ES2AW THRU ES2JW
SURFACE MOUNT SUPER FAST RECTIFIER
Reverse Voltage - 50 to 600 Volts
Forward Current - 2.0 Ampere
SOD-123FL
Cathode Band
Top View
FEATURES
Glass passivated device
Ideal for surface mouted applications
Low reverse leakage
Metallurgically bonded construction
High temperature soldering guaranteed:
250 C/10 seconds,0.375
”
(9.5mm) lead length,
5 lbs. (2.3kg) tension
2.8
±
0.1
1.1± 0.15
0.10-0.30
0.6
±
0.25
１．０±
0.2
1.8± 0.1
MECHANICAL DATA
Case:
JEDEC SOD-123FL molded plastic body over passivated chip
Terminals:
Plated axial leads, solderable per MIL-STD-750,
Method 2026
Polarity:
Color band denotes cathode end
Mounting Position:
Any
Weight:0.0007
ounce, 0.02 grams
3.7
±
0.2
Dimensions in millimeters
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 C ambient temperature unless otherwise specified.
Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%.
SYMBOLS
ES2AW
ES2BW
ES2CW
ES2DW
ES2EW
ES2GW
ES2JW
MDD Catalog Number
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
at Ta=65°C
Peak forward surge current
8.3ms single half sine-wave superimposed on
rated load (JEDEC Method)
Maximum instantaneous forward voltage at2.0A
Maximum DC reverse current
T
A
=25 C
at rated DC blocking voltage
T
A
=100 C
Maximum reverse recovery time (NOTE 1)
Typical junction capacitance (NOTE 2)
Typical thermal resistance (NOTE 3)
Operating junction and storage temperature range
V
RRM
V
RMS
V
DC
I
(AV)
UNITS
VOLTS
VOLTS
VOLTS
Amp
2E1
2E2
2E3
2E4
2E5
2E6
2E8
50
35
50
100
70
100
150
105
150
200
140
200
2.0
300
210
300
400
280
400
600
420
600
I
FSM
V
F
I
R
trr
C
J
R
θ
JA
T
J
,
T
STG
0.95
50.0
1.25
5.0
100.0
35
25
90
-55 to +150
1.7
Amps
Volts
µ
A
ns
pF
°C/W
C
Note:
1.Measured with IF=0.5A, IR=1A, Irr=0.25A.
2.Measured at 1MHz and applied reverse voltage of 4.0V D.C.
3.PCB mounted on 0.2*0.2" (5.0*5.0mm) coppeer pad area.
RATINGS AND CHARACTERISTIC CURVES ES2AW THRU ES2JW
Fig.1 Reverse Recovery Time Characteristic And Test Circuit Diagram
50 ohm
Noninductive
10 ohm
Noninductive
+0.5
D.U.T
25Vdc
approx
PULSE
GENERATOR
Note 2
0
-0.25
1 ohm
NonInductive
t
rr
+
-
OSCILLOSCOPE
Note 1
-1.0
Note：1. Rise Time = 7ns, max.
Input Impedance = 1megohm,22pF.
2. Ries Time =10ns, max.
Source Impedance = 50 ohms.
Fig.2 Maximum Average Forward Current Rating
10ns/div
Set time Base for 10ns/div
Fig.3 Typical Reverse Characteristics
300
Average Forward Current (A)
2.4
I
R
- Reverse Current (
μ
A)
2.0
1.6
1.2
0.8
0.4
0.0
25
50
75
100
125
150
175
Single phase half wave resistive
or inductive P.C.B mounted on
0.5×0.5"(12.7
×12.7mm
) pad areas.
100
T
J
=125
°C
10
T
J
=75
°C
1.0
T
J
=25
°C
0.1
0
20
40
60
80
100
Lead Temperature (°C)
Fig.4 Typical Forward Characteristics
% of PIV.VOLTS
Fig.5 Typical Junction Capacitance
Instaneous Forward Current (A)
10
1.0
ES2AW~ES2DW
Junction Capacitance ( pF)
T
J
=25
°C
30
0.1
ES2EW/WS2GW
ES2JW
20
0.01
10
T
J
=25
°C
f = 1.0MHz
V
sig
= 50mV
p-p
0.001
0
0.5
1.0
1.5
2.0
2.5
0.1
1
10
100
Instaneous Forward Voltage (V)
Reverse Voltage (V)
Fig.6 Maximum Non-Repetitive Peak
Forward Surage Current
Peak Forward Surage Current (A)
60
50
40
30
20
10
00
1
10
100
8.3 ms Single Half Sine Wave
(JEDEC Method)
Number of Cycles
The cruve graph is for reference only, can't be the basis for judgment(曲线图仅供参考)!
51mcu
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