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BUK9508-55A

Description
TrenchMOS logic level FET
CategoryDiscrete semiconductor    The transistor   
File Size116KB,14 Pages
ManufacturerPhilips Semiconductors (NXP Semiconductors N.V.)
Websitehttps://www.nxp.com/
Environmental Compliance
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BUK9508-55A Overview

TrenchMOS logic level FET

BUK9508-55A Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerPhilips Semiconductors (NXP Semiconductors N.V.)
package instruction,
Reach Compliance Codeunknow
ConfigurationSingle
Maximum drain current (Abs) (ID)75 A
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-609 codee3
Operating modeENHANCEMENT MODE
Maximum operating temperature175 °C
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)200 W
surface mountNO
Terminal surfaceMatte Tin (Sn)
BUK95/9608-55A
TrenchMOS™ logic level FET
Rev. 03 — 6 May 2002
Product data
1. Description
N-channel enhancement mode field-effect power transistor in a plastic package using
TrenchMOS™ technology, featuring very low on-state resistance.
Product availability:
BUK9508-55A in SOT78 (TO-220AB)
BUK9608-55A in SOT404 (D
2
-PAK).
2. Features
s
s
s
s
TrenchMOS™ technology
Q101 compliant
175
°C
rated
Logic level compatible.
3. Applications
s
Automotive and general purpose power switching:
x
12 V and 24 V loads
x
Motors, lamps and solenoids.
4. Pinning information
Table 1:
Pin
1
2
3
mb
Pinning - SOT78 and SOT404, simplified outline and symbol
Description
gate (g)
mb
Simplified outline
mb
Symbol
d
drain (d)
source (s)
mounting base;
connected to drain (d)
[1]
g
s
MBB076
2
1
MBK106
3
MBK116
1 2 3
SOT78 (TO-220AB)
[1]
It is not possible to make connection to pin 2 of the SOT404 package.
SOT404 (D
2
-PAK)
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