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1SS309_14

Description
TOSHIBA Diode Silicon Epitaxial Planar Type
File Size197KB,3 Pages
ManufacturerToshiba Semiconductor
Websitehttp://toshiba-semicon-storage.com/
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1SS309_14 Overview

TOSHIBA Diode Silicon Epitaxial Planar Type

1SS309
TOSHIBA Diode
Silicon Epitaxial Planar Type
1SS309
Ultra High Speed Switching Applications
Small package
Low forward voltage
Small total capacitance
: SC-74A
: V
F (3)
=
0.90V (typ.)
: C
T
=
0.9pF (typ.)
Unit: mm
Fast reverse recovery time : t
rr
=
1.6ns (typ.)
Absolute Maximum Ratings
(Ta = 25°C)
Characteristic
Maximum (peak) reverse voltage
Reverse voltage
Maximum (peak) forward current
Average forward current
Surge current (10ms)
Power dissipation
Junction temperature
Storage temperature
Symbol
V
RM
V
R
I
FM
I
O
I
FSM
P
T
j
T
stg
Rating
85
80
300 (*)
100 (*)
2 (*)
200
125
−55
to 125
Unit
V
V
mA
mA
A
mW
°C
°C
JEDEC
Note: Using continuously under heavy loads (e.g. the application of high
JEITA
SC−74A
temperature/current/voltage and the significant change in
1−3H1B
TOSHIBA
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e. operating Weight: 0.014g (typ.)
temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
(*)
Unit rating. Total rating = unit rating × 1.5
Electrical Characteristics
(Ta = 25°C)
Characteristic
Symbol
V
F (1)
Forward voltage
V
F (2)
V
F (3)
Reverse current
Total capacitance
Reverse recovery time
I
R (1)
I
R (2)
C
T
t
rr
Test
Circuit
Test Condition
I
F
= 1mA
I
F
= 10mA
I
F
= 100mA
V
R
= 30V
V
R
= 80V
V
R
= 0, f = 1MHz
I
F
= 10mA, Fig.1
Min
Typ.
0.60
0.72
0.90
Max
Unit
1.20
0.1
0.5
3.0
4.0
V
0.9
1.6
μA
pF
ns
Marking
Start of commercial production
1987-07
1
2014-03-01

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