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BUK9518-55A

Description
TrenchMOS logic level FET
CategoryDiscrete semiconductor    The transistor   
File Size133KB,14 Pages
ManufacturerPhilips Semiconductors (NXP Semiconductors N.V.)
Websitehttps://www.nxp.com/
Environmental Compliance
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BUK9518-55A Overview

TrenchMOS logic level FET

BUK9518-55A Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerPhilips Semiconductors (NXP Semiconductors N.V.)
package instruction,
Reach Compliance Codeunknow
ConfigurationSingle
Maximum drain current (Abs) (ID)61 A
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-609 codee3
Operating modeENHANCEMENT MODE
Maximum operating temperature175 °C
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)136 W
surface mountNO
Terminal surfaceMatte Tin (Sn)
BUK9518-55A; BUK9618-55A
TrenchMOS™ logic level FET
Rev. 01 — 27 August 2001
Product data
1. Description
N-channel enhancement mode field-effect power transistor in a plastic package using
TrenchMOS™ technology, featuring very low on-state resistance.
Product availability:
BUK9518-55A in SOT78 (TO-220AB)
BUK9618-55A in SOT404 (D
2
-PAK).
2. Features
s
s
s
s
TrenchMOS™ technology
Q101 compliant
175
°C
rated
Logic level compatible.
3. Applications
s
Automotive and general purpose power switching:
x
12 V and 24 V loads
x
Motors, lamps and solenoids.
4. Pinning information
Table 1:
Pin
1
2
3
mb
Pinning - SOT78 and SOT404, simplified outline and symbol
Simplified outline
mb
mb
Description
gate (g)
drain (d)
source (s)
mounting base;
connected to drain (d)
Symbol
d
2
1
3
MBK116
g
s
MBB076
MBK106
1 2 3
SOT78 (TO-220AB)
SOT404 (D
2
-PAK)
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