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BUL44D2

Description
POWER TRANSISTORS 2 AMPERES 700 VOLTS 50 WATTS
CategoryDiscrete semiconductor    The transistor   
File Size269KB,12 Pages
ManufacturerMotorola ( NXP )
Websitehttps://www.nxp.com
Download Datasheet Parametric Compare View All

BUL44D2 Overview

POWER TRANSISTORS 2 AMPERES 700 VOLTS 50 WATTS

BUL44D2 Parametric

Parameter NameAttribute value
MakerMotorola ( NXP )
package instructionFLANGE MOUNT, R-PSFM-T3
Reach Compliance Codeunknow
Other featuresBUILT-IN ANTISATURATION NETWORK
Shell connectionCOLLECTOR
Maximum collector current (IC)2 A
Collector-based maximum capacity75 pF
Collector-emitter maximum voltage400 V
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum DC current gain (hFE)10
JEDEC-95 codeTO-220AB
JESD-30 codeR-PSFM-T3
JESD-609 codee0
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Polarity/channel typeNPN
Maximum power consumption environment50 W
Maximum power dissipation(Abs)75 W
Certification statusNot Qualified
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)13 MHz
Maximum off time (toff)1250 ns
Maximum opening time (tons)150 ns
VCEsat-Max0.5 V
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Low Base Drive Requirement
High Peak DC Current Gain (55 Typical) @ IC = 100 mA
Extremely Low Storage Time Min/Max Guarantees Due to the
H2BIP Structure which Minimizes the Spread
Integrated Collector–Emitter Free Wheeling Diode
Fully Characterized and Guaranteed Dynamic VCE(sat)
“6 Sigma” Process Providing Tight and Reproductible Parameter Spreads
Designer’s and SWITCHMODE are trademarks of Motorola, Inc.
©
Motorola, Inc. 1995
Motorola Bipolar Power Transistor Device Data
(1) Pulse Test: Pulse Width = 5 ms, Duty Cycle
10%.
Designer’s Data for “Worst Case” Conditions
— The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.
Antisaturation Network
Diode and Built-in Efficient
Integrated Collector-Emitter
NPN Power Transistor with
High Speed, High Gain Bipolar
Designer's
SEMICONDUCTOR TECHNICAL DATA
MOTOROLA
The BUL44D2 is state–of–art High Speed High gain BIPolar transistor (H2BIP).
High dynamic characteristics and lot to lot minimum spread (±150 ns on storage time)
make it ideally suitable for light ballast applications. Therefore, there is no need to
guarantee an hFE window.
Main features:
THERMAL CHARACTERISTICS
MAXIMUM RATINGS
Maximum Lead Temperature for Soldering Purposes:
1/8″ from case for 5 seconds
Thermal Resistance
— Junction to Case
— Junction to Ambient
Operating and Storage Temperature
*Total Device Dissipation @ TC = 25
_
C
*Derate above 25°C
Base Current — Continuous
Base Current
— Peak (1)
Collector Current — Continuous
— Peak (1)
Emitter–Base Voltage
Collector–Emitter Breakdown Voltage
Collector–Base Breakdown Voltage
Collector–Emitter Sustaining Voltage
It’s characteristics make it also suitable for PFC application.
Data Sheet
Rating
Symbol
TJ, Tstg
VCBO
VCEO
VEBO
VCES
R
θJC
R
θJA
IC
ICM
IB
IBM
PD
TL
– 65 to 150
Value
2.5
62.5
260
700
700
400
50
0.4
POWER TRANSISTORS
2 AMPERES
700 VOLTS
50 WATTS
12
1
2
2
5
BUL44D2
CASE 221A–06
TO–220AB
Order this document
by BUL44D2/D
Watt
W/
_
C
_
C/W
Unit
Adc
Adc
Vdc
Vdc
Vdc
Vdc
_
C
_
C
1

BUL44D2 Related Products

BUL44D2
Description POWER TRANSISTORS 2 AMPERES 700 VOLTS 50 WATTS
Maker Motorola ( NXP )
package instruction FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code unknow
Other features BUILT-IN ANTISATURATION NETWORK
Shell connection COLLECTOR
Maximum collector current (IC) 2 A
Collector-based maximum capacity 75 pF
Collector-emitter maximum voltage 400 V
Configuration SINGLE WITH BUILT-IN DIODE
Minimum DC current gain (hFE) 10
JEDEC-95 code TO-220AB
JESD-30 code R-PSFM-T3
JESD-609 code e0
Number of components 1
Number of terminals 3
Maximum operating temperature 150 °C
Package body material PLASTIC/EPOXY
Package shape RECTANGULAR
Package form FLANGE MOUNT
Polarity/channel type NPN
Maximum power consumption environment 50 W
Maximum power dissipation(Abs) 75 W
Certification status Not Qualified
surface mount NO
Terminal surface Tin/Lead (Sn/Pb)
Terminal form THROUGH-HOLE
Terminal location SINGLE
transistor applications SWITCHING
Transistor component materials SILICON
Nominal transition frequency (fT) 13 MHz
Maximum off time (toff) 1250 ns
Maximum opening time (tons) 150 ns
VCEsat-Max 0.5 V
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