate emitter threshold voltage maximum12 V
JESD-609 codee0
Maximum operating temperature150 °C
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)100 W
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Philips Semiconductors
Product specification
Insulated Gate Bipolar Transistor
Protected Logic-Level IGBT
GENERAL DESCRIPTION
Protected N-channel logic-level
insulated gate bipolar power
transistor in a plastic envelope,
intended for automotive ignition
applications. The device has
built-in zener diodes providing
active collector voltage clamping
and ESD protection up to 2 kV.
BUK856-400 IZ
QUICK REFERENCE DATA
SYMBOL PARAMETER
V
(CL)CER
V
CEsat
I
C
P
tot
E
CERS
Collector-emitter clamp voltage
Collector-emitter on-state voltage
Collector current (DC)
Total power dissipation
Clamped energy dissipation
MIN. TYP. MAX. UNIT
370
410
500
2.2
20
100
300
V
V
A
W
mJ
PINNING - TO220AB
PIN
1
2
3
tab
gate
collector
emitter
collector
DESCRIPTION
PIN CONFIGURATION
tab
SYMBOL
c
g
1 23
e
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL
V
CE
V
CE
±V
GE
I
C
I
C
I
CM
I
CLM
E
CERS
E
CERR1
E
ECR1
P
tot
T
stg
T
j
PARAMETER
Collecter-emitter voltage
Collector-emitter voltage
Gate-emitter voltage
Collector current (DC)
Collector current (DC)
Collector current (pulsed peak value,
on-state)
Collector current (clamped inductive
load)
Clamped turn-off energy
(non-repetitive)
Clamped turn-off energy (repetitive)
Reverse avalanche energy
(repetitive)
Total power dissipation
Storage temperature
Operating Junction Temperature
CONDITIONS
t
p
500
µs
Continuous
-
T
mb
= 100 ˚C
T
mb
= 25 ˚C
T
mb
= 25 ˚C; t
p
10 ms;
V
CE
15 V
1 kΩ
R
G
10 kΩ
T
mb
= 25 ˚C; I
C
= 10 A; R
G
= 1 kΩ;
see Figs. 23,24
T
mb
= 100 ˚C; I
C
= 8 A; R
G
= 1 kΩ;
f = 50 Hz
I
E
= 1 A; f = 50 Hz
T
mb
= 25 ˚C
-
-
MIN.
-
-20
-
-
-
-
-
-
-
-
-
-55
-40
MAX.
500
50
12
10
20
25
10
300
125
5
125
150
150
UNIT
V
V
V
A
A
A
A
mJ
mJ
mJ
W
˚C
˚C
ESD LIMITING VALUE
SYMBOL
V
C
PARAMETER
Electrostatic discharge capacitor
voltage
CONDITIONS
Human body model
(100 pF, 1.5 kΩ)
MIN.
-
MAX.
2
UNIT
kV
1
This applies to short-term operation in ignition circuits with open-secondary ignition coil.
November 1998
1
Rev. 1.400
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