MMIC power amplifier has a saturated pulsed output
power of 41 dBm and a large signal gain of 21 dB.
The power amplifier can be biased using a direct
gate voltage or using an on chip gate bias circuit.
This device is well suited for communication and
radar applications.
V
G
1
21
20
Bias
16
18
17
15
14
13
V
B
1 V
B
2 V
G
2
V
D
1
V
D
2
Pad Configuration
Pad No.
1
2
Function
V
G
1
Bias Circuit GND
No Connection
V
B
1
V
B
2
Bias Circuit GND
V
G
2
V
D
1
V
D
2
GND
RF
OUT
Pad No.
12
13
14
15
16
17
18
19
20
21
22
Function
GND
V
D
2
V
D
1
V
G
2
Bias Circuit GND
V
B
2
V
B
1
GND
Bias Circuit GND
V
G
1
RF
IN
Ordering Information
Part Number
MAAP-015030-DIE
MAAP-015030-DIEEV1
MAAP-015030-DIEEV2
Package
Die in Vacuum release gel
pack
Direct gate bias sample
board
On chip gate bias sample
board
3
4
5
6
7
8
9
10
11
* Restrictions on Hazardous Substances, European Union Directive 2011/65/EU.
1
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit
www.macom.com
for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
MAAP-015030
Power Amplifier, 13 W
8.5 - 11.75 GHz
Electrical Specifications:
Freq. = 8.5 - 11.5 GHz, T
A
= +25°C, Duty Cycle = 5%, P
IN
= 20 dBm, V
G
= -0.9 V
Parameter
Gain (Large Signal) (8.5 - 11.5 GHz)
Gain (Large Signal) (11.5 - 11.75 GHz)
Gain
Gain Flatness
Input Return Loss
Output Return Loss
Saturated Output Power (8.5 - 11.5 GHz)
Saturated Output Power (11.5 - 11.75 GHz)
Power Added Efficiency
8.5 - 9.0 GHz
9.0 - 10.0 GHz
10.0 - 11.75 GHz
Drain Bias Voltage
Drain Current
Units
dB
dB
dB
dB
dB
dBm
Min.
20
19
—
—
—
—
40
39
Typ.
21
25
1
12
10
41
Max.
—
—
—
—
—
—
Rev. V4
%
—
35
40
40
8.0
5
—
V
A
—
—
—
5.5
Absolute Maximum Ratings
1,2
Parameter
Input Power
Drain Voltage
Gate Voltage
Bias Voltage
Drain Current
Gate Current
Operating Temperature
Junction Temperature
3,4
Absolute Maximum
+23 dBm
+8.5 V
-2.0 V < V
G
< -0.7 V
-6.5 V < V
B
< -4.5 V
< 6.0 A
< 30 mA
-40°C
to +85°C
+175°C
Handling Procedures
Please observe the following precautions to avoid
damage:
Static Sensitivity
Gallium Arsenide Integrated Circuits are sensitive
to electrostatic discharge (ESD) and can be
damaged by static electricity. Proper ESD control
techniques should be used when handling these
devices.
1. Exceeding any one or combination of these limits may cause
permanent damage to this device.
2. MACOM does not recommend sustained operation near
these survivability limits.
3. Operating at nominal conditions with T
J
≤ +175°C will ensure
MTTF > 1 x 10
6
hours.
4. Junction Temperature (T
J
) = T
A
+
Өjc
* (V * I)
Typical thermal resistance (Өjc)
= 5.7°C/W.
a) For T
A
= 25°C,
T
J
= 175°C @ 8 V, 3.29 A
b) For T
A
= 85°C,
T
J
= 175°C @ 8 V, 1.97 A
2
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit
www.macom.com
for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
MAAP-015030
Power Amplifier, 13 W
8.5 - 11.75 GHz
Bonding Diagram - On Chip Bias
5
Rev. V4
Bonding Diagram - Direct Gate Bias
5
5.
Components C1 - C8 are all 100 pF chips.
MMIC Bare Die
3
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit
www.macom.com
for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
MAAP-015030
Power Amplifier, 13 W
8.5 - 11.75 GHz
Typical Performance Curves over Voltage
Gain vs. Frequency
30
Rev. V4
Reverse Isolation vs. Frequency
-20
-30
VG = 0.8 V
VG = 0.9 V
VG = 1.0 V
25
-40
20
-50
-60
-70
-80
15
VG = 0.8 V
VG = 0.9 V
VG = 1.0 V
10
8
9
10
11
12
8
9
10
11
12
Frequency (GHz)
Frequency (GHz)
Input Return Loss vs. Frequency
0
Output Return Loss vs. Frequency
0
-5
VG = 0.8 V
VG = 0.9 V
VG = 1.0 V
-5
VG = 0.8 V
VG = 0.9 V
VG = 1.0 V
-10
-10
-15
-15
-20
-20
8
9
10
11
12
8
9
10
11
12
Frequency (GHz)
Frequency (GHz)
4
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit
www.macom.com
for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
MAAP-015030
Power Amplifier, 13 W
8.5 - 11.75 GHz
Typical Performance Curves over Voltage
Gain vs. Frequency
30
Rev. V4
Output Power vs. Frequency
50
25
45
20
40
15
VG = 0.8 V
VG = 0.9 V
VG = 1.0 V
35
VG = 0.8 V
VG = 0.9 V
VG = 1.0 V
10
8
9
10
11
12
30
8
9
10
11
12
Frequency (GHz)
Frequency (GHz)
Drain Current vs. Frequency
6
PAE vs. Frequency
60
5
48
4
36
3
VG = 0.8 V
VG = 0.9 V
VG = 1.0 V
24
VG = 0.8 V
VG = 0.9 V
VG = 1.0 V
2
12
1
8
9
10
11
12
0
8
9
10
11
12
Frequency (GHz)
Frequency (GHz)
5
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit
www.macom.com
for additional data sheets and product information.
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