DATA SHEET
SEMICONDUCTOR
BAS19W/20W/21W
SOT-323 Plastic-Encapsulate DIODE
SWITCHING DIODE
FEATURES
Power dissipation
P
D
:
Collector current
I
F
:
V
R
:
200 mA
19W: 120 V; 20W: 150V ; 21W: 200V
Collector-base voltage
Operating and storage junction temperature range
T
J
, T
stg
: -55℃ to +150℃
200 mW (Tamb=25℃)
H
SOT323
Unit:inch(mm)
Symbol
A
A1
A2
b
c
D
E
E1
e
e1
L
L1
θ
•
High temperature soldering : 260
O
C / 10 seconds at terminals
Pb free product at available : 99% Sn above meet RoHS
•
environment substance directive request
Dimensions In Millimeters
Min
Max
0.900
1.100
0.000
0.100
0.900
1.000
0.200
0.400
0.080
0.150
2.000
2.200
1.150
1.350
2.150
2.450
0.650 TYP
1.200
1.400
0.525 REF
0.260
0.460
0°
8°
Dimensions In Inches
Min
Max
0.035
0.043
0.000
0.004
0.035
0.039
0.008
0.016
0.003
0.006
0.079
0.087
0.045
0.053
0.085
0.096
0.026 TYP
0.047
0.055
0.021 REF
0.010
0.018
0°
8°
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
BAS19W
Reverse breakdown voltage
BAS20W
BAS21W
BAS19W
Reverse voltage leakage current
BAS20W
BAS21W
Forward voltage
V
F
I
R
100V
V
R
=150V
200V
I
F
=100mA
I
F
=200mA
Diode capacitance
Reveres recovery time
C
D
t
rr
V
R
=0V, f=1MHz
I
F
=I
R
=30mA
I
rr
=0.1
×
I
R
1000
1250
5
50
pF
nS
mV
Symbol
V
(BR) R
Test conditions
I
R
= 100µA
MIN
100
150
200
0.1
µA
MAX
UNIT
V
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1
REV.02 20120305
DEVICE CHARACTERISTICS
BAS19W/20W/21W
1000
100
T
J
=25
O
C
100
I
R
, LEAKAGE CURRENT, uA
FORWARD CURRENT, mA
10
10
1.0
1.0
0.1
0.1
0.01
0
1.0
2.0
0.01
0
100
O
200
FORWARD VOLTAGE, VOLTS
T
J
, JUNCTION TEMPERATURE, C
Fig.2 LEAKAGE CURRENT vs JUNCTION TEMPERATURE
FIG. 1-TYPICAL FORWARD CHARACTERISTIC
5.0
P
D
,
POWER DISSIPATION (mW)
400
DIODE CAPACITANCE, pF
300
200
100
0
2
4
6
8
0
50
100
150
O
200
REVERSE VOLTAGE, VOLTS
AMBIENT TEMPERATURE( C)
FIG. 4 POWER DERATING CURVE
FIG. 3 TYPICAL JUNCTION CAPACITANCE
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2
REV.02 20120305
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