BUL45D2G
High Speed, High Gain
Bipolar NPN Power
Transistor
with Integrated Collector−Emitter Diode
and Built−in Efficient Antisaturation
Network
The BUL45D2G is state−of−art High Speed High gain BiPolar
transistor (H2BIP). High dynamic characteristics and lot−to−lot
minimum spread (±150 ns on storage time) make it ideally suitable for
light ballast applications. Therefore, there is no need to guarantee an h
FE
window. It’s characteristics make it also suitable for PFC application.
Features
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POWER TRANSISTOR
5.0 AMPERES,
700 VOLTS, 75 WATTS
COLLECTOR
2, 4
•
Low Base Drive Requirement
•
High Peak DC Current Gain
•
Extremely Low Storage Time Min/Max Guarantees Due to
•
•
•
•
the H2BIP Structure which Minimizes the Spread
Integrated Collector−Emitter Free Wheeling Diode
Fully Characterized and Guaranteed Dynamic V
CE(sat)
“6 Sigma” Process Providing Tight and Reproductible
Parameter Spreads
These Devices are Pb−Free and are RoHS Compliant*
1
BASE
3
EMITTER
4
MAXIMUM RATINGS
Rating
Collector−Emitter Sustaining Voltage
Collector−Base Breakdown Voltage
Collector−Emitter Breakdown Voltage
Emitter−Base Voltage
Collector Current − Continuous
Collector Current − Peak (Note 1)
Base Current − Continuous
Base Current − Peak (Note 1)
Total Device Dissipation
@ T
C
= 25_C
Derate above 25°C
Operating and Storage Temperature
Symbol
V
CEO
V
CBO
V
CES
V
EBO
I
C
I
CM
I
B
I
BM
P
D
75
0.6
T
J
, T
stg
−65 to +150
W
W/_C
_C
A
Y
WW
G
Value
400
700
700
12
5
10
2
4
Unit
Vdc
Vdc
Vdc
Vdc
Adc
Adc
Adc
Adc
1
2
3
TO−220
CASE 221A
STYLE 1
MARKING DIAGRAM
BUL45D2G
AY WW
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Pulse Test: Pulse Width = 5 ms, Duty Cycle
≤
10%.
= Assembly Location
= Year
= Work Week
= Pb−Free Package
ORDERING INFORMATION
Device
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
©
Semiconductor Components Industries, LLC, 2014
Package
TO−220
(Pb−Free)
Shipping
50 Units / Rail
BUL45D2G
1
November, 2014 − Rev. 8
Publication Order Number:
BUL45D2/D
BUL45D2G
THERMAL CHARACTERISTICS
Characteristics
Thermal Resistance, Junction−to−Case
Thermal Resistance, Junction−to−Ambient
Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 5 Seconds
Symbol
R
qJC
R
qJA
T
L
Max
1.65
62.5
260
Unit
_C/W
_C/W
_C
ELECTRICAL CHARACTERISTICS
(T
C
= 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage
(I
C
= 100 mA, L = 25 mH)
Collector−Base Breakdown Voltage
(I
CBO
= 1 mA)
Emitter−Base Breakdown Voltage
(I
EBO
= 1 mA)
Collector Cutoff Current
(V
CE
= Rated V
CEO
, I
B
= 0)
Collector Cutoff Current
(V
CE
= Rated V
CES
, V
EB
= 0)
@ T
C
= 25°C
@ T
C
= 125°C
(V
CE
= 500 V, V
EB
= 0)
@ T
C
= 125°C
Emitter−Cutoff Current
(V
EB
= 10 Vdc, I
C
= 0)
ON CHARACTERISTICS
Base−Emitter Saturation Voltage
(I
C
= 0.8 Adc, I
B
= 80 mAdc)
@ T
C
= 25°C
@ T
C
= 125°C
(I
C
= 2 Adc, I
B
= 0.4 Adc)
@ T
C
= 25°C
@ T
C
= 125°C
Collector−Emitter Saturation Voltage
(I
C
= 0.8 Adc, I
B
= 80 mAdc)
@ T
C
= 25°C
@ T
C
= 125°C
(I
C
= 2 Adc, I
B
= 0.4 Adc)
@ T
C
= 25°C
@ T
C
= 125°C
(I
C
= 0.8 Adc, I
B
= 40 mAdc)
@ T
C
= 25°C
@ T
C
= 125°C
DC Current Gain
(I
C
= 0.8 Adc, V
CE
= 1 Vdc)
@ T
C
= 25°C
@ T
C
= 125°C
(I
C
= 2 Adc, V
CE
= 1 Vdc)
@ T
C
= 25°C
@ T
C
= 125°C
DIODE CHARACTERISTICS
Forward Diode Voltage
(I
EC
= 1 Adc)
@ T
C
= 25°C
@ T
C
= 125°C
(I
EC
= 2 Adc)
@ T
C
= 25°C
@ T
C
= 125°C
(I
EC
= 0.4 Adc)
@ T
C
= 25°C
@ T
C
= 125°C
V
EC
−
−
−
−
−
−
1.04
0.7
1.2
−
0.85
0.62
1.5
−
1.6
−
1.2
−
V
V
BE(sat)
−
−
−
−
V
CE(sat)
−
−
−
−
−
−
h
FE
22
20
10
7
34
29
14
9.5
−
−
−
−
0.28
0.32
0.32
0.38
0.46
0.62
0.4
0.5
0.5
0.6
0.75
1
−
0.8
0.7
0.89
0.79
1
0.9
1
0.9
Vdc
Vdc
V
CEO(sus)
400
V
CBO
700
V
EBO
12
I
CEO
−
I
CES
−
−
−
I
EBO
−
−
100
−
−
−
100
500
100
mAdc
−
100
mAdc
14.1
−
mAdc
910
−
Vdc
450
−
Vdc
Vdc
Symbol
Min
Typ
Max
Unit
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2
BUL45D2G
ELECTRICAL CHARACTERISTICS
(continued) (T
C
= 25°C unless otherwise noted)
Characteristic
DIODE CHARACTERISTICS
Forward Recovery Time (see Figure 27)
(I
F
= 1 Adc, di/dt = 10 A/ms)
@ T
C
= 25°C
(I
F
= 2 Adc, di/dt = 10 A/ms)
@ T
C
= 25°C
(I
F
= 0.4 Adc, di/dt = 10 A/ms)
@ T
C
= 25°C
DYNAMIC CHARACTERISTICS
Current Gain Bandwidth
(I
C
= 0.5 Adc, V
CE
= 10 Vdc, f = 1 MHz)
Output Capacitance
(V
CB
= 10 Vdc, I
E
= 0, f = 1 MHz)
Input Capacitance
(V
EB
= 8 Vdc)
DYNAMIC SATURATION VOLTAGE
Dynamic Saturation
Voltage:
Determined 1
ms
and
3
ms
respectively after
rising I
B1
reaches
90% of final I
B1
I
C
= 1 A
I
B1
= 100 mA
V
CC
= 300 V
@ 1
ms
@ 3
ms
@ 1
ms
@ 3
ms
@ T
C
= 25°C
@ T
C
= 125°C
@ T
C
= 25°C
@ T
C
= 125°C
@ T
C
= 25°C
@ T
C
= 125°C
@ T
C
= 25°C
@ T
C
= 125°C
V
CE(dsat)
−
−
−
−
−
−
−
−
3.7
9.4
0.35
2.7
3.9
12
0.4
1.5
−
−
−
−
−
−
−
−
V
V
V
V
f
T
−
C
ob
−
C
ib
−
340
500
50
75
pF
13
−
pF
MHz
T
fr
−
−
−
330
360
320
−
−
−
ns
Symbol
Min
Typ
Max
Unit
I
C
= 2 A
I
B1
= 0.8 A
V
CC
= 300 V
SWITCHING CHARACTERISTICS: Resistive Load
(D.C.
≤
10%, Pulse Width = 20
ms)
Turn−on Time
Turn−off Time
Turn−on Time
Turn−off Time
I
C
= 2 Adc, I
B1
= 0.4 Adc
I
B2
= 1 Adc
V
CC
= 300 Vdc
@ T
C
= 25°C
@ T
C
= 125°C
@ T
C
= 25°C
@ T
C
= 125°C
@ T
C
= 25°C
@ T
C
= 125°C
@ T
C
= 25°C
@ T
C
= 125°C
t
on
t
off
t
on
t
off
−
−
−
−
−
−
2.1
−
90
105
1.15
1.5
90
110
−
3.1
150
−
1.3
−
150
−
2.4
−
ns
ms
ns
ms
I
C
= 2 Adc, I
B1
= 0.4 Adc
I
B2
= 0.4 Adc
V
CC
= 300 Vdc
SWITCHING CHARACTERISTICS: Inductive Load
(V
clamp
= 300 V, V
CC
= 15 V, L = 200
mH)
Fall Time
Storage Time
Crossover Time
Fall Time
Storage Time
Crossover Time
I
C
= 2 Adc
I
B1
= 0.4 Adc
I
B2
= 0.4 Adc
I
C
= 1 Adc
I
B1
= 100 mAdc
I
B2
= 500 mAdc
@ T
C
= 25°C
@ T
C
= 125°C
@ T
C
= 25°C
@ T
C
= 125°C
@ T
C
= 25°C
@ T
C
= 125°C
@ T
C
= 25°C
@ T
C
= 125°C
@ T
C
= 25°C
@ T
C
= 125°C
@ T
C
= 25°C
@ T
C
= 125°C
t
f
t
s
t
c
t
f
t
s
t
c
−
−
−
−
−
−
−
−
1.95
−
−
−
90
93
0.72
1.05
95
95
80
105
−
2.9
225
450
150
−
0.9
−
150
−
150
−
2.25
−
300
−
ns
ms
ns
ns
ms
ns
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
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3
BUL45D2G
TYPICAL STATIC CHARACTERISTICS
100
V
CE
= 1 V
80
hFE , DC CURRENT GAIN
T
J
= 125°C
hFE , DC CURRENT GAIN
T
J
= 25°C
80
100
V
CE
= 5 V
T
J
= 125°C
T
J
= 25°C
60
60
40
T
J
= - 20°C
40
T
J
= - 20°C
20
20
0
0.001
0.01
0.1
1
I
C
, COLLECTOR CURRENT (AMPS)
10
0
0.001
0.01
0.1
1
I
C
, COLLECTOR CURRENT (AMPS)
10
Figure 1. DC Current Gain @ 1 Volt
Figure 2. DC Current Gain @ 5 Volt
4
T
J
= 25°C
VCE , VOLTAGE (VOLTS)
VCE , VOLTAGE (VOLTS)
3
10
I
C
/I
B
= 5
T
J
= 25°C
2
5A
1
1A
I
C
= 500 mA
0
0.001
0.01
0.1
1
I
B
, BASE CURRENT (AMPS)
10
2A
3A
4A
1
T
J
= 125°C
T
J
= - 20°C
0.1
0.001
0.01
0.1
1
I
C
, COLLECTOR CURRENT (AMPS)
10
Figure 3. Collector Saturation Region
Figure 4. Collector−Emitter Saturation Voltage
10
I
C
/I
B
= 10
VCE , VOLTAGE (VOLTS)
VCE , VOLTAGE (VOLTS)
10
I
C
/I
B
= 20
1
1
T
J
= - 20°C
T
J
= 25°C
T
J
= 125°C
T
J
= - 20°C
T
J
= 125°C
T
J
= 25°C
0.1
0.001
1
0.01
0.1
I
C
, COLLECTOR CURRENT (AMPS)
10
0.1
0.001
0.01
0.1
1
I
C
, COLLECTOR CURRENT (AMPS)
10
Figure 5. Collector−Emitter Saturation Voltage
Figure 6. Collector−Emitter Saturation Voltage
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4
BUL45D2G
TYPICAL STATIC CHARACTERISTICS
10
I
C
/I
B
= 5
VBE , VOLTAGE (VOLTS)
VBE , VOLTAGE (VOLTS)
10
I
C
/I
B
= 10
T
J
= 25°C
1
T
J
= - 20°C
1
T
J
= - 20°C
T
J
= 125°C
T
J
= 25°C
T
J
= 125°C
0.1
0.001
1
0.01
0.1
I
C
, COLLECTOR CURRENT (AMPS)
10
0.1
0.001
0.01
0.1
1
I
C
, COLLECTOR CURRENT (AMPS)
10
Figure 7. Base−Emitter Saturation Region
Figure 8. Base−Emitter Saturation Region
10
FORWARD DIODE VOLTAGE (VOLTS)
I
C
/I
B
= 20
VBE , VOLTAGE (VOLTS)
10
1
T
J
= - 20°C
T
J
= 125°C
T
J
= 25°C
1
25°C
125°C
0.1
0.001
0.01
0.1
1
I
C
, COLLECTOR CURRENT (AMPS)
10
0.1
0.01
1
0.1
REVERSE EMITTER-COLLECTOR CURRENT (AMPS)
10
Figure 9. Base−Emitter Saturation Region
Figure 10. Forward Diode Voltage
1000
C
ib
(pF)
T
J
= 25°C
f
(test)
= 1 MHz
BVCER (VOLTS)
1000
900
800
700
600
BVCER(sus) @ 200 mA
500
BVCER @ 10 mA
T
J
= 25°C
100
C
ob
(pF)
10
1
1
10
V
R
, REVERSE VOLTAGE (VOLTS)
100
400
10
100
R
BE
(W)
1000
Figure 11. Capacitance
Figure 12. BVCER = f(ICER)
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Embedded System
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