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SD1480

Description
RF & MICROWAVE TRANSISTORS VHF APPLICATIONS
CategoryDiscrete semiconductor    The transistor   
File Size70KB,6 Pages
ManufacturerSTMicroelectronics
Websitehttp://www.st.com/
Environmental Compliance
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RF & MICROWAVE TRANSISTORS VHF APPLICATIONS

SD1480 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
package instruction0.500 INCH, PLASTIC, M111, FM-6
Contacts6
Reach Compliance Codeunknow
ECCN codeEAR99
Other featuresDIFFUSED EMITTER BALLAST RESISTORS
Maximum collector current (IC)20 A
Collector-based maximum capacity250 pF
Collector-emitter maximum voltage36 V
ConfigurationSINGLE
Minimum DC current gain (hFE)20
highest frequency bandVERY HIGH FREQUENCY BAND
JESD-30 codeO-PXFM-F6
JESD-609 codee4
Number of components1
Number of terminals6
Maximum operating temperature175 °C
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)260
Polarity/channel typeNPN
Maximum power dissipation(Abs)270 W
Certification statusNot Qualified
surface mountYES
Terminal surfaceGold (Au)
Terminal formFLAT
Terminal locationUNSPECIFIED
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Base Number Matches1
SD1480
RF & MICROWAVE TRANSISTORS
VHF APPLICATIONS
.
.
.
.
.
.
.
136 - 175 MHz
28 VOLTS
EFFICIENCY 55%
COMMON EMITTER
GOLD METALLIZATION
INTERNAL INPUT MATCHING
P
OUT
=
125 W MIN. WITH 9.2 dB GAIN
.500 6LFL (M111)
epoxy sealed
ORDER CODE
SD1480
BRANDING
SD1480
PIN CONNECTION
DESCRIPTION
The SD1480 is a common emitter 28 V Class C
epitaxial silicon NPN planar transistor designed
primarily for VHF communications applications.
This internally matched device incorporates dif-
fused emitter ballasting resistors nad provides high
gain and stable operation across the entire 136
- 175 MHz VHF communications band.
ABSOLUTE MAXIMUM RATINGS
(T
case
=
25
°
C)
Symbol
Parameter
Value
Unit
1. Collector
2. Base
3. Emitter
4. Emitter
V
CBO
V
CEO
V
CES
V
EBO
I
C
P
DISS
T
J
T
STG
Collector-Base Voltage
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Device Current
Power Dissipation
Junction Temperature
Storage Temperature
65
36
65
4.0
20
270
+200
65 to +150
V
V
V
V
A
W
°
C
°
C
°C/W
1/6
THERMAL DATA
R
TH(j-c)
Junction-Case Thermal Resistance
June 20, 1994
0.65
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