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SD103BW-T3

Description
0.35 A, 20 V, SILICON, SIGNAL DIODE
CategoryDiscrete semiconductor    diode   
File Size37KB,3 Pages
ManufacturerWon-Top Electronics Co., Ltd.
Websitehttps://www.wontop.com/
Download Datasheet Parametric Compare View All

SD103BW-T3 Overview

0.35 A, 20 V, SILICON, SIGNAL DIODE

SD103BW-T3 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
Reach Compliance Codeunknow
ECCN codeEAR99
ConfigurationSINGLE
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)0.37 V
JESD-609 codee0
Maximum non-repetitive peak forward current2 A
Number of components1
Maximum operating temperature150 °C
Maximum output current0.35 A
Maximum repetitive peak reverse voltage30 V
surface mountYES
technologySCHOTTKY
Terminal surfaceTin/Lead (Sn/Pb)
Base Number Matches1
WTE
POWER SEMICONDUCTORS
SD103AW – SD103CW
SURFACE MOUNT SCHOTTKY BARRIER DIODE
Features
!
!
!
Low Turn-on Voltage
A
SOD-123
Dim
A
Min
3.6
2.5
1.4
0.5
0.4
0.95
Max
3.9
2.8
1.8
0.7
0.2
1.35
0.12
Fast Switching
PN Junction Guard Ring for Transient and
ESD Protection
!
Designed for Surface Mount Application
C
!
Plastic Material – UL Recognition Flammability
Classification 94V-O

E
D
B
B
C
D
E
G
H
J
Mechanical Data
!
!
!
!
!
Case: SOD-123, Molded Plastic
Terminals: Plated Leads Solderable per
MIL-STD-202, Method 208
Polarity: Cathode Band
Weight: 0.01 grams (approx.)
Marking: SD103AW S6
SD103BW S7
SD103CW S8
@T
A
=25°C unless otherwise specified
H
G
J
All Dimensions in mm
Maximum Ratings
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Forward Continuous Current (Note 1)
Non-Repetitive Peak Forward Surge Current
Power Dissipation
Typical Thermal Resistance, Junction to Ambient Air (Note 1)
Operating and Storage Temperature Range
@ t < 1.0s
Symbol
V
RRM
V
RWM
V
R
I
F
I
FSM
P
d
R
JA
T
j
, T
STG
SD103AW
SD103BW
SD103CW
Unit
40
30
350
2.0
400
300
-65 to +125
20
V
mA
A
mW
°C/W
°C
Electrical Characteristics
Characteristic
Forward Voltage Drop
Peak Reverse Leakage Current
Typical Junction Capacitance
Typical Reverse Recovery Time
@T
A
=25°C unless otherwise specified
Symbol
V
FM
I
RM
C
j
t
rr
All Types
0.37
0.60
5.0
50
10
Unit
V
µA
pF
nS
Test Condition
@ I
F
= 20mA
@ I
F
= 200mA
@ Rated DC Blocking Voltage
V
R
= 0V, f = 1.0MHz
I
F
= I
R
= 50mA to 200mA
I
RR
= 0.1 x I
R
, R
L
= 100
Note: 1. Valid provided that terminals are kept at ambient temperature.
SD103AW – SD103CW
1 of 3
© 2002 Won-Top Electronics

SD103BW-T3 Related Products

SD103BW-T3 SD103AW-T3 SD103CW-T3
Description 0.35 A, 20 V, SILICON, SIGNAL DIODE 0.35 A, 20 V, SILICON, SIGNAL DIODE 0.35 A, 20 V, SILICON, SIGNAL DIODE
Is it Rohs certified? incompatible incompatible incompatible
Reach Compliance Code unknow unknow unknow
ECCN code EAR99 EAR99 EAR99
Configuration SINGLE SINGLE SINGLE
Diode type RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE
Maximum forward voltage (VF) 0.37 V 0.37 V 0.37 V
JESD-609 code e0 e0 e0
Maximum non-repetitive peak forward current 2 A 2 A 2 A
Number of components 1 1 1
Maximum operating temperature 150 °C 150 °C 150 °C
Maximum output current 0.35 A 0.35 A 0.35 A
Maximum repetitive peak reverse voltage 30 V 40 V 20 V
surface mount YES YES YES
technology SCHOTTKY SCHOTTKY SCHOTTKY
Terminal surface Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
Base Number Matches 1 1 -

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