LAB
MECHANICAL DATA
Dimensions in mm
10.2
1.3
4.5
SEME
BUL74A
ADVANCED
DISTRIBUTED BASE DESIGN
HIGH VOLTAGE
HIGH SPEED NPN
SILICON POWER TRANSISTOR
Designed for use in
electronic ballast applications
6.3
3.6 Dia.
15.1
18.0
1 2 3
1.3
14.0
0.85
•
•
•
•
0.5
SEMEFAB DESIGNED AND DIFFUSED DIE
HIGH VOLTAGE
HIGH CURRENT
EFFICIENT POWER SWITCHING
FEATURES
• Multi–base for efficient energy distribution
across the chip resulting in significantly
improved switching and energy ratings
across full temperature range.
• Ion implant and high accuracy masking for
tight control of characteristics from batch to
batch.
• Triple Guard Rings for improved control of
high voltages.
2.54 2.54
TO-220
Pin 1 - Base
Pin 2 - Collector
Pin 3 - Emitter
ABSOLUTE MAXIMUM RATINGS
(T
case
= 25°C unless otherwise stated)
V
CBO
V
CEO
V
EBO
I
C
I
B
P
tot
T
j
T
stg
Semelab plc.
Collector – Base Voltage(I
E
=0)
Collector – Emitter Voltage (I
B
= 0)
Emitter – Base Voltage (I
C
= 0)
Continuous Collector Current
Base Current
Total Dissipation at T
case
= 25°C
Junction Temperature
Operating and Storage Temperature Range
Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.
1000V
500V
10V
11A
3A
100W
150°C
–55 to +150°C
Prelim. 2/97
LAB
ELECTRICAL CHARACTERISTICS
(Tcase = 25°C unless otherwise stated)
Parameter
V
CEO(sus)
V
(BR)CBO
V
(BR)EBO
I
CBO
I
CEO
I
EBO
SEME
BUL74A
Test Conditions
Min.
500
1000
10
Typ.
Max.
Unit
ELECTRICAL CHARACTERISTICS
Collector – Emitter Sustaining Voltage I
C
= 10mA
Collector – Base Breakdown Voltage
Emitter – Base Breakdown Voltage
Collector – Base Cut–Off Current
Collector – Emitter Cut–Off Current
Emitter Cut–Off Current
I
C
= 1mA
I
E
= 1mA
V
CB
= 1000V
T
C
= 125°C
V
CE
= 490V
V
EB
= 9V
T
C
= 125°C
I
C
= 0.1A
V
CE
= 1V
V
CE
= 1V
V
CE
= 5V
V
CE
= 5V
I
B
= 0.1A
I
B
= 0.4A
I
B
= 1A
I
B
= 0.3A
I
B
= 1A
V
CE
= 4V
f = 1MHz
V
10
100
100
10
100
µA
µA
µA
15
5
18
8
40
20
45
20
0.3
0.5
1.0
1.2
1.5
16
85
V
V
—
h
FE*
DC Current Gain
I
C
= 3A
I
C
= 0.5A
I
C
= 3A
I
C
= 1A
V
CE(sat)*
Collector – Emitter Saturation Voltage I
C
= 2A
I
C
= 5A
I
C
= 3A
I
C
= 5A
I
C
= 0.2A
V
CB
= 10V
V
BE(sat)*
Base – Emitter Saturation Voltage
DYNAMIC CHARACTERISTICS
Transition Frequency
Output Capacitance
f
t
C
ob
MHz
pF
* Pulse test t
p
= 300µs ,
δ
< 2%
Semelab plc.
Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.
Prelim. 2/97
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