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SD1898

Description
RF & MICROWAVE TRANSISTORS 1.6 GHz SATCOM APPLICATIONS
CategoryDiscrete semiconductor    The transistor   
File Size42KB,4 Pages
ManufacturerSTMicroelectronics
Websitehttp://www.st.com/
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SD1898 Overview

RF & MICROWAVE TRANSISTORS 1.6 GHz SATCOM APPLICATIONS

SD1898 Parametric

Parameter NameAttribute value
MakerSTMicroelectronics
package instructionFLANGE MOUNT, S-PDFM-F2
Contacts2
Reach Compliance Codeunknow
ECCN codeEAR99
Other featuresHIGH RELIABILITY
Shell connectionBASE
Maximum collector current (IC)7.8 A
Collector-emitter maximum voltage15 V
ConfigurationSINGLE
Minimum DC current gain (hFE)15
highest frequency bandL BAND
JESD-30 codeS-PDFM-F2
Number of components1
Number of terminals2
Maximum operating temperature200 °C
Package body materialPLASTIC/EPOXY
Package shapeSQUARE
Package formFLANGE MOUNT
Polarity/channel typeNPN
Maximum power dissipation(Abs)87.5 W
Certification statusNot Qualified
surface mountYES
Terminal formFLAT
Terminal locationDUAL
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
SD1898
RF & MICROWAVE TRANSISTORS
1.6 GHz SATCOM APPLICATIONS
.
.
.
.
.
.
1.65 GHz
28 VOLTS
EFFICIENCY 40% MIN.
CLASS C OPERATION
COMMON BASE
P
OUT
=
32 W MIN. WITH 9 dB GAIN
.400 SQ. 2LFL (M186)
epoxy sealed
ORDER CODE
SD1898
BRANDING
1898
PIN CONNECTION
DESCRIPTION
The SD1898 is a 28 V Class C silicon NPN tran-
sistor designed for INMARSAT and other 1.65 GHz
SATCOM applications. A gold metallized emitter-
ballasted die geometry is employed providing high
gain and efficiency while ensuring long term re-
liability and ruggedness under severe operating
conditions. SD1898 is packaged in a cost-effective
epoxy sealed housing.
ABSOLUTE MAXIMUM RATINGS
(T
case
=
25
°
C)
Symbol
Parameter
Value
Unit
1. Collector
2. Base
3. Emitter
4. Base
V
CBO
V
CEO
V
EBO
I
C
P
DISS
T
J
T
STG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Device Current
Power Dissipation
Junction Temperature
Storage Temperature
45
15
3.5
7.8
87.5
+200
65 to +150
V
V
V
A
W
°
C
°
C
THERMAL DATA
R
TH(j-c)
November 1992
Junction-Case Thermal Resistance
2.0
°C/W
1/4

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SD1898 1898
Description RF & MICROWAVE TRANSISTORS 1.6 GHz SATCOM APPLICATIONS RF & MICROWAVE TRANSISTORS 1.6 GHz SATCOM APPLICATIONS

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