ES5ABF THRU ES5JBF
SURFACE MOUNT SUPERFAST RECOVERY RECTIFIER
Reverse Voltage - 50 to 600 Volts
Forward Current - 5.0 Amperes
SMBF
Cathode Band
Top View
FEATURES
For surface mounted applications
Low profile package
Glass Passivated Chip Junction
Superfast reverse recovery time
Lead free in comply with EU RoHS 2011/65/EU diretives
0.146(3.70)
0.138(3.50)
0.086(2.20)
0.075(1.90)
0.173(4.4)
0.165(4.2)
0.051(1.30)
0.043(1.10)
0.010(0.26)
0.0071(0.18)
0.051(1.30)
0.039(1.0)
MECHANICAL DATA
Case:
JEDEC SMBF molded plastic body
Terminals:
leads solderable per MIL-STD-750,
Method 2026
Mounting Position:
Any
Weight:57mg/0.002oz
0.216(5.5)
0.200(5.1)
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 C ambient temperature unless otherwise specified.
Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%.
MDD Catalog Number
Marking code
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
at T
L
=100 C
Peak forward surge current
8.3ms single half sine-wave superimposed on
rated load (JEDEC Method)
Maximum instantaneous forward voltage at 5.0A
Maximum DC reverse current
T
A
=25 C
at rated DC blocking voltage
T
A
=125 C
Maximum reverse recovery time
(NOTE 1)
Typical junction capacitance (NOTE 2)
SYMBOLS
ES5ABF
E5AB
ES5BBF
E5BB
ES5DBF
E5DB
ES5GBF
E5GB
ES5JBF
E5JB
UNITS
VOLTS
VOLTS
VOLTS
Amps
V
RRM
V
RMS
V
DC
I
(AV)
50
35
50
100
70
100
200
140
200
5.0
400
280
400
600
420
600
I
FSM
V
F
I
R
t
rr
150
1.0
10.0
100.0
35
95
45
-55 to +150
1.25
135
1.7
Amps
Volts
µ
A
ns
pF
C/W
C
C
J
Typical thermal resistance (NOTE 3)
R
θ
JA
Operating junction and storage temperature range T
J
,
T
STG
Note:1.Reverse
recovery condition I
F
=0.5A,I
R
=1.0A,Irr=0.25A
2.Measured at 1MHz and applied reverse voltage of 4.0V D.C.
3.P.C.B. mounted with 0.5x0.5”(12.7x12.7mm) copper pad areas
RATINGS AND CHARACTERISTIC CURVES ES5ABF THRU ES5JBF
Fig.1 Reverse Recovery Time Characteristic And Test Circuit Diagram
50 ohm
Noninductive
10 ohm
Noninductive
+0.5
D.U.T
25Vdc
approx
PULSE
GENERATOR
Note 2
0
-0.25
1 ohm
NonInductive
t
rr
+
-
OSCILLOSCOPE
Note 1
-1.0
Note：1. Rise Time = 7ns, max.
Input Impedance = 1megohm,22pF.
2. Ries Time =10ns, max.
Source Impedance = 50 ohms.
Fig.2 Maximum Average Forward Current Rating
10ns/div
Set time Base for 10ns/div
Fig.3 Typical Reverse Characteristics
300
Average Forward Current (A)
6
I
R
- Reverse Current (
μ
A)
5
4
3
2
1
0
25
50
75
100
125
150
175
Single phase half wave resistive
or inductive P.C.B mounted on
0.5×0.5"(12.7
×12.7mm
) pad areas.
100
T
J
=125
°C
10
T
J
=75
°C
1.0
T
J
=25
°C
0.1
0
20
40
60
80
100
Lead Temperature (°C)
Fig.4 Typical Forward Characteristics
% of PIV.VOLTS
Fig.5 Typical Junction Capacitance
150
Instaneous Forward Current (A)
10
Junction Capacitance ( pF)
T
J
=25
°C
125
100
75
50
25
T
J
=25
°C
f = 1.0MHz
V
sig
= 50mV
p-p
0.1
1
10
100
1.0
ES5ABF~ES5DBF
0.1
ES5EBF/ ES5GBF
ES5JBF
0.01
0.001
0
0.5
1.0
1.5
2.0
2.5
Instaneous Forward Voltage (V)
Reverse Voltage (V)
Fig.6 Maximum Non-Repetitive Peak
Forward Surage Current
Peak Forward Surage Current (A)
175
ES5ABF~ES5DBF
150
ES5EBF/ ES5JBF
125
100
75
50
25
00
1
10
100
8.3 ms Single Half Sine Wave
(JEDEC Method)
Number of Cycles
The cruve graph is for reference only, can't be the basis for judgment(曲线图仅供参考)!
Microcontroller MCU
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