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1SS187_14

Description
TOSHIBA Diode Silicon Epitaxial Planar Type
File Size188KB,3 Pages
ManufacturerToshiba Semiconductor
Websitehttp://toshiba-semicon-storage.com/
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1SS187_14 Overview

TOSHIBA Diode Silicon Epitaxial Planar Type

1SS187
TOSHIBA Diode Silicon Epitaxial Planar Type
1SS187
Ultra High Speed Switching Application
Small package
Low forward voltage
: SC-59
Unit: mm
: V
F (3)
=
0.92V (typ.)
Fast reverse recovery time : t
rr
=
1.6ns (typ.)
Small total capacitance
: C
T
=
2.2pF (typ.)
Absolute Maximum Ratings
(Ta = 25°C)
Characteristic
Maximum (peak) reverse voltage
Reverse voltage
Maximum (peak) forward current
Average forward current
Surge current (10ms)
Power dissipation
Junction temperature
Storage temperature range
Symbol
V
RM
V
R
I
FM
I
O
I
FSM
P
T
j
T
stg
Rating
85
80
300
100
2
150
125
−55
to 125
Unit
V
V
mA
mA
A
mW
°C
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating
conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
JEDEC
-
JEITA
SC-59
1-3G1D
TOSHIBA
Weight: 0.012g (typ.)
Electrical Characteristics
Characteristic
Symbol
V
F (1)
Forward voltage
V
F (2)
V
F (3)
Reverse current
Total capacitance
Reverse recovery tme
I
R (1)
I
R (2)
C
T
t
rr
Test
Circuit
I
F
=1mA
I
F
= 10mA
I
F
= 100mA
V
R
= 30V
V
R
= 80V
V
R
= 0, f = 1MHz
I
F
= 10mA (Fig.1)
Test Condition
Min
Typ
0.61
0.74
0.92
2.2
1.6
Max
1.20
0.1
0.5
4.0
4.0
μA
pF
ns
V
Unit
Marking
Start of commercial production
1982-06
1
2014-03-01
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