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BUL45F

Description
POWER TRANSISTOR 5.0 AMPERES 700 VOLTS 35 and 75 WATTS
CategoryDiscrete semiconductor    The transistor   
File Size221KB,10 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
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BUL45F Overview

POWER TRANSISTOR 5.0 AMPERES 700 VOLTS 35 and 75 WATTS

BUL45F Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerON Semiconductor
Parts packaging codeSFM
package instructionPLASTIC, ISOLATED TO-220, 3 PIN
Contacts3
Reach Compliance Code_compli
ECCN codeEAR99
Other featuresUL RECOGNIZED
Shell connectionISOLATED
Maximum collector current (IC)5 A
Collector-emitter maximum voltage400 V
ConfigurationSINGLE
Minimum DC current gain (hFE)7
JEDEC-95 codeTO-220AB
JESD-30 codeR-PSFM-T3
JESD-609 codee0
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeNPN
Maximum power dissipation(Abs)35 W
Certification statusNot Qualified
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)12 MHz
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by BUL45/D
Designer's
NPN Silicon Power Transistor
High Voltage SWITCHMODE
Data Sheet
BUL45 *
BUL45F*
*Motorola Preferred Device
t
Series
Designed for use in electronic ballast (light ballast) and in Switchmode Power
supplies up to 50 Watts. Main features include:
Improved Efficiency Due to:
— Low Base Drive Requirements (High and Flat DC Current Gain hFE)
— Low Power Losses (On–State and Switching Operations)
— Fast Switching: tfi = 100 ns (typ) and tsi = 3.2
µs
(typ)
— Fast Switching:
@ IC = 2.0 A, IB1 = IB2 = 0.4 A
Full Characterization at 125°C
Tight Parametric Distributions Consistent Lot–to–Lot
BUL45F, Case 221D, is UL Recognized at 3500 VRMS: File #E69369
MAXIMUM RATINGS
Rating
Collector–Emitter Sustaining Voltage
Collector–Emitter Breakdown Voltage
Emitter–Base Voltage
Collector Current — Continuous
— Peak(1)
Base Current
RMS Isolated Voltage(2)
(for 1 sec, R.H. < 30%,
TC = 25°C)
Total Device Dissipation
Derate above 25°C
Operating and Storage Temperature
Test No. 1 Per Fig. 22a
Test No. 2 Per Fig. 22b
Test No. 3 Per Fig. 22c
(TC = 25°C)
Symbol
VCEO
VCES
VEBO
IC
ICM
IB
VISOL
75
0.6
BUL45
400
700
9.0
5.0
10
2.0
4500
3500
1500
35
0.28
BUL45F
Unit
Vdc
Vdc
Vdc
Adc
Adc
Volts
POWER TRANSISTOR
5.0 AMPERES
700 VOLTS
35 and 75 WATTS
BUL45
CASE 221A–06
TO–220AB
PD
TJ, Tstg
Watts
W/°C
°C
BUL45F
CASE 221D–02
ISOLATED TO–220 TYPE
UL RECOGNIZED
– 65 to 150
THERMAL CHARACTERISTICS
Rating
Thermal Resistance — Junction to Case
— Junction to Ambient
Symbol
R
θJC
R
θJA
MJE18006 MJF18006
1.65
62.5
3.55
62.5
Unit
°C/W
ELECTRICAL CHARACTERISTICS
(TC = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector–Emitter Sustaining Voltage (IC = 100 mA, L = 25 mH)
Collector Cutoff Current (VCE = Rated VCEO, IB = 0)
Collector Cutoff Current (VCE = Rated VCES, VEB = 0)
(TC = 125°C)
Emitter Cutoff Current (VEB = 9.0 Vdc, IC = 0)
(1) Pulse Test: Pulse Width = 5.0 ms, Duty Cycle
10%.
(2) Proper strike and creepage distance must be provided.
Designer’s and SWITCHMODE are trademarks of Motorola, Inc.
Designer’s Data for “Worst Case” Conditions
— The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.
Preferred
devices are Motorola recommended choices for future use and best overall value.
Symbol
Min
Typ
Max
Unit
VCEO(sus)
ICEO
ICES
IEBO
400
100
10
100
100
Vdc
µAdc
µAdc
µAdc
(continued)
REV 2
©
Motorola, Inc. 1995
Motorola Bipolar Power Transistor Device Data
1

BUL45F Related Products

BUL45F
Description POWER TRANSISTOR 5.0 AMPERES 700 VOLTS 35 and 75 WATTS
Is it Rohs certified? incompatible
Maker ON Semiconductor
Parts packaging code SFM
package instruction PLASTIC, ISOLATED TO-220, 3 PIN
Contacts 3
Reach Compliance Code _compli
ECCN code EAR99
Other features UL RECOGNIZED
Shell connection ISOLATED
Maximum collector current (IC) 5 A
Collector-emitter maximum voltage 400 V
Configuration SINGLE
Minimum DC current gain (hFE) 7
JEDEC-95 code TO-220AB
JESD-30 code R-PSFM-T3
JESD-609 code e0
Number of components 1
Number of terminals 3
Maximum operating temperature 150 °C
Package body material PLASTIC/EPOXY
Package shape RECTANGULAR
Package form FLANGE MOUNT
Peak Reflow Temperature (Celsius) NOT SPECIFIED
Polarity/channel type NPN
Maximum power dissipation(Abs) 35 W
Certification status Not Qualified
surface mount NO
Terminal surface Tin/Lead (Sn/Pb)
Terminal form THROUGH-HOLE
Terminal location SINGLE
Maximum time at peak reflow temperature NOT SPECIFIED
transistor applications SWITCHING
Transistor component materials SILICON
Nominal transition frequency (fT) 12 MHz
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